B G A 4 2 8 , M a rc h 2 0 0 2 BGA 428 BGA428 High Gain, Low Noise Amplifier MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-03-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA428 Data sheet Revision History: 2002-03-26 Previous Version: 2000-11-15 Page Subjects (major changes since last revision) 4 dot size for pin 1 package marking increased For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com BGA428 High Gain, Low Noise Amplifier BGA428 Features • • • • • • • 4 High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V SIEGET®-45 technology 5 6 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package (for example PGs) corresponds to pin 1 of device PGs 1 2 3 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling EHA07193 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA428 SOT363 PGs T0527 Data sheet 4 2002-03-26 BGA428 Maximum Ratings Parameter Symbol Value Unit VCC 4 V Itot 12 mA VOut 4 V Current into pin In IIN 0.5 mA Voltage at pin GS VGS 3.5 V Ptot 50 mW Tj 150 °C TOP -40 ..+85 °C Storage temperature range TSTG -65 ... +150 °C Thermal resistance: junction-soldering point Rth JS 220 K/W PIN 8 dBm Device voltage Total Device Current3) Voltage at pin Out Total power dissipation, Ts < 125°C 1) Junction temperature Operating temperature range Input power2) Notes: All Voltages refer to GND-Node 1) Ts is measured on the ground lead at the soldering point 2) Valid for a) ZL=50Ω and ZS=50Ω,=VCC=2.7V, VOUT=2.7V, VGS=0.0V, GND=0.0V and b) ZL=50Ω and ZS=50Ω,=VCC=0.0V, VOUT=0.0V, VGS=2.7V, GND=0.0V 3) Itot= Current into OUT + Current into VCC Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1) VCC=2.7V, Frequency=1.8GHz, unless otherwise specified Parameter Symbol Maximum available power gain GMA Noise figure (ZS=50Ω) min. typ. 20 max. Unit dB NF 1.4 dB Input power at 1dB gain compression P-1dB -19 dBm Input third order intercept point IIP3 -9 dBm Total device current Itot 8.2 mA Insertion loss in gain-step-mode Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩ LGS 13.5 dB Data sheet 5 2002-03-26 BGA428 Reference Plane VCTRL RCTRL=3kΩ GS Bias-T OUT Out GND Bias-T In IN VCC Reference Plane Top View 47pF 180pF 100nF 2.7V Fig.1: Test Circuit for Electrical Characteristics and S-Parameter 47pF 180pF VCTRL Supply 3kΩ GS Vcc 3.9nH RFin 150pF In BGA428 Out 0.9pF RFout GND Fig. 2: Application Circuit for 1850MHz Data sheet 6/9 2002-03-26 BGA428 S-Parameter at 2.7V (see Electrical Characteristics for conditions) Freq. [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.100 0.6756 -31.7 58.775 -19.6 0.0005 153.5 0.9491 -3.9 0.200 0.5936 -53.6 47.806 -43.1 0.0014 138.4 0.9327 -6.3 0.300 0.5150 -71.4 39.232 -59.5 0.0021 119.0 0.9174 -8.3 0.400 0.4587 -86.6 32.740 -71.8 0.0028 104.9 0.9035 -10.3 0.600 0.4004 -110.7 23.868 -89.6 0.0042 105.9 0.8807 -14.0 0.800 0.3743 -129.1 18.509 -103.2 0.0063 94.3 0.8593 -17.7 1.000 0.3743 -143.0 14.825 -114.5 0.0082 92.4 0.8352 -21.4 1.200 0.3816 -154.5 12.288 -124.7 0.0093 87.2 0.8116 -25.1 1.400 0.3922 -164.4 10.353 -134.2 0.0110 85.3 0.7865 -28.7 1.600 0.4086 -172.4 8.879 -143.2 0.0132 79.4 0.7597 -32.2 1.800 0.4265 -178.9 7.732 -151.4 0.0141 79.4 0.7309 -36.0 1.900 0.4314 178.8 7.214 -155.2 0.0146 76.1 0.7199 -37.5 2.000 0.4371 176.1 6.771 -159.1 0.0150 77.0 0.7097 -39.1 2.200 0.4505 171.2 5.976 -166.6 0.0169 75.2 0.6791 -42.3 2.400 0.4640 167.2 5.298 -173.5 0.0181 73.2 0.6593 -45.6 3.000 0.4935 155.9 3.935 167.0 0.0217 68.3 0.5925 -53.3 4.000 0.5181 141.2 2.605 139.2 0.0282 65.1 0.5284 -64.9 5.000 0.5202 126.9 1.911 113.6 0.0319 62.2 0.4829 -75.1 6.000 0.5128 110.0 1.479 89.9 0.0489 56.0 0.4323 -81.7 Application Circuit Characteristics (measured in test circuit specified in fig. 2) TA=25°C, Vcc=2.7V, Frequency=1.85GHz, unless otherwise specified Parameter Symbol typ. Unit |S21| 19 dB NF 1.4 dB Input Power at 1dB Gain Compression P-1dB -19 dBm Input Third Order Intercept Point IIP3 -9 dBm Total Device Current Itot 8.2 mA Insertion Loss in Gain-Step-Mode Vcc=0.0V, VCTRL=2.7V, RCTRL=3kΩ LGS 13.5 dB 2 Insertion power gain Noise Figure (ZS=50Ω) The following data refers to the application circuit given in fig. 2 Data sheet 7/9 2002-03-26 BGA428 2 2 Power Gain |S21| =f(f) V = 2.7V, V =2.7V CC Power Gain |S21| =f(f) V = 2.7V, V =2.7V Out CC 20 23 15 22 10 21 5 Insertion Gain [dB] Insertion Gain [dB] Out 0 −5 20 19 18 −10 17 −15 16 −20 −25 0 1 2 3 4 5 15 1.7 6 1.8 Frequency [GHz] 2 Off−Gain |S | =f(V ) 21 CTRL V = 0.0V, V =0.0V,R CC Out 1.9 2 2.1 2.5 3 Frequency [GHz] Matching |S |,|S |=f(f) 11 22 V = 2.7V, V =2.7V =2.7kΩ CC CTRL −10 Out 0 S22 −11 −5 −12 1800MHz S 11 −10 −14 |S11|, |S22| [dB] Insertion Gain [dB] −13 1990MHz −15 −16 −15 −20 −17 −18 −25 −19 −20 −30 2 2.2 2.4 2.6 V CTRL Data sheet 2.8 3 3.2 1 1.5 2 Frequency [GHz] [V] 8/9 2002-03-26 BGA428 Input Compression Point P−1dB=f(f) Device Current I=f(ϑ) V =2.7V, V =2.7V CC −16.5 Out 9 8.8 −17 8.4 Device Current [mA] Input Compression Point [dBm] 8.6 −17.5 VCC=2.7V −18 −18.5 VCC=2.85V 8.2 8 7.8 7.6 −19 VCC=2.4V 7.4 −19.5 7.2 −20 1800 1850 1900 1950 7 −20 2000 0 Frequency [MHz] 20 40 60 80 Temperature [°C] Package Outline 2 Insertion Gain |S | =f(ϑ) 21 VCC=2.7V, VOut=2.7V 2 ±0.2 25 0.9 ±0.1 B 0.2 +0.1 0.1 max A 24 5 4 1 2 3 23 +0.2 acc. to DIN 6784 ±0.1 6 22 |S21|2 [dB] 21 f=1800MHz 1.3 ±0.1 19 0.15 +0.1 -0.05 0.65 ±0.05 20 0.20 M B 0.20 M A GPS05604 f=1990MHz 18 17 16 15 −20 0 20 40 60 80 Temperature [°C] Data sheet 9/9 2002-03-26