Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Telecom Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number Package Option Packing DN3765K4-G TO-252 (D-PAK) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Value Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V Package TO-252 (D-PAK) Doc.# DSFP-DN3765 A070113 θja 81OC/W 650V 8.0Ω 200mA GATE -55OC to +150OC SOURCE TO-252 (D-PAK) 150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance IDSS (min) DRAIN Parameter Maximum junction temperature RDS(ON) (max) Pin Configuration Absolute Maximum Ratings Operating and storage temperature BVDSX/BVDGX Product Marking Si YYWW DN3765 LLLLLLL YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging Package may or may not include the following marks: Si or TO-252 (D-PAK) Supertex inc. www.supertex.com DN3765 Thermal Characteristics ID Package Power Dissipation ‡ (continuous) ID (pulsed) @TA = 25OC 300mA 500mA 2.5W TO-252 (D-PAK) † IDR† IDRM 300mA 500mA Notes: † ID (continuous) is limited by max rated Tj of 150OC. ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 650 - - V VGS = -5.0V, ID = 100µA VGS(OFF) Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID= 10µA - - -4.5 - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA VGS = -10V, VDS = Max Rating - - 1.0 mA VGS = -10V, VDS = 0.8 Max Rating, TA = 125°C 200 - - mA VGS = 0V, VDS = 25V Static drain-to-source on-state resistance - - 8.0 Ω VGS = 0V, ID = 150mA Change in RDS(ON) with temperature - - 1.1 %/ C VGS = 0V, ID = 150mA 100 - - ΔVGS(OFF) Change in VGS(OFF) with temperature IGSS Gate body leakage current ID(OFF) IDSS Drain-to-source leakage current Saturated drain-to-source current RDS(ON) ΔRDS(ON) Conditions mV/ C VDS = 25V, ID= 10µA O O GFS Forward transductance CISS Input capacitance - - 825 COSS Common source output capacitance - - 190 CRSS Reverse transfer capacitance - - 110 td(ON) Turn-on delay time - - 50 Rise time - - 75 Turn-off delay time - - 75 Fall time - - 100 Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 200mA Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 200mA tr td(OFF) tf VSD trr mmho ID = 100mA, VDS = 10V pF ns VGS = -10V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 150mA, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-DN3765 A070113 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com DN3765 3-Lead TO-252 (D-PAK) Package Outline (K4) b3 E A c2 E1 4 L3 θ1 D1 H D 1 2 3 L4 L5 Note 1 View B b2 b e Front View Side View Rear View Gauge Plane A1 Seating Plane L2 θ L L1 View B Note: 1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol Dimension (inches) A A1 b b2 b3 c2 D D1 E E1 MIN .086 .000* .025 .030 .195 .018 .235 .205 .250 .170 NOM - - - - - - .240 - - - MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .200* e .090 BSC H L .370 .055 - .060 .410 .070 L1 .108 REF L2 .020 BSC θ θ1 .035 0 0O - - - .040 .060 10 L3 L4 L5 .035 .025* .050 † O O 15O JEDEC Registration TO-252, Variation AA, Issue E, June 2004. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version F040910. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-DN3765 A070113 3 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com