Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (1.6V max.) High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number TN0104N3-G TN0104N3-G P002 Product Summary Package Option Packing TO-92 1000/Bag TO-92 2000/Reel TO-243AA (SOT-89) 2000/Reel TN0104N3-G P003 TN0104N3-G P005 BVDSX/BVDGX 40V RDS(ON) IDSS (max) (min) 1.8Ω 2.0A Pin Configuration TN0104N3-G P013 TN0104N3-G P014 TN0104N8-G -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-92 132OC/W TO-243AA (SOT-89) 133OC/W Doc.# DSFP-TN0104 C080813 SOURCE DRAIN GATE GATE TO-92 TO-243AA (SOT-89) Product Marking SiTN 0 1 0 4 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 TN1LW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Supertex inc. www.supertex.com TN0104 Thermal Characteristics (continuous)† (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM TO-92 450mA 2.40A 1.0W 450mA 2.40A TO-243AA (SOT-89) 630mA 2.90A 1.6W‡ 630mA 2.90A Package ID Notes: † ID (continuous) is limited by max rated Tj . ‡ TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (T A Sym Parameter BVDSS VGS(th) ΔVGS(th) IGSS IDSS ID(ON) RDS(ON) ΔRDS(ON) = 25OC unless otherwise specified) Min Typ Max Units Drain-to-source breakdown voltage 40 - - V VGS = 0V, ID = 1.0mA Gate threshold voltage 0.6 - 1.6 V VGS = VDS, ID= 500µA Change in VGS(th) with temperature - -3.8 -5.0 Gate body leakage - 0.1 100 - - 1.0 - - 100 - 0.35 - 0.5 1.1 - 2.0 2.6 - VGS = 10V, VDS = 20V - 5.0 - VGS = 3.0V, ID = 50mA - 2.3 2.5 TO-92 - 1.5 1.8 TO-243AA - - 2.0 - 0.7 1.0 340 450 - Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance Both packages Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - - 70 COSS Common source output capacitance - - 50 CRSS Reverse transfer capacitance - - 15 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 7.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 TO-92 - 1.2 1.8 TO-243AA - - 2.0 - 300 - tr td(OFF) tf VSD Diode forward voltage drop trr Reverse recovery time Conditions mV/ C VGS = VDS, ID= 1.0mA O nA µA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C VGS = 3.0V, VDS = 20V A Ω VGS = 5.0V, VDS = 20V VGS = 5.0V, ID = 250mA VGS = 10V, ID = 1.0A %/OC VGS = 10V, ID = 1.0A mmho VDS = 20V, ID = 500mA pF ns VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 1.0A, RGEN = 25Ω V ns VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Doc.# DSFP-TN0104 C080813 2 Supertex inc. www.supertex.com TN0104 Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN0104 C080813 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 3 Supertex inc. www.supertex.com TN0104 Typical Performance Curves Output Characteristics 3.75 Saturation Characteristics 3.75 3.00 3.00 2.25 ID (amperes) ID (amperes) VGS = 10V 8V 6V 1.50 4V 0.75 10 20 30 8V 1.50 6V 0.75 4V 2V 2V 0 0 VGS = 10V 2.25 0 0 40 2 4 VDS (volts) Transconductance vs. Drain Current GFS (siemens) 5 TA = -55OC 0.60 10 TA = 25OC 0.45 TA = 125OC 0.30 (TA = 25OC) 4 3 2 TO-243AA 0.15 TO-92 1 0 0 0.5 1.0 1.5 2.0 0 2.5 0 25 50 ID (amperes) 1.0 Thermal Resistance (normalized) TO-92 (DC) TO-243AA (DC) 0.1 0.01 0.1 (TA = 25OC) 1.0 10 125 150 Thermal Response Characteristics 0.8 TO-243AA PD = 1.6W TA = 25OC 0.6 0.4 0.2 0 0.001 100 VDS (volts) Doc.# DSFP-TN0104 C080813 100 TC ( C) Maximum Rated Safe Operating Area 0.0 75 O 10 ID (amperes) 8 Power Dissipation vs. Case Temperature VDS = 25V PD (watts) 0.75 6 VDS (volts) TO-92 PD = 1.0W TC = 25OC 0.01 0.1 1.0 10 tP (seconds) 4 Supertex inc. www.supertex.com TN0104 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.2 8 1.1 6 1.0 0.9 VGS = 10V 4 0 50 100 0 150 0 1 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature TA = -55OC VDS = 25V VGS(th) (normalized) 25OC 2.4 1.8 125OC 1.2 1.4 1.4 1.2 1.2 1.0 0.8 RDS(ON) @ 5.0V, 0.25A 0 2 4 6 8 0.4 -50 10 1.0 0.8 V(th) @ 0.5mA 0.6 0.6 0.6 0 50 VGS (volts) 100 0.4 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 f = 1MHz VDS = 10V 8 55pF VGS (volts) 75 C (picofarads) 2 Tj (OC) RDS(ON) (normalized) 3.0 ID (amperes) VGS = 5.0V 2 0.8 -50 0 On-Resistance vs. Drain Current 10 RDS(ON) (Ω) BVDSS (normalized) 1.3 CISS 50 25 40V 6 4 2 COSS 0 CRSS 0 10 20 30 0 0.50 40 0.80 0.95 1.10 1.25 QG (nanocoulombs) VDS (volts) Doc.# DSFP-TN0104 C080813 50pF 0.65 5 Supertex inc. www.supertex.com TN0104 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Doc.# DSFP-TN0104 C080813 6 Supertex inc. www.supertex.com TN0104 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN0104 C080813 7 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com