BTS 244 Z Speed TEMPFET N-Channel Enhancement mode Logic Level Input 1 Analog driving possible 5 Fast switching up to 1 MHz VPT05166 Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated Type BTS 244 Z VDS 55 V RDS(on) 13 m Package Ordering Code P-TO220-5-3 Q67060-S6000-A2 P-TO220-5-62 Q67060-S6003-A2 TO-220-5-43 Q67060-S6008 D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin Symbol Function 1 G Gate 2 A Anode Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source 1 2000-05-17 BTS 244 Z Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage, RGS = 20 k DGR Gate source voltage VGS Nominal load current (ISO 10483) ID(ISO) VGS = 4.5 V, VDS 0.5 V, TC = 85 °C VGS = 10 V, VDS Value 55 Unit V 55 20 A 19 0.5 V, TC = 85 °C 26 Continuous drain current 1) ID 35 Pulsed drain current ID puls 188 Avalanche energy, single pulse EAS 1.65 J Power dissipation Ptot 170 W -40 ...+175 °C TC = 100 °C, VGS = 4.5V ID = 19 A, RGS = 25 TC = 25 °C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C 2 2000-05-17 BTS 244 Z Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.88 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Symbol Parameter Values Unit min. typ. max. 55 - - ID = 130 µA 1.2 1.6 2 ID = 250 µA - 1.65 - at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS VGS(th) Zero gate voltage drain current µA IDSS VDS = 50 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current nA IGSS VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100 Drain-Source on-state resistance m RDS(on) VGS = 4.5 V, ID = 19 A - 16 18 VGS = 10 V, ID = 19 A - 11.5 13 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3 2000-05-17 BTS 244 Z Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 25 - - S Ciss - 2130 2660 pF Coss - 600 750 Crss - 320 400 td(on) - 15 25 tr - 70 105 td(off) - 40 60 tf - 25 40 Qg(th) - 2.5 3.8 Qg(5) - 50 75 Qg(total) - 85 130 V(plateau) - 4.5 - at Tj = 25°C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 35 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 47 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 47 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 47 A 4 2000-05-17 BTS 244 Z Electrical Characteristics Symbol Parameter Values Unit min. typ. max. IS 35 - - IFM 188 - - VSD - 1.25 1.8 V trr - 110 165 ns Qrr - 0.23 0.35 µC at Tj = 25°C, unless otherwise specified Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/µs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Forward voltage V VAK(on) IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 µs, Tj = -40...+150 °C Forward current IAK(on) mA Tj = -40...+150 °C Sensor override tP = 100 µs, Tj = -40...+150 °C 5 2000-05-17 BTS 244 Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. - - 4 µA 100 - - µs - - 150 Sensor Characteristics Temperature sensor leakage current IAK(off) Tj = 150 °C Min. reset pulse duration 1) treset Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) trecovery Tj = -40...+150 °C, IAK(on) = 0.3 mA Characteristics Holding current, VAK(off) = 5V mA IAK(hold) Tj = 25 °C 0.05 - 0.5 Tj = 150 °C 0.05 - 0.3 TTS(on) 150 160 170 °C toff 0.5 - 2.5 µs VAK(reset) 0.5 - - V Thermal trip temperature VTS = 5V Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150°C Sensor recovery behaviour: S ensor R E S E T V A K [V ] tre s e t 5 4 0 S ensor O N t re c o v e ry R eset OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again 6 2000-05-17 BTS 244 Z 1 Maximum allowable power dissipation 2 Drain current Ptot = f(TC) ID = f(TC ); VGS 4.5V 180 40 A 30 120 ID Ptot 140 25 100 20 80 15 60 10 40 5 20 0 -40 0 40 80 °C 120 0 0 180 20 40 60 80 100 120 140 °C TC TC 3 Typ. transient thermal impedance 4 Transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area ZthJC = f (tp ) Parameter: D=tp /T parameter : D = tp /T 10 180 2 10 1 K/W K/W 10 0 D=0.5 10 1 D=0.5 Z thJC Z thJA 0.2 0.1 0.2 10 -1 0.05 10 0 0.1 0.05 0.02 0.02 10 -2 0.01 10 -1 Single pulse 0.01 10 -3 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 10 3 tp -4 -8 -7 -6 10 10 10 10 -5 -4 -3 -2 10 10 10 10 -1 0 10 10 1 s 10 3 tp 7 2000-05-17 BTS 244 Z 5 Safe operating area 6 Typ. output characteristic ID=f(VDS ); D=0.01; TC =25°C; VGS =4.5V ID = f(VDS); Tj =25°C Parameter: VGS 3 10 180 10V A A Rdson=Vds/Id 7V tp=50µs 140 100µs ID 120 ID 10 2 6V 100 5V 1ms 80 4.5V 10ms 10 1 60 4V 100ms 40 3.5V 20 3V DC 10 0 0 10 10 1 V 10 0 0 2 1 V 2 4 VDS VDS 7 On-state resistance 8 On-state resistance RON = f(Tj ); ID=19A; VGS = 4.5V RON = f(Tj ); ID=19A; VGS = 10V 40 30 m max. 30 RDS(on) RDS(on) m typ. 25 20 max. 20 typ. 15 15 10 10 5 5 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj -25 0 25 50 75 100 125 °C 175 Tj 8 2000-05-17 BTS 244 Z 9 Typ. transfer characteristics 10 Typ. input threshold voltage ID = f(VGS); VDS = 12V; Tj = 25°C VGS(th) = f(Tj); VDS =VGS Parameter: ID 100 2.4 A V 2.0 VGS(th) 80 ID 70 60 1.8 130mA 1.6 13mA 1.4 50 1.2 40 1.0 1.3mA 130µA 0.8 30 0.6 20 0.4 10 0.2 0 0 1 2 V 3 0.0 -50 5 -25 0 25 50 75 100 125 °C VGS 175 Tj 11 Typ. capacitances 12 Typ. forward charcteristics of C = f(VDS); VGS =0 V, f=1 MHz reverse diode IF = f(VSD ) tp = 80µs (spread); Parameter: Tj 10 1 10 2 A nF 150°C 10 1 25°C C IF Ciss 10 0 Coss 10 0 Crss 10 -1 0 4 8 12 16 20 24 28 32 V 10 -1 0.0 40 VDS 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 VSD 9 2000-05-17 BTS 244 Z 13 Typ. gate charge 14 Drain-source break down voltage VGS = f(QGate); ID puls = 47A V(BR)DSS = f(Tj ) BTS 244 Z 66 V V VGS 12 0,2 VDS max 10 0,8 VDS max V(BR)DSS 16 62 60 8 58 6 56 4 54 2 52 0 0 20 40 60 80 100 50 -40 nC 140 QGate 0 40 80 120 °C 180 Tj 10 2000-05-17 BTS 244 Z Package Ordering Code Package Ordering Code P-TO220-5-3 Q67060-S6000-A2 P-TO220-5-62 Q67060-S6003-A2 9.9 9.5 3.7 4.4 4.4 1.3 2.8 9.9 8 2.4 0.5 0.8 0.2 GPT05165 1) shear and punch direction no burrs this surface 2) min. length by tinning 3) max. 11 mm allowable by tinning Package Ordering Code TO-220-5-43 Q67060-S6008 0.5 1.7 4.5 8.2 9.2 3.6 1.5 15˚ 1.7 4x1.7=6.8 1) 4 x 1.7 = 6.8 1.5 5.6 10.5 9.2 1) 3) 9.75 5 2) 12.8 15.6 0.8 1.3 0.2 2.4 M GPT05166 1) shear and punch direction no burrs this surface 11 2000-05-17 BTS 244 Z Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2000-05-17