Supertex inc. VP2110 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► The Supertex VP2110 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain Applications ►► ►► ►► ►► ►► ►► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number VP2110K1-G Product Summary Package Option Packing TO-236AB (SOT-23) 3000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage RDS(ON) BVDSS/BVDGS -100V θja TO-236AB (SOT-23) 203OC/W -500mA GATE O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package 12Ω SOURCE -55 C to +150OC Typical Thermal Resistance (min) DRAIN ±20V Operating and storage temperature ID(ON (max) Pin Configuration Absolute Maximum Ratings Doc.# DSFP-VP2110 B082313 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-236AB (SOT-23) Product Marking P1AW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-236AB (SOT-23) Supertex inc. www.supertex.com VP2110 Thermal Characteristics ID Package TO-236AB (SOT-23) (continuous)† ID Power Dissipation (pulsed) @TA = 25OC -120mA -400mA 0.36W IDR† IDRM -120mA -400mA Notes: † ID (continuous) is limited by max rated Tj. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-Source breakdown voltage -100 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - 5.8 6.5 IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V - - -10 µA IDSS Zero Gate voltage Drain current VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state Drain current -0.5 -1.0 - A VGS = -10V, VDS = -25V - 11 15 - 9.0 12 - 0.55 1.0 150 200 - ΔVGS(th) RDS(ON) ΔRDS(ON) Static Drain-to-Source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= -1.0mA Ω %/ C O VGS = -5.0V, ID = -100mA VGS = -10V, ID = -500mA VGS = -10V, ID = -500mA GFS Forward transductance CISS Input capacitance - 45 60 COSS Common Source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 5.0 9.0 Fall time - 4.0 8.0 Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA tr td(OFF) tf VSD trr mmho VDS = -25V, ID = -500mA pF ns VGS = 0V, VDS = -25V, f = 1.0MHz VDD = -25V, ID = -500mA, RGEN = 25Ω Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% t(ON) td(ON) 0V OUTPUT VDD Doc.# DSFP-VP2110 B082313 tr td(OFF) 90% 10% RGEN 90% t(OFF) D.U.T. tf INPUT OUTPUT RL 90% 10% 2 VDD Supertex inc. www.supertex.com VP2110 Typical Performance Curves -1.1 BVDSS Variation with Temperature On-Resistance vs. Drain Current 20 RDS(ON) (ohms) BVDSS (normalized) 16 -1.0 VGS = -5.0V 12 VGS = -10V 8 4 -1.0 0 50 100 0 0 150 -0.2 -0.4 -0.6 -0.8 -1.0 O Tj ( C) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 VDS = -25V 1.4 RDS(ON) @ -10V, 0.5A TA = -55OC 1.6 VGS(th) (normalized) ID (amperes) -0.6 -0.4 25OC -0.2 0 125OC 0 -2 -4 -6 VGS (volts) 1.2 1.2 1.0 0.8 V(th) @ 1.0mA 0.8 -8 0.6 -50 -10 0 100 0.4 0 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1.0MHz VDS = -10V VDS = -40V -6 VGS (volts) 75 C (picofarads) 50 RDS(ON) (normalized) -0.9 -50 50 101pF -4 CISS -2 25 35pF COSS CRSS 0 0 0 -10 -20 -30 -40 Doc.# DSFP-VP2110 B082313 0 1.0 2.0 QG (nanocoulombs) VDS (volts) 3 Supertex inc. www.supertex.com VP2110 Typical Performance Curves (cont.) Output Characteristics -2.0 Saturation Characteristics -1.0 -1.6 VGS = -10V -0.8 -1.2 VGS = -10V -9V -0.8 -8V -8V -0.6 ID (amperes) ID (amperes) -9V -7V -0.4 -6V -7V -6V -0.4 -5V -0.2 -5V -4V -4V 0 0 -10 -20 -30 -40 -3V 0 -2 -4 -6 -8 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 250 VDS = -25V 1.0 TA = -55OC 200 25OC 150 PD (watts) GFS (millisiemens) -0 -50 125OC 100 0.5 TO-236AB 50 0 0 -0.2 -0.4 -0.6 -0.8 0 0 -1.0 25 50 ID (amperes) 1.0 Thermal Resistance (normalized) TO-236AB (pulsed) ID (amperes) TO-236AB (DC) -0.1 -0.01 TA = 25OC Thermal Response Characteristics TO-236AB PD = 0.36W TA = 25OC 0.6 0.4 0.2 0.001 -100 VDS (volts) Doc.# DSFP-VP2110 B082313 150 0.8 0 -10 125 TA ( C) Maximum Rated Safe Operating Area -1.0 100 O -1.0 -0.001 -0.1 75 0.01 0.1 1.0 10 tp (seconds) 4 Supertex inc. www.supertex.com VP2110 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 L L1 0.20 † 0.95 BSC 1.90 BSC 0.50 0.60 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VP2110 B082313 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com