DN3765 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
DN3765
N-Channel Depletion-Mode
Vertical DMOS FET
Features
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General Description
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Applications
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Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Telecom
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Product Summary
Part Number
Package Option
Packing
DN3765K4-G
TO-252 (D-PAK)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Value
Drain-to-source voltage
BVDSX
Drain-to-gate voltage
BVDGX
Gate-to-source voltage
±20V
Package
TO-252 (D-PAK)
Doc.# DSFP-DN3765
A070113
θja
81OC/W
650V
8.0Ω
200mA
GATE
-55OC to +150OC
SOURCE
TO-252 (D-PAK)
150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
IDSS (min)
DRAIN
Parameter
Maximum junction temperature
RDS(ON) (max)
Pin Configuration
Absolute Maximum Ratings
Operating and storage temperature
BVDSX/BVDGX
Product Marking
Si YYWW
DN3765
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-252 (D-PAK)
Supertex inc.
www.supertex.com
DN3765
Thermal Characteristics
ID
Package
Power Dissipation ‡
(continuous)
ID
(pulsed)
@TA = 25OC
300mA
500mA
2.5W
TO-252 (D-PAK)
†
IDR†
IDRM
300mA
500mA
Notes:
† ID (continuous) is limited by max rated Tj of 150OC.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSX
Drain-to-source breakdown voltage
650
-
-
V
VGS = -5.0V, ID = 100µA
VGS(OFF)
Gate-to-source off voltage
-1.5
-
-3.5
V
VDS = 25V, ID= 10µA
-
-
-4.5
-
-
100
nA
VGS = ± 20V, VDS = 0V
-
-
10
µA
VGS = -10V, VDS = Max Rating
-
-
1.0
mA
VGS = -10V, VDS = 0.8 Max Rating,
TA = 125°C
200
-
-
mA
VGS = 0V, VDS = 25V
Static drain-to-source on-state resistance
-
-
8.0
Ω
VGS = 0V, ID = 150mA
Change in RDS(ON) with temperature
-
-
1.1
%/ C
VGS = 0V, ID = 150mA
100
-
-
ΔVGS(OFF) Change in VGS(OFF) with temperature
IGSS
Gate body leakage current
ID(OFF)
IDSS
Drain-to-source leakage current
Saturated drain-to-source current
RDS(ON)
ΔRDS(ON)
Conditions
mV/ C VDS = 25V, ID= 10µA
O
O
GFS
Forward transductance
CISS
Input capacitance
-
-
825
COSS
Common source output capacitance
-
-
190
CRSS
Reverse transfer capacitance
-
-
110
td(ON)
Turn-on delay time
-
-
50
Rise time
-
-
75
Turn-off delay time
-
-
75
Fall time
-
-
100
Diode forward voltage drop
-
-
1.8
V
VGS = -5.0V, ISD = 200mA
Reverse recovery time
-
800
-
ns
VGS = -5.0V, ISD = 200mA
tr
td(OFF)
tf
VSD
trr
mmho ID = 100mA, VDS = 10V
pF
ns
VGS = -10V,
VDS = 25V,
f = 1.0MHz
VDD = 25V,
ID = 150mA,
RGEN = 25Ω
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-DN3765
A070113
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
DN3765
3-Lead TO-252 (D-PAK) Package Outline (K4)
b3
E
A
c2
E1
4
L3
θ1
D1
H
D
1
2
3
L4
L5
Note 1
View B
b2
b
e
Front View
Side View
Rear View
Gauge
Plane
A1
Seating
Plane
L2
θ
L
L1
View B
Note:
1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.
Symbol
Dimension
(inches)
A
A1
b
b2
b3
c2
D
D1
E
E1
MIN
.086
.000*
.025
.030
.195
.018
.235
.205
.250
.170
NOM
-
-
-
-
-
-
.240
-
-
-
MAX
.094
.005
.035
.045
.215
.035
.245
.217*
.265
.200*
e
.090
BSC
H
L
.370
.055
-
.060
.410
.070
L1
.108
REF
L2
.020
BSC
θ
θ1
.035
0
0O
-
-
-
.040
.060
10
L3
L4
L5
.035
.025*
.050
†
O
O
15O
JEDEC Registration TO-252, Variation AA, Issue E, June 2004.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO252K4, Version F040910.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-DN3765
A070113
3
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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