BUZ 21 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G D Pin 3 S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 Ω TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A 21 IDpuls Pulsed drain current TC = 25 °C 84 Avalanche current,limited by Tjmax IAR 21 Avalanche energy,periodic limited by Tjmax EAR 11.5 Avalanche energy, single pulse EAS mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 °C 100 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 °C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 100 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS µA VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 10.5 A Semiconductor Group nA - 2 0.075 0.085 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 10.5 A Input capacitance 8 pF - 1200 1500 - 320 580 - 160 260 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 14 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 25 40 - 110 170 - 210 270 - 100 130 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 84 V 1.35 1.7 trr ns - 150 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 21 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 42 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.58 - 01/97 BUZ 21 L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 80 22 A W Ptot ID 60 18 16 14 50 12 40 10 30 8 6 20 4 10 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 160 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 1 A ID °C TC K/W ZthJC tp = 22.0µs 10 2 10 0 /I D S = RD 10 o S( VD 100 µs n) 1 ms 1 10 -1 D = 0.50 0.20 10 ms 0.10 10 0 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 0 10 1 V 10 10 2 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 01/97 0 BUZ 21 L Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs , Tj = 25 °C 50 A ID 0.26 Ptot = 75W lk a Ω j g h i b c d f 0.22 VGS [V] a 3.0 40 b 3.5 c 4.0 d 4.5 30 e 5.0 f 5.5 25 d g 6.0 h 6.5 i 7.0 j 8.0 e 35 20 c 15 k 9.0 l 10.0 RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 e 0.08 g f 0.06 10 0.04 b 5 0.02 a 0 0.0 1.0 2.0 3.0 4.0 5.0 V 0.00 0 7.0 h i k j VGS [V] = a 3.0 3.5 4 b 4.0 c 4.5 8 d 5.0 12 e f 5.5 6.0 16 20 g 6.5 24 h i 7.0 8.0 28 VDS j 9.0 k 10.0 32 A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 60 20 A S 50 ID 40 ID gfs 45 16 14 40 12 35 30 10 25 8 20 6 15 4 10 2 5 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0 0 10 20 30 40 A 60 ID 6 01/97 BUZ 21 L Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 10.5 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.28 4.6 Ω V 0.24 4.0 RDS (on)0.22 VGS(th) 0.20 3.6 3.2 0.18 2.8 0.16 2.4 0.14 98% 98% typ 0.12 0.10 2.0 typ 1.6 2% 0.08 1.2 0.06 0.8 0.04 0.4 0.02 0.00 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss Crss 10 -1 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 01/97 3.0 BUZ 21 L Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 25 V RGS = 25 Ω, L = 340 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 32 A 16 110 mJ EAS V 90 VGS 80 70 12 10 60 0,2 VDS max 8 0,8 VDS max 50 6 40 30 4 20 2 10 0 20 40 60 80 100 120 °C 160 Tj 0 0 10 20 30 40 50 60 70 80 nC 100 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 01/97