DN2530 DATA SHEET (01/29/2016) DOWNLOAD

DN2530
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
Description
•
•
•
•
•
•
The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device
with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature
coefficient
inherent
in
Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
High-input impedance
Low-input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
•
•
•
•
•
•
•
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying
applications where high breakdown-voltage, high-input
impedance, low-input capacitance, and fast switching
speeds are desired.
Package Types
DRAIN
DRAIN
SOURCE
GATE
TO-92
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
See Table 2-1 for pin information
 2016 Microchip Technology Inc.
DS20005451A-page 1
DN2530
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage ......................................................................................................................................... BVDSX
Drain-to-gate voltage.............................................................................................................................................BVDGX
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter
Symbol
Min
Typ
Max
Units Conditions
DC Parameters (Note 1, unless otherwise stated)
BVDSX
300
-
-
V
VGS= -5.0V, ID= 100 µA
VGS(OFF)
-1.0
-
-3.5
V
VDS= 25V, ID= 10 µA
∆VGS(OFF)
-
-
-4.5
IGSS
-
-
100
-
-
10
µA
VDS= Max rating, VGS= -10V
-
-
1.0
mA
VDS= 0.8 Max Rating,
VGS= -10V, TA= 125°C (Note 2)
IDSS
200
-
-
mA
VGS= 0V, VDS= 25V
RDS(ON)
-
-
12
Ω
∆RDS(ON)
-
-
1.1
%/°C
Forward transconductance
GFS
300
-
-
Input capacitance
CISS
-
-
300
Common source output capacitance
COSS
-
-
30
Reverse transfer capacitance
CRSS
-
-
5
Turn-on delay time
td(ON)
-
-
10
tr
-
-
15
td(OFF)
-
-
15
tf
-
-
20
VSD
–
–
trr
–
600
Drain-to-source breakdown voltage
Gate-to-source off voltage
VGS(OFF) change with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state
resistance
Change in RDS(ON) with temperature
ID(OFF)
mV/°C VDS= 25V, ID= 10 µA(Note 2)
nA
VGS= ±20V, VDS= 0V
VGS= 0V, ID= 150 mA
VGS= 0V, ID= 150 mA(Note 2)
AC Parameters (Note 2)
Rise time
Turn-off delay time
Fall time
mmho VDS= 10V, ID= 150 mA
pF
VGS= -10V,
VDS= 25V,
f = 1 MHz
ns
VDD= 25V,
ID= 150 mA,
RGEN= 25Ω,
1.8
V
VGS = -10V, ISD= 150 mA
(Note 1)
–
ns
VGS = -10V, ISD= 1.0A (Note 2)
Diode Parameters
Diode forward voltage drop
Reverse recovery time
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
DS20005451A-page 2
 2016 Microchip Technology Inc.
DN2530
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Parameter
Symbol
Min
Typ
Max
Units Conditions
TA
-55
–
150
°C
Thermal Resistance, TO-92
θja
–
132
–
°C/W
Thermal Resistance, TO-243AA
θja
–
133
–
°C/W
Temperature Ranges
Operating and Storage Temperature
Package Thermal Resistances
THERMAL CHARACTERISTICS
Package
ID(1)
continuous
(mA)
ID
pulsed
(mA)
Power
Dissipation
@TA = 25°C (W)
IDR(1)
(mA)
IDRM
(mA)
TO-92
175
500
0.74
175
500
TO-243AA (SOT-89)
200
500
1.6 (2)
200
500
Note 1: ID continuous is limited by max rated TJ
2: Mounted on FR4 board, 25mm x 25mm x 1.57 mm
2.0
PIN DESCRIPTION
The locations of the pins are listed in Package Types
and Packaging Information.
TABLE 2-1:
PIN DESCRIPTION
Pin # TO-92
Pin # TO-243AA
Function
2
1
GATE
3
2, 4
DRAIN
1
3
SOURCE
 2016 Microchip Technology Inc.
DS20005451A-page 3
DN2530
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 shows the switching waveform and test circuit for DN2530. Figure 3-2 and Figure 3-3 provide typical performance curves.
0V
VDD
90%
INPUT
-10V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
t(OFF)
tr
td(OFF)
RGEN
10%
90%
0V
FIGURE 3-1:
OUTPUT
tf
10%
OUTPUT
RL
INPUT
D.U.T.
90%
Switching Waveforms and Test Circuit
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max) (Ω)
IDSS
(min) (mA)
300
12
200
DS20005451A-page 4
 2016 Microchip Technology Inc.
DN2530
Output Characteristics
1.0
Saturation Characteristics
0.25
-0.5V
VGS = 1.0V
VGS = 1.0V
0.8
-1.0V
0V
0.5V
0.2
0.5V
ID (amperes)
ID (amperes)
0.6
0V
0.4
-0.5V
0.15
0.1
-1.5V
-1.0V
0.2
0.05
-1.5V
0
0
50
100
150
200
0
250
0
1
2
4
5
Power Dissipation vs. Ambient Temperature
Transconductance vs. Drain Current
0.5
3
VDS (volts)
VDS (volts)
2.0
VDS = 10V
TO-243AA
0.4
1.6
0.3
TA = 25°C
PD (watts)
GFS (siemens)
TA = -55°C
TA = 125°C
0.2
1.2
0.8
TO-92
0.4
0.1
0
0
0
0.05
0.1
0.15
0.2
0.25
0
25
50
100
125
150
Thermal Response Characteristics
Maximum Rated Safe Operating Area
1
75
TA (°C)
ID (amperes)
1.0
Thermal Resistance (normalized)
TO-92 (pulsed)
TO-92 (DC)
ID (amperes)
0.1
0.01
0.8
TO-243AA
TA = 25°C
PD = 1.6W
0.6
0.4
TO-92
TC = 25°C
PD = 1.0W
0.2
TC = 25°C
0.001
1
10
100
1000
VDS (volts)
FIGURE 3-2:
0
0.001
0.01
0.1
1.0
10
tP (seconds)
Typical Performance Curves
 2016 Microchip Technology Inc.
DS20005451A-page 5
DN2530
BVDSS Variation with Temperature
1.10
On-Resistance vs. Drain Current
50
VGS = 0V
VGS = -5V
ID = 100mA
40
RDS(ON) (ohms)
BVDSS (normalized)
1.05
1.00
0.95
0.90
30
20
10
0.85
-50
0
1.0
50
100
0
0
150
0.2
0.4
0.6
0.8
1.0
Tj (°C)
ID (amps)
Transfer Characteristics
VGS(OFF) and RDS(ON) Variation with Temperature
2.5
VDS = 10V
TA = -55°C
0.8
2
RDS(ON) @ ID = 150mA
0.6
VGS(th) (normalized)
ID (amperes)
25°C
125°C
0.4
0.2
1.5
VGS(OFF) @ 10mA
1
0.5
0
-2
-1
0
1
0
-50
2
0
50
VGS (Volts)
200
100
150
Tj (°C)
Capacitance Vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
15
f = 1MHz
VGS = -10V
CISS
10
VGS (volts)
C (picofarads)
150
100
50
VDS = 40V
5
VDS = 20V
250pF
0
COSS
152pf
CRSS
0
0
10
20
30
40
VDS (Volts)
FIGURE 3-3:
DS20005451A-page 6
-5
0
1
2
3
4
5
QC (Nanocoulombs)
Typical Performance Curves (continued)
 2016 Microchip Technology Inc.
DN2530
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
3-lead TO-92
Example
XXXXXX
XXXX e3
YWWNNN
DN2530
N3 e3
513343
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example
3-lead TO-243AA *
(SOT-89)
XXXXYWW
NNN
DN5T513
343
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
 2016 Microchip Technology Inc.
DS20005451A-page 7
DN2530
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Side View
Top View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
Dimensions
(mm)
A
b
b1
C
D
D1
E
E1
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
e
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
DS20005451A-page 8
 2016 Microchip Technology Inc.
DN2530
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
 2016 Microchip Technology Inc.
DS20005451A-page 9
DN2530
APPENDIX A:
REVISION HISTORY
Revision A (January 2016)
• Converted Supertex Doc #DSFP-DN2530 to
Microchip DS20005451A.
• Removed 2000/Reel option for TO-92 package.
DS20005451A-page 10
 2016 Microchip Technology Inc.
DN2530
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-
XX
X
-
Package Environmental
Options
X
Media
Type
Device:
DN2530 = N-Channel, Depletion-Mode,
Vertical DMOS FET
Package:
N3
N8
= TO-92, 3-lead
= TO-243AA (SOT-89), 3-lead
Environmental
G
= Lead (Pb)-free/ROHS-compliant package
Media Type:
(blank)
= 1000/Reel for N3 packages
= 2000/Reel for N8 packages
 2016 Microchip Technology Inc.
Examples:
a)
DN2530N3-G
b)
DN2530N8-G
TO-92 package,
1000/reel
TO-243AA package,
2000/reel
DS20005451A-page 11
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DS20005451A-page 12
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ISBN: 978-1-5224-0250-3
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DS20005451A-page 13
 2016 Microchip Technology Inc.