TP2522 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TP2522
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
►► Low threshold (-2.4V max.)
►► High input impedance
►► Low input capacitance (125pF max.)
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Applications
►►
►►
►►
►►
►►
►►
►►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TP2522N8-G
Product Summary
Package Option
Packing
TO-243AA (SOT-89)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Typical Thermal Resistance
θja
TO-243AA (SOT-89)
133OC/W
-220V
VGS(th)
ID(ON)
-2.4V
-750mA
(max)
(max)
12Ω
(min)
DRAIN
SOURCE
DRAIN
GATE
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package
RDS(ON)
BVDSS/BVDGS
Pin Configuration
Absolute Maximum Ratings
Operating and storage temperature
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
TO-243AA (SOT-89)
Product Marking
TP5CW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TP2522
C081413
Supertex inc.
www.supertex.com
TP2522
Thermal Characteristics
ID
Package
Power Dissipation
(continuous)
ID
(pulsed)
@ TA = 25OC
-260mA
-2.0A
1.6W
TO-243AA (SOT-89)
†
IDR†
IDRM
-260mA
-2.0A
† ID (continuous) is limited by max rated Tj .
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-220
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
-
4.5
mV/OC
VGS = VDS, ID= -1.0mA
Gate body leakage
-
-
-100
nA
VGS = ± 20V, VDS = 0V
-
-10
μA
VGS = 0V, VDS = Max Rating
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.25
-0.7
-
-0.75
-2.1
-
10
15
8.0
12
∆VGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
∆RDS(ON)
-
A
-
-
1.7
%/ C
VGS = -10V, ID = -200mA
100
250
-
mmho
VDS = -25V, ID = -200mA
Input capacitance
-
75
125
COSS
Common source output capacitance
-
20
85
CRSS
Reverse transfer capacitance
-
10
35
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
15
Turn-off delay time
-
-
20
Fall time
-
-
15
Diode forward voltage drop
-
-
Reverse recovery time
-
300
VSD
trr
VGS = -4.5V, ID = -100mA
Change in RDS(ON) with temperature
CISS
tf
VGS = -10V, VDS = -25V
-
Forward transconductance
td(OFF)
VGS = -4.5V, VDS = -25V
Static drain-to-source on-state
resistance
GFS
tr
Conditions
Ω
O
VGS = -10V, ID = -200mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0 MHz
ns
VDD = -25V,
ID = -750mA,
RGEN = 25Ω
-1.8
V
VGS = 0V, ISD = -500mA
-
ns
VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-TP2522
C081413
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
TP2522
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
50
1.1
RDS(ON) (ohms)
BVDSS (normalized)
40
1.0
VGS = -4.5V
30
VGS = -10V
20
10
0.9
0
50
100
0
150
0
-0.5
-1.0
-2.5
-2.0
-2.5
Tj ( C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.5
VDS = -25V
1.2
-2.0
25 C
O
VGS(th) (normalized)
TA = -55OC
ID (amperes)
-1.5
ID (amperes)
O
-1.5
125OC
-1.0
RDS(ON) @ -10V, -0.2A
1.1
2.0
1.5
V(th) @ -1mA
1.0
1.0
0.9
-0.5
RDS(ON) (normalized)
-50
0.5
0.8
0
0
-2.0
-4.0
-6.0
-8.0
-10
-50
0
50
100
0
150
Tj ( C)
VGS (volts)
O
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
200
f = 1MHz
VDS = -10
-8.0
VGS (volts)
C (picofarads)
150
100
CISS
-6.0
VDS = -40
-4.0
200pF
50
-2.0
CRSS
0
0
73pF
COSS
-10
-20
-30
0
-40
VDS (volts)
Doc.# DSFP-TP2522
C081413
3
0
0.5
1.0
1.5
QG (nanocoulombs)
2.0
2.5
Supertex inc.
www.supertex.com
TP2522
Typical Performance Curves (cont.)
Output Characteristics
-2.5
VGS = -10V
-2.0
-1.6
-8V
ID (amperes)
ID (amperes)
Saturation Characteristics
-2.0
-1.5
-6V
-1.0
-0.5
VGS = -10V
-1.2
-8V
-6V
-0.8
-0.4
-4V
-4V
0
-3V
0
1.0
-10
-20
-30
-40
0
-50
-3V
0
-2.0
-6.0
-8.0
-10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
2.0
VDS = -25V
TO-243AA
0.8
0.6
PD (watts)
GFS (siemens)
-4.0
TA = -55OC
25OC
0.4
1.0
125OC
0.2
0
0
-0.4
-0.8
-1.2
-1.6
0
-2.0
0
25
50
ID (amperes)
75
100
125
150
TA (OC)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
-10
1.0
Thermal Resistance (normalized)
TA = 25OC
ID (amperes)
TO-243AA (pulsed)
-1.0
TO-243AA (DC)
-0.1
-0.01
-1.0
Doc.# DSFP-TP2522
C081413
-10
-100
VDS (volts)
0.8
0.6
0.2
0
0.001
-1000
TO-243AA
TA = 25OC
PD = 1.6W
0.4
0.01
0.1
1.0
10
tp(seconds)
4
Supertex inc.
www.supertex.com
TP2522
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Top View
Symbol
Dimensions
(mm)
Side View
A
b
b1
C
D
D1
E
E1
e
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TP2522
C081413
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com