Supertex inc. TP2510 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (-2.4V max.) ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Part Number TP2510N8-G Product Summary Package Option Packing TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Typical Thermal Resistance θja TO-243AA (SOT-89) 133OC/W -100V VGS(th) ID(ON) -2.4V -1.5A (max) (max) 3.5Ω (min) DRAIN SOURCE DRAIN GATE -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package RDS(ON) BVDSS/BVDGS Pin Configuration Absolute Maximum Ratings Operating and storage temperature Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-243AA (SOT-89) Product Marking TP5AW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Doc.# DSFP-TP2510 C081413 Supertex inc. www.supertex.com TP2510 Thermal Characteristics ID Package Power Dissipation (continuous) ID (pulsed) @ TA = 25OC -480mA -2.5A 1.6W TO-243AA (SOT-89) † IDR† IDRM -480mA -2.5A † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25°C unless otherwise specified ) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -100 - - V VGS = 0V, ID = -2.0mA VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - - 5.0 mV/OC VGS = VDS, ID= -1.0mA IGSS Gate body leakage - - -100 nA VGS = ± 20V, VDS = 0V - -10 μA IDSS Zero gate voltage drain current - VGS = 0V, VDS = Max Rating - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current -0.4 -0.6 - -1.5 -2.5 - 5.0 7.0 2.0 3.5 ∆VGS(th) RDS(ON) ∆RDS(ON) GFS VGS = -10V, VDS = -25V VGS = -5.0V, ID = -250mA - Change in RDS(ON) with temperature - - 1.7 %/OC VGS = -10V, ID = -750mA 300 360 - mmho VDS = -25V, ID = -750mA - 80 40 10 300 125 70 25 10 15 20 15 -1.8 - Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop Reverse recovery time Ω VGS = -5.0V, VDS = -25V Static drain-to-source on-state resistance Forward transconductance CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr A Conditions VGS = -10V, ID = -750mA pF VGS = 0V, VDS = -25V, f = 1.0 MHz ns VDD = -25V, ID = -1.0A, RGEN = 25Ω V ns VGS = 0V, ISD = -1.0A VGS = 0V, ISD = -1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% t(ON) td(ON) 0V OUTPUT VDD Doc.# DSFP-TP2510 C081413 tr td(OFF) 90% 10% RGEN 90% t(OFF) D.U.T. tf INPUT OUTPUT RL 90% 10% 2 VDD Supertex inc. www.supertex.com TP2510 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = -10V 6 4 2 0.9 0 50 100 0 150 0 -0.8 -1.6 VDS = -25V VGS(th) (normalized) ID (amperes) 2.0 RDS(ON) @ -10V, -0.75A 1.2 TA = -55°C -3 25°C -2 150°C -2.0 -4.0 -6.0 -8.0 1.6 1.0 1.2 0.8 0.4 0.4 -50 -10 0 50 VGS (volts) Capacitance vs. Drain-to-Source Voltage -10 0 150 Gate Drive Dynamic Characteristics f = 1MHz 142 pF -8.0 VGS (volts) 150 C (picofarads) 100 Tj (°C) 200 100 CISS VDS = -10V -6.0 VDS = -40V -4.0 71 pF 50 -2.0 COSS 0 0.8 V(th) @ -1mA 0.6 -1 0 -4.0 1.4 -4 0 -3.2 V(th) and RDS Variation with Temperature Transfer Characteristics -5 -2.4 ID (amperes) Tj (°C) RDS(ON) (normalized) -50 CRSS 0 -10 -20 -30 0 -40 VDS (volts) Doc.# DSFP-TP2510 C081413 0 1.0 2.0 QG (nanocoulombs) 3 Supertex inc. www.supertex.com TP2510 Typical Performance Curves (cont.) Output Characteristics -5.0 -4.0 -4.0 ID (amperes) ID (amperes) Saturation Characteristics -5.0 -3.0 VGS = -10V -2.0 -8V VGS = -10V -2.0 -8V -6V -1.0 -3.0 -6V -1.0 -4V 0 0 -3V -10 -20 -30 -40 0 -50 0 -2.0 -4.0 -6.0 -8.0 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.0 VDS = -25V TA = -55°C 0.4 TO-243AA TA = 25°C 0.3 PD (watts) 0.5 GFS (siemens) -4V -3V TA = 125°C 0.2 1.0 0.1 0 0 -0.5 -1.0 -1.5 -2.0 ID (amperes) 0 -2.5 Maximum Rated Safe Operating Area Thermal Resistance (normalized) 1.0 TO-243AA(pulsed) ID (amperes) -1.0 TO-243AA (DC) -0.1 Doc.# DSFP-TP2510 C081413 TA = 25°C -1.0 VDS (volts) 25 50 75 100 125 150 TA (°C) -10 -0.01 -0.1 0 -10 0.8 0.6 0.4 TO-243AA TA = 25°C PD = 1.6W 0.2 0 -100 Thermal Response Characteristics 0.001 0.01 0.1 1.0 10 tp (seconds) 4 Supertex inc. www.supertex.com TP2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TP2510 C081413 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com