DN2450 DATA SHEET (07/10/2015) DOWNLOAD

DN2450
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
Description
•
•
•
•
•
•
This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This combination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary breakdown.
High-input impedance
Low-input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakages
Applications
•
•
•
•
•
Normally-on switches
Battery operated systems
Voltage to current converters
Constant current sources
Current and voltage limiters
 2015 Microchip Technology Inc.
Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
DS20005404A-page 1
DN2450
Package Type
DRAIN
DRAIN
SOURCE
SOURCE
DRAIN
GATE
GATE
TO-252 (D-PAK)
TO-243AA (SOT-89)
See Table 2-1 for pin information
DS20005404A-page 2
 2015 Microchip Technology Inc.
DN2450
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage................................................................................................................................................................ BVDSX
Drain-to-gate voltage....................................................................................................................................................................BVDGX
Gate-to-source voltage................................................................................................................................................................... ±20V
Operating and storage temperature ............................................................................................................................. -55°C to +150°C
Maximum junction temperature.....................................................................................................................................................150°C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.1
ELECTRICAL SPECIFICATIONS
TABLE 1-1:
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
Drain-to-source breakdown voltage
500
–
–
V
VGS= -5.0V, ID= 100µA
Gate-to-source off voltage
-1.5
–
-3.5
V
VDS= 25V, ID= 10µA
–
–
-4.5
–
–
100
–
–
1.0
µA
VDS= BVDSX, VGS= -10V
–
–
1.0
mA
VDS= 0.8 BVDSX,
VGS= -10V, TA= 125°C (Note 2)
700
–
–
mA
VGS= 0V, VDS= 25V
Static drain-to-source on-state
resistance
–
7.0
10
Ω
VGS= 0V, ID= 300mA
Change in RDS(ON) with temperature
–
–
1.1
%/°C
DC Parameters (Note 1, unless otherwise stated)
BVDSX
VGS(OFF)
∆VGS(OFF) Change in VGS(OFF) with temperature
IGSS
ID(OFF)
IDSS
RDS(ON)
∆RDS(ON)
Gate body leakage
Drain-to-source leakage current
Saturated drain-to-source current
mV/°C VDS= 25V, ID= 10µA (Note 2)
nA
VGS= ±20V, VDS= 0V
VGS= 0V, ID= 300mA (Note 2)
AC Parameters (Note 2)
GFS
Forward transconductance
500
–
–
CISS
Input capacitance
–
150
200
COSS
Common source output capacitance
–
40
55
CRSS
Reverse transfer capacitance
–
15
25
td(ON)
Turn-on delay time
–
–
15
Rise time
–
–
20
Turn-off delay time
–
–
15
Fall time
–
–
15
Diode forward voltage drop
–
–
Reverse recovery time
–
800
tr
td(OFF)
tf
mmho VDS= 10V, ID= 300mA
pF
VGS= -10V,
VDS= 25V,
f = 1MHz
ns
VDD= 25V,
ID= 300mA,
RGEN= 25Ω,
1.8
V
VGS= -5.0V, ISD= 300mA (Note 1)
–
ns
VGS= -5.0V, ISD= 300mA (Note 2)
Diode Parameters
VSD
trr
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
 2015 Microchip Technology Inc.
DS20005404A-page 3
DN2450
TABLE 1-2:
TABLE 1-3:
TYPICAL THERMAL RESISTANCE
Package
θja
TO-252 (D-PAK)
81°C/W
TO-243AA (SOT-89)
133°C/W
THERMAL CHARACTERISTICS
Package
ID1
continuous
(mA)
ID
pulsed
(mA)
Power
Dissipation
@TA = 25°C (W)
IDR1
(mA)
IDRM
(mA)
TO-252 (D-PAK)
350
1000
2.52
350
1000
2
230
900
TO-243AA (SOT-89)
1.
2.
2.0
230
900
1.6
ID continuous is limited by max rated Tj
Mounted on FR4 board, 25mm x 25mm x 1.57 mm
PIN DESCRIPTION
The locations of the pins are listed in Package Type.
TABLE 2-1:
PIN DESCRIPTION
Pin # TO-252
Pin # TO-243AA
Function
1
1
GATE
3
3
SOURCE
2,4
2,4
DRAIN
DS20005404A-page 4
 2015 Microchip Technology Inc.
DN2450
3.0
APPLICATION INFORMATION
Figure shows the switching waveform and test circuit
for DN2450.
0V
VDD
90%
INPUT
-10V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
t(OFF)
tr
td(OFF)
RGEN
10%
90%
0V
FIGURE 3-1:
OUTPUT
tf
10%
OUTPUT
RL
INPUT
D.U.T.
90%
Switching Waveforms and Test Circuit
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max) (Ω)
IDSS
(min) (mA)
500
10
700
 2015 Microchip Technology Inc.
DS20005404A-page 5
DN2450
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
TO-252 (D-PAK)
Example
XXXX
XXXXX e3
YYWWNNN
DN
2450 e3
1517343
3-lead TO-243AA *
(SOT-89)
XXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005404A-page 6
Example
DN4E517
343
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
 2015 Microchip Technology Inc.
DN2450
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Side View
Top View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
Dimensions
(mm)
A
b
b1
C
D
D1
E
E1
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
e
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
 2015 Microchip Technology Inc.
DS20005404A-page 7
DN2450
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005404A-page 8
 2015 Microchip Technology Inc.
DN2450
APPENDIX A:
REVISION HISTORY
Revision A (July 2015)
• Update file to new format
 2015 Microchip Technology Inc.
DS20005404A-page 9
DN2450
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-
XX
X
-
Package Environmental
Options
X
Media
Type
Device:
DN2450 = N-Channel, Depletion-Mode,
vertical DMOS FET
Package:
K4
N8
= TO-252 (D-PAK)
= TO-243AA (SOT-89)
Environmental
G
= Lead (Pb)-free/ROHS-compliant package
Media Type:
(blank)
= 2000/Reel
DS20005404A-page 10
Examples:
a)
DN2450K4-G
b)
DN2450N8-G
TO-252 package,
2000/reel
TO-243AA package,
2000/reel
 2015 Microchip Technology Inc.
DN2450
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-63277-585-6
QUALITYMANAGEMENTSYSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
 2015 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20005404A-page 11
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
China - Dongguan
Tel: 86-769-8702-9880
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Pforzheim
Tel: 49-7231-424750
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Venice
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Poland - Warsaw
Tel: 48-22-3325737
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
01/27/15
DS20005404A-page 12
 2015 Microchip Technology Inc.
Similar pages