DN2625 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
DN2625
N-Channel Depletion-Mode Vertical DMOS
FET in Single and Dual Options
Features
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General Description
Very low gate threshold voltage
Designed to be source-driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Well matched for low second harmonic when
driven by Supertex MD2130
The Supertex DN2625 is a low threshold depletion-mode (normallyon) transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling capabilities
of bipolar transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
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Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Medical ultrasound beamforming
Ultrasonic array focusing transmitter
Piezoelectric transducer waveform drivers
High speed arbitrary waveform generator
Normally-on switches
Solid state relays
Constant current sources
Power supply circuits
Ordering Information
The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad
DFN package. The DN2625K6-G in the 14-lead QFN package is not
recommended for new designs, but may continue to be purchased
for existing designs.
Part Number
DN2625K4-G
DN2625DK6-G
Package Option
TO-252 D-PAK
8-Lead DFN
Packing
1000/Bag
490/Tray
DN2625DK6-G M932
8-Lead DFN
2500/Reel
DN2625K6-G*
14-Lead QFN
490/Tray
Product Summary
BVDSX/BVDGX
VGS(OFF)
IDS (pulsed)
(max)
(VGS = 0.9V)
(min)
-2.1V
3.3A
250V
Pin Configuration
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
* This package obsolete. For single MOSFETs use the TO-252 D-PAK (K4), for dual
MOSFETs use the 8-Lead DFN (K6) (dual pad).
SOURCE
GATE
TO-252 D-PAK
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
S1
1
250V
G1
2
S2
3
250V
-55OC to +150OC
300OC
Distance of 1.6mm from case for 10 seconds.
6 D2
D2
5 D2
14
13
DRAIN
12
11 GATE
SOURCE 2
10 SOURCE
SOURCE 3
9 SOURCE
SOURCE 4
8-Lead DFN (dual pad)
DRAIN
1
5
DRAIN
6
DRAIN
7
8 SOURCE
DRAIN
14-Lead QFN
(top view)
(top view)
Typical Thermal Resistance
Package
θja
TO-252 D-PAK
81OC/W
8-Lead DFN (dual pad)2
29OC/W
14-Lead QFN2
23OC/W
1
1.
2.
Doc.# DSFP-DN2625
C060313
GATE
7 D1
±20V
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
*
G2 4
DRAIN
8 D1
D1
4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
4-layer, 1oz, 3x4inch PCB, with 12-via for drain pad.
Supertex inc.
www.supertex.com
DN2625
TO-252 D-PAK
T
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
= “Green” Packaging
DN2625
LLLLLL
YYWW
AAACCC
O
LE
Si YYWW
DN2625
LLLLLLL
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
= “Green” Packaging
S
D2625D
LLLLLL
YYWW
AAACCC
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
E
Packages may or may not include the following marks: Si or
O
B
Product Marking
8-Lead DFN (dual pad)
14-Lead QFN
This package is not recommended
for new designs.
Thermal Characteristics
ID
Package
ID
(continuous)1
(pulsed)
IDR1
IDRM
TO-252 D-PAK
1.1A
3.3A
1.1A
3.3A
8-Lead DFN (dual pad)
1.1A
3.3A
1.1A
3.3A
14-Lead QFN
1.1A
3.3A
1.1A
3.3A
Notes:
1. ID (Continuous) is limited by max. Tj.
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSX
Drain-to-source breakdown voltage
250
-
-
V
VGS = -2.5V, ID = 50µA
BVDGX
Drain-to-gate breakdown voltage
250
-
-
V
VGS = -2.5V, ID = 50µA
VGS(OFF)
Gate-to-source off voltage
-1.5
-
-2.1
V
VDS = 15V, ID = 100µA
Change in VGS(OFF) with temperature
-
-
-4.5
mV/ C
VDS = 15V, ID = 100µA
Gate body leakage current
-
-
100
nA
VGS = ±20V, VDS = 0V
-
-
1.0
-
-
200
Saturated drain-to-source current
1.1
-
-
A
VGS = 0V, VDS = 15V
IDS(PULSE)
Pulsed drain-to-source current
3.1
3.3
-
A
VGS = 0.9V, VDS = 15V
(with duty cycle of 1%)
RDS(ON)
Static drain-to-source on-resistance
-
-
3.5
Ω
VGS = 0V, ID = 1.0A
ΔRDS(ON)
Change in RDS(ON) with temperature
-
-
1.1
%/ C
VGS = 0V, ID = 200mA
100
-
-
mmho
VDS = 10V, ID = 150mA
ΔVGS(OFF)
IGSS
ID(OFF)
IDSS
Drain-to-source leakage current
GFS
Forward transconductance
CISS
Input capacitance
-
800
1000
COSS
Common source output capacitance
-
70
210
CRSS
Reverse transfer capacitance
-
18
70
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
20
Turn-off delay time
-
-
10
Fall time
-
-
20
VSD
Diode forward voltage drop
-
-
1.8
QG
Total gate charge
-
-
7.04
QGS
Gate-to-source charge
-
-
0.783
QGD
Gate-to-drain charge
-
-
3.73
tr
td(OFF)
tf
Doc.# DSFP-DN2625
C060313
2
O
µA
O
Conditions
VDS = 250V, VGS = -5.0V
VDS = 250V, VGS = -5.0V, TA = 125OC
pF
VGS = -2.5V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 25V,
ID = 150mA,
RGEN = 3.0Ω,
VGS = 0v to -10V
V
VGS = -2.5V, ISD = 150mA
nC
ID = 3.5A,
VDS = 100V,
VGS = 1.5V
Supertex inc.
www.supertex.com
DN2625
Switching Waveforms and Test Circuit
0V
INPUT
-10V
VDD
90%
Pulse
Generator
10%
t(ON)
t(OFF)
VDD
tf
90%
0V
INPUT
10%
10%
OUTPUT
OUTPUT
RGEN
td(OFF)
tr
td(ON)
RL
D.U.T.
90%
Typical Performance Curves
Saturation Characteristics
Output Characteristics
5.5
7.0
6.0
VGS = 2.0V
5.0
VGS = 1.5V
VGS = 0.5V
4.0
VGS = 0V
VGS = -0.5V
3.0
VGS = -1.0V
VGS = -1V
4.0
VGS = 0V
VGS = -0.5V
VGS = 0.5V
VGS = 1V
VGS = 1.5V
3.0
VGS = 2V
2.5
2.0
VGS = -1.5V
VGS = -2.0V
2.0
VGS = -1.5V
4.5
3.5
VGS = 1.0V
ID (A)
ID (amps)
VGS = -2V
5.0
1.5
1.0
1.0
0.5
0.0
0
50
100
150
200
VDS (volts)
0.0
250
0
1
2
3
4
5
VDS (V)
6
7
8
9
10
BVDSX Variation With Temperature
Transfer Characteristics
10
-55OC
9
1.20
1.15
ID (amps)
7
BVDSX (normalized)
8
25OC
6
125OC
5
4
3
2
1.05
VGS = -2.5V
ID = 1mA
1.00
0.95
0.90
0.85
1
0
1.10
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
0.80
-50
4.0
VGS (V)
Doc.# DSFP-DN2625
C060313
-25
0
25
50
75
100
125
150
Tj (OC)
3
Supertex inc.
www.supertex.com
DN2625
Typical Performance Curves (cont.)
Transconductance vs Drain Current
On-Resistance vs Drain Current
5.0
4.0
VGS = 1V
4.5
3.5
4.0
GFS (Siemens)
RDS(ON) (ohms)
-55OC
3.0
3.5
3.0
2.5
2.0
1.5
1.0
2.5
25OC
2.0
1.5
1.0
125OC
0.5
0.5
0.0
VDS = 10V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.0
5.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
ID (A)
ID (A)
1.25
2.50
1.20
2.25
1.15
2.00
1.75
1.10
VGS(OFF) @100µA
VDS = 15V
1.05
1.50
1.25
1.00
0.95
1.00
RDS(ON) @VGS = 1V
ID =1A
0.90
0.75
0.50
0.85
0.80
RDS(ON) (normalized)
VGS(OFF) (normalized)
VGS(OFF) and RDS(ON) Variation With Temperature
-50
-25
0
25
50
75
100
125
0.25
150
Tj (OC)
Doc.# DSFP-DN2625
C060313
4
Supertex inc.
www.supertex.com
DN2625
3-Lead TO-252 D-PAK Package Outline (K4)
b3
E
A
c2
E1
4
L3
θ1
D1
H
D
1
2
3
L4
L5
Note 1
View B
b2
b
e
Front View
Side View
Rear View
Gauge
Plane
A1
Seating
Plane
L2
θ
L
L1
View B
Note:
1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.
Symbol
Dimension
(inches)
MIN
A
A1
b
b2
b3
c2
D
D1
E
E1
.086
.000*
.025
.030
.195
.018
.235
.205
.250
.170
NOM
-
-
-
-
-
-
.240
-
-
-
MAX
.094
.005
.035
.045
.215
.035
.245
.217*
.265
.182*
e
.090
BSC
H
L
.370
.055
-
.060
.410
.070
L1
L2
.108
REF
.020
BSC
L3
L4
L5
θ
θ1
.035
.025*
.045
0O
0O
-
-
-
-
-
.050
.040
.060
10O
15O
JEDEC Registration TO-252, Variation AA, Issue E, June 2004.
* This dimension is not specified in the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO252K4, Version E041309.
Doc.# DSFP-DN2625
C060313
5
Supertex inc.
www.supertex.com
DN2625
8-Lead DFN Package Outline (K6)
5.00x5.00mm body, 0.90mm height (max), 1.27mm pitch (dual pad)
K1
D
8
D2
K1/2
D2
8
E2
E
E2
Note 1
Note 1
(Index Area
D/2 x E/2)
Note 1
(Index Area
D/2 x E/2)
1
1
Top View
View B
Bottom View
Note 3
θ
A A3
L
Seating
Plane
A1
L1
e
b
Note 2
View B
Side View
Notes:
1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or
a printed indicator.
2. Depending on the method of manufacturing, a maximum of 0.15mm pullback (L1) may be present.
3. The inner tip of the lead may be either rounded or square.
Symbol
Dimension
(mm)
A
A1
MIN
0.80
0.00
NOM
0.85
-
MAX
0.90
0.05
A3
0.20
REF
b
D
D2
E
E2
0.35
4.90
1.93
4.90
1.90
0.40
5.00
2.03
5.00
2.00
0.45
5.10
2.13
5.10
2.10
e
1.27
BSC
K1
0.40
REF
L
L1
θ
0.40
0.00
0O
0.50
-
-
0.60
0.15
14O
Drawings not to scale
Supertex Doc. #: DSPD-8DFNK65x5P127, Version A040209
Doc.# DSFP-DN2625
C060313
6
Supertex inc.
www.supertex.com
DN2625
14-Lead QFN Package Outline (K6)
5.00x5.00mm body, 1.00mm height (max), 1.27mm pitch
E2
E
14
14
Pin 1
1
Note 1
(Index Area
D/2 x E/2)
e
D
Note 1
(Index Area
D/2 x E/2)
D2
Exposed
Pad
b
e
AA
Top View
BB
Bottom View
CC
DD
θ
A
A3
A1
Seating
Plane
Side View
Notes:
1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or
a printed indicator.
Symbol
A
A1
MIN
Dimension
NOM
(mm)
MAX
0.80
0.00
0.90
0.02
1.00
0.05
A3
0.20
REF
b
D
D2
E
E2
0.46
4.85
4.45
4.85
2.52
0.51
5.00
4.50
5.00
2.57
0.58
5.15
4.55
5.15
2.62
e
1.27
BSC
AA
BB
CC
DD
θ
0.152 0.473
0.66 0.456
0O
0.252 0.523
0.71 0.506
-
0.352 0.583
0.77 0.566 14O
Drawings not to scale.
Supertex Doc. #: DSPD-14QFNK65X5P127, Version B090808.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-DN2625
C060313
7
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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