PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER N EW MOC8111 FEATURES • Current Transfer Ratio 20% Min. • No Base Terminal Connection for Improved Common Mode Interface Immunity • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Long Term Stability • Industry Standard Dual-in-Line Package • Underwriters Lab File #E52744 V • VDE 0884 Available with Option 1 D E DESCRIPTION The MOC8111 is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the IL1 the base terminal is not connected, resulting in a substantially improved common-mode interference immunity. Maximum Ratings (TA=25°C) Emitter Reverse Voltage .............................................. 6 V DC Forward Current ................................... 60 mA Surge Forward Current (t≤10 µs) .................. 2.5 A Total Power Dissipation............................ 100 mW Detector Collector-Emitter Breakdown Voltage ............ 30 V Collector Current ....................................... 50 mA Collector Current (t≤1 ms) ........................ 150 mA Total Power Dissipation............................ 150 mW Package Isolation Test Voltage between Emitter and Detector, Refer to Standard Climate 23/50 DIN 50014 ....................................5300 VACRMS Creepage ...................................................≥7 mm Clearance ...................................................≥7 mm Isolation Thickness between Emitter and Detector ............................≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ..............175 Isolation Resistance VIO=500 V, TA=25°C.................................1012Ω VIO=500 V, TA=100°C...............................1011Ω Storage Temperature Range ..... –55°C to +150°C Ambient Temperature Range..... –55°C to +100°C Soldering Temperature (max. 10 s, dip soldering distance to seating plane ≥1.5 mm) ...........................260°C Package Dimensions in inches (mm) Pin One ID. 3 2 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 6 5 Collector NC 3 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) min. .130 (3.30) .150 (3.81) 4° typ. 18° typ. .020 (.051) min. .010 (.25) .014 (.35) .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) .100 (2.54) typ. Electrical Characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF 1.15 1.5 V IF=10 mA Reverse Leakage Current IR 0.05 10 µA VR=6 V Capacitance CJ 25 pF V=0, f=1 MHz V IC=1 µA nA VCE=10 V V IE=10 µA pF VCE=0 V, f=1 MHz V IC=500 µA IF=10 mA mA IF=10 mA VCE=10 V VCC=10 V RL=100 Ω, IC=2 mA, see Figure 1 Emitter Detector Collector-Emitter Breakdown Voltage BVCEO 30 Collector-Emitter Leakage Current ICEO 1 50 Emitter-Collector Breakdown Voltage VECO Collector-Emitter Capacitance CCE 7 Collector Saturation Voltage VCESAT 0.15 Output Collector Current IC Turn On Time TON 7.5 20 µs Turn Off Time TOFF 5.7 20 µs 7 Package 5–221 2 0.4 5 Figure 1. Switching times Input Pulse VCC=10 V IC RL=100 Ω 10% Input Output Input current adjusted to achieve IC=2 mA Test Circuit Output Pulse 90% tr ton tf toff Waveforms MOC8050 5–222