Datasheet BTS737S3
Smart High-Side Power Switch
Four Channels: 4 x 35mΩ
Advanced Current Sense
Product Summary
Package
Operating Voltage
Vbb(on)
Active channels one
On-state Resistance
RON
35mΩ
Nominal load current
IL(NOM)
5.4A
Current limitation
IL(SCr)
5.0 ...40V
four parallel
9mΩ
11.1A
40A
P-DSO-28
40A
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
Very low standby current
Improved electromagnetic compatibility (EMC)
CMOS compatible input
Stable behaviour at undervoltage
Wide operating voltage range
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Reverse battery protection with external resistor
Overvoltage protection with external resistor (incl. load
dump)
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Function
• Proportional load current sense (with defined fault signal
Block Diagram
Vbb
IN1
IS1
IS2
Logic
Channel 1
Channel 2
Load 1
IN2
Load 2
IN3
IS3
IS4
IN4
Logic
Channel 3
Channel 4
Load 3
during thermal shutdown and current limit)
GND
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Load 4
2004-Feb-19
Datasheet BTS737S3
Functional diagram
overvoltage
protection
internal
voltage
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT1
IN1
ESD
temperature
sensor
Proportional sense
current
IS1
.
IN2
IS2
channel 1
control and protection circuit
of
channel 2
OUT2
GND1/2
IN3
IS3
LOAD
control and protection circuit
of
channel 3
OUT3
IN4
IS4
control and protection circuit
of
channel 4
GND3/4
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OUT4
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2004-Feb-19
Datasheet BTS737S3
Pin Definitions and Functions
Pin configuration
Pin
Symbol Function
1, 7, 8, Vbb
Positive power supply voltage. Design the
14,
wiring for the simultaneous max. short circuit
15, 28
currents from channel 1 to 4 and also for low
thermal resistance
4
IN1
Input 1,2, 3,4 activates channel 1,2,3,4 in case
of logic high signal
3
IN2
11
IN3
10
IN4
25,26,27 OUT1
Output 1,2,3,4 protected high-side power output
22,23,24 OUT2
of channel 1,23,4. Design the wiring for the
19,20,21 OUT3
max. short circuit current
16,17,18 OUT4
5
IS1
Diagnostic feedback 1 .. 4 of channel 1 to 4
Providing a sense current, proportional to the
6
IS2
load current
12
IS3
13
IS4
2
GND1/2 Ground of chip 1 (channel 1,2)
9
GND3/4 Ground of chip 2 (channel 3,4)
(top view)
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3
Vbb 1
GND1/2
IN2
IN1
IS1
IS2
Vbb
2
3
4
5
6
7
Vbb 8
GND3/4
IN4
IN3
IS3
IS4
Vbb
9
10
11
12
13
14
•
28 Vbb
27
26
25
24
23
22
OUT1
OUT1
OUT1
OUT2
OUT2
OUT2
21 OUT3
20
19
18
17
16
15
OUT3
OUT3
OUT4
OUT4
OUT4
Vbb
2004-Feb-19
Datasheet BTS737S3
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection1)
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V
RI4) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 4.7 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)6)
Ta = 25°C:
Ta = 85°C:
(all channels active)
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C6),
IL = 4.0 A, EAS = 0.8J, 0 Ω
one channel:
IL = 6.0 A, EAS = 1.0J, 0 Ω
two parallel channels:
IL = 9.5 A, EAS = 1.5J, 0 Ω
four parallel channels:
Vbb
Vbb
IL
VLoad dump5)
Values
Unit
40
36
V
V
IL(lim)2
60
V
-40 ...+150
-55 ...+150
3.7
1.9
°C
ZL
33
37
64
mH
VESD
1.0
4.0
8.0
kV
-10 ... +16
±0.3
±0.3
V
mA
Tj
Tstg
Ptot
W
see diagrams on page 10
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through sense pin (DC)
VIN
IIN
IIS
see internal circuit diagram page 9
1)
2)
3)
4)
5)
6)
Single pulse
Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω
resistor for the GND connection is recommended.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
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2004-Feb-19
Datasheet BTS737S3
Thermal Characteristics
Parameter and Conditions
Thermal resistance
junction - soldering point7)8),
junction – ambient8)
@ 6 cm2 cooling area
Symbol
each channel:
Rthjs
Rthja
one channel active:
all channels active:
Values
min
typ
Max
--
--
11
---
40
33
---
Unit
K/W
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 5 A
each channel,
Tj = 25°C: RON
see diagram, page 11
Tj = 150°C:
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
four parallel channels active:
Values
min
typ
Max
Unit
--5.0
6.7
10.5
30
55
5.4
7.4
11.1
35
64
----
mΩ
IL(GNDhigh)
--
--
1
mA
ton
toff
---
50
120
150
250
µs
dV/dton
0.2
--
0.9
V/µs
-dV/dtoff
0.1
--
0.9
V/µs
A
Device on PCB8), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected, VIN = 0,
see diagram page 10;
(not subject to production test - specified by design)
Turn-on time9)
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 Ω
Slew rate on 9)
VOUT rising from 10 to 30% of Vbb, RL = 12 Ω:
Slew rate off 9)
VOUT falling from 70 to 40% of Vbb, RL = 12 Ω:
7)
8)
9)
Soldering point: upper side of solder edge of device pin 7,8. See page 16.
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
See timing diagram on page 12.
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2004-Feb-19
Datasheet BTS737S3
Operating Parameters
Operating voltage
Overvoltage protection10)
I bb = 40 mA
Standby current11)
VIN = 0; see diagram page 12
5.0
41
-47
40
52
V
V
---
10
40
--
25
80
25
µA
---
1
--
6
15
µA
IGND
---
1.6
6.0
---
mA
IL(lim)
36
45
58
A
---
40
40
--
A
ms
Vbb(on)
Vbb(AZ)
Tj =-40...25°C: Ibb(off)
Tj =150°C:
Tj =125°C:
(not subject to production test - specified by design)
Off-State output current
Tj =-40...25°C: IL(off)
(included in Ibb(off))VIN = 0; each channel; Tj=150°C:
Operating current, VIN = 5V,
IGND = IGND1/2 + IGND3/4,
one channel on:
four channels on:
Protection Functions12)
Current limit, (see timing diagrams, page 13)
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two,three or four parallel channels
(see timing diagrams, page 13)
Initial short circuit shutdown time
Tj,start =25°C:
toff(SC)
--
4
---
41
150
--
47
-10
52
---
V
°C
K
--
--
14
V
--
500
--
mV
(see timing diagrams on page 13)
Output clamp (inductive load switch off)13)
VON(CL)
Tjt
∆Tjt
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery (not subject to production test - specified by design)
Reverse battery voltage 14)
-Vbb
Drain-source diode voltage (Vout > Vbb)15
-VON
IL = -2A; Tj = +150°C:
10)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
11) Measured with load; for the whole device; all channels off.
12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions
are not designed for continuous repetitive operation.
13) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL).
14)
The temperature protection and sense functionality is not active during reverse current operation! Input and
Status currents have to be limited (see max. ratings page 4 and circuit page 9).
15) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load.
Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode.
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2004-Feb-19
Datasheet BTS737S3
Input16)
Input resistance
RI
2.5
3.5
6.0
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
1.7
1.5
-1
20
--0.3
-50
3.2
--35
90
V
V
V
µA
µA
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
On state input current
VIN = 0.4 V:
VIN = 5 V:
Diagnostic Characteristics
Current sense ratio, static on-condition,
kILIS
--
5 300
--
4575
4100
4200
3580
5300
5300
5300
5800
6000
6300
6600
8080
5.4
6.3
7.5
V
kILIS =IL:IIS
IL = 10 A:
IL = 2 A:
IL = 1 A:
IL = 0.5 A:
Sense signal in case of fault-conditions17)
Vfault
Sense signal delay after thermal shutdown18)
(not subject to production test - specified by design)
Sense current saturation
Current sense output voltage limitation
IIS = 0, IL = 5 A:
tdelay(fault)
--
--
1
ms
IIS,lim
4
--
--
mA
5.4
6.3
7.5
V
IIS(LL)
IIS(LH)
---
-2.5
1
--
µA
tson(IS)
--
--
300
µs
Current sense leakage/offset current
VIN=0, VIS = 0, IL = 0:
VIN=5 V, VIS = 0, IL = 0:
Current sense settling time to IIS static±10% after
positive input slope, IL = 0
5 A,
VIS(lim)
(not subject to production test - specified by design)
16)
If ground resistors RGND are used, add the voltage drop across these resistors.
17)
In the case of current limitation or thermal shutdown the sense signal is no longer a current proportional to
the load current, but a fixed voltage of typ. 6 V.
18) In the case of thermal shutdown the V
signal remains for tdelay(fault) longer than the restart of the switch (see
fault
diagram on page 14).
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2004-Feb-19
Datasheet BTS737S3
Truth Table
Input
level
Output
level
L
H
L
H
Current
Sense
IIS
0
nominal
H
H
Vfault
L
H
L
H
L
H
L
H
L
L
L
L
H
H
Z
H
0
Vfault
0
Vfault
0
<nominal20)
0
0
L
L
0
Normal
Operation
CurrentLimitation19)
Short circuit to GND
Overtemperature
Short circuit to Vbb
Open load
Negative output
Voltage clamp
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Vfault = 6V typ, constant voltage independent of external used sense resistor.
Parallel switching of channels is possible by connecting the inputs and outputs in parallel. The current sense
outputs have to be connected with a single sense resistor.
Terms
Ibb
IIN1
V bb
IIN2
IIS1
V IN1
V IN2
IIS2
V IS1
V IS2
Leadfram e
3
5
2
6
IN 1
V bb
OUT1
IN 2
IS1
IS2
PROFET
Chip 1
OUT2
GND1/2
V O N1
25
26
27
22
23
24
V O N2
IL1
V bb
IIN3
V IN3
IIS3
IL2
V IN4
V O UT1
IIS4
V IS3
4
IIG ND1/2
IIN4
V O UT2
V IS4
Leadfram e
10
12
9
13
IN 3
V bb
OUT3
IN 4
IS 3
PROFE T
Chip 2
IS 4
GND3/4
OUT4
V O N3
19
20
21
16
17
18
V O N4
IL3
IL4
11
IIG ND3/4
V O UT3
V O UT4
Leadframe (Vbb) is connected to pin 1, 7, 8, 14, 15, 28.
19)
20)
Current limitation is only possible while the device is switched on.
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
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2004-Feb-19
Datasheet BTS737S3
Input circuit (ESD protection), IN1 to IN4
R
IN
Overvoltage output clamp, OUT1 or OUT2
+Vbb
I
VZ
ESD-ZD I
I
V
I
ON
GND
OUT
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Power GND
Sense output
VON clamped to VON(CL) = 47 V typ.
Normal operation: IS = IL / kILIS
VIS = IS * RIS; RIS = 1 kΩ nominal
RIS > 500Ω
Overvoltage protection of logic part
I
IS
GND1/2 or GND3/4
+ V bb
Sense output
logic
IS
V
IS
V
RI
IN
Vf
R
ESD-ZD
Logic
IS
IS
GND
V
ESD-Zener diode: VESD = 6.1 V typ., max 14 mA;
Integrated
GND resistor
RGND
Z1
R IS
GND
Operation under fault condition
so as thermal shut down or current limitation
Sense output
logic
Vfault
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 75 Ω
Vfault
Vf
ESD-ZD
R
Z2
Reverse battery protection
IS
- Vbb
GND
Logic
Vfault = 6V typ
Vfault < VESD under all conditions
IN
RI
Logic
MOSFET
IS
OUT
Power
MOSFET
Integrated
GND resistor
RGND
R IS
RL
Signal GND
Power GND
RGND = 75 Ω, RI = 3.5 kΩ typ,
Temperature protection and sense functionality is not active
during inverse current operation.
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2004-Feb-19
Datasheet BTS737S3
Inductive load switch-off energy
dissipation
GND disconnect
E bb
IN
E AS
Vbb
PROFET
IN
OUT
IS
bb
V
IN
V
OUT
PROFET
GND
V
ELoad
Vbb
=
V
GND
ST
L
IS
GND
ZL
{
EL
ER
R
L
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
2
EL = 1/2·L·I L
Vbb disconnect with energized inductive
load
high
IN
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
Vbb
PROFET
with an approximate solution for RL > 0 Ω:
OUT
EAS=
IS
GND
V
IL· L
(V + |VOUT(CL)|)
2·RL bb
ln (1+ |V
IL·RL
OUT(CL)|
)
Maximum allowable load inductance for
a single switch off (one channel)6)
bb
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
1000
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
100
10
1
0.1
0
1
2
3
4
5
6
7
IL [A]
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10
2004-Feb-19
Datasheet BTS737S3
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
60
Tj = 150°C
50
180
25°C
30
-40°C
20
0
3
5
7
9
30
40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [µA]
45
40
35
30
25
20
15
10
5
0
-50
0
50
100
150
200
Tj [°C]
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2004-Feb-19
Datasheet BTS737S3
Functionality diagrams
All diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The
channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each
channel as well as for permuted channels
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IN
Figure 1c: Behaviour of sense output:
Sense current (IS) and sense voltage (VS) as
function of load current dependent on the sense
resistor
Shown is VS and IS for three different sense
resistors. Curve 1 refers to a low resistor, curve 2 to
a medium-sized resistor and curve 3 to a big resistor.
Note, that the sense resistor may not fall short of a
minimum value of 500Ω.
VOUT
t on
IL
t off
tslc(IS)
t slc(IS)
VS
Load 1
VESD
Vfault
Load 2
3
IS,VS
t son(IS)
2
t soff(IS)
t
1
The sense signal is not valid during settling time after turn on or
change of load current.
IL
IS
1
Figure 1b: Vbb turn on:
IN
2
3
Vbb
IL(lim)
IL
IS = IL / kILIS
VIS = IS * RIS; RIS = 1 kΩ nominal
RIS > 500Ω
IL
IS,VS
proper turn on under all conditions
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2004-Feb-19
Datasheet BTS737S3
Figure 2a: Switching a lamp:
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
IN
IN
IL
ST
V
IL(lim)
OUT
VS
I
IL(SCr)
Vfault
L
t
Heating up may require several milliseconds, depending on
external conditions
IL(lim’) = 45 A typ. increases with decreasing temperature.
The initial peak current should be limited by the lamp and not by the
current limit of the device.
Figure 2b: Switching a lamp with current limit:
The behaviour of IS and VS is shown for a resistor,
which refers to curve 1 in figure 1c
IN
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
IN1/2
IL1 + IL2
IL(SCp)
VOUT
I L(SCr)
IL
t
IS
off(SC)
VS1, VS2
VS
Vfault
Vfault
t
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2004-Feb-19
Datasheet BTS737S3
Figure 6b: Current sense ratio21):
Figure 4a: Overtemperature:
Reset if Tj <Tjt
The behaviour of IS and VS is shown for a resistor,
which refers to curve 1 in figure 1c
10000
kILIS
IN
5000
IL
IS
0
[A] IL
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VS
Vfault
tdelay(fault)
TJ
t
Figure 6a: Current sense versus load current:
1.3
[mA]
1.2
I IS
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IL
0
0
1
2
3
4
5 [A] 6
21)
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14
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised at
least by a factor of two by calibrating the value of
kILIS for every single device.
2004-Feb-19
Datasheet BTS737S3
Package and Ordering Code
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Standard: P-DSO-28-16
+0.09
7.6 -0.2 1)
8˚ ma
x
0.35 x 45˚
0.23
2.65 max
0.2 -0.1
BTS 737 S3
Q67060-S6133
2.45 -0.2
Sales Code
Ordering Code
0.4 +0.8
1.27
0.35 +0.15 2)
0.1
0.2 28x
10.3 ±0.3
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
28
1
15
18.1 -0.4 1)
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
14
Information
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max rer side
2) Does not include dambar protrusion of 0.05 max per side
GPS05123
All dimensions in millimetres
Definition of soldering point with temperature Ts:
upper side of solder edge of device pin 15.
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Pin 7,8
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja
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For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies
Representatives worldwide (see address list).
15
2004-Feb-19