INFINEON Q62702

BAT 62-07W
Silicon Schottky Diode
3
• Low barrier diode for detectors up to GHz
4
frequencies
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
BAT 62-07W
62s
1=C1
Q62702-A1198
2=C2
Package
3=A2
4=A1
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
40
V
Forward current
IF
20
mA
Total power dissipation, T S = 103 °C
Ptot
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ...+150
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
Semiconductor Group
Semiconductor Group
11
RthJA
≤ 630
RthJS
≤ 470
K/W
Sep-07-1998
1998-11-01
BAT 62-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
10
µA
VF
-
0.58
1
V
CT
-
0.35
0.6
pF
CC
-
0.1
-
R0
-
225
-
kΩ
Ls
-
2
-
nH
DC characteristics
Reverse current
VR = 40 V
Forward voltage
I F = 2 mA
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Case capacitance
f = 1 MHz
Differential resistance
VR = 0 , f = 10 kHz
Series inductance chip to ground
Semiconductor Group
Semiconductor Group
22
Sep-07-1998
1998-11-01
BAT 62-07W
Forward current IF = f (TA*;TS)
Forward current IF = f (VF )
* mounted on alumina
TA = parameter
10 4
25
uA
mA
TS
10 3
T A = 25°C
T A = 85°C
T A = 125°C
T A = -40°C
IF
IF
TA
15
10
10 2
5
0
0
20
40
60
80
100
120 °C
10 1
0.0
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TA,TS
1.6 V 1.9
VF
Permissible Pulse Load
Permissiple pulse load IFmax/IFDC = f(tp)
I Fmax / I FDC = f(tp)
10 1
IFmax / IFDC
10 3
RthJS
K/W
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
Semiconductor Group
Semiconductor Group
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Sep-07-1998
1998-11-01
BAT 62-07W
Diode capacitance CT = f (V R)
f = 1MHz
Reverse current IR = f (VR)
T A = Parameter
10 3
0.6
uA
pF
T A = 125°C
0.4
T A = 85°C
IR
CT
10
2
10 1
0.3
0.2
T A = 25°C
10 0
0.1
0.0
0
5
10
15
V
20
10 -1
0
30
5
10
15
20
25
30
VR
V
40
VR
Rectifier voltage Vout = f (Vin)
f = 900 MHz
RL = parameter in kΩ
10 4
mV
10 3
VO
10 2
Testcircuit
10 1
D.U.T
10 0
1000
500
200
100
50
20
10 -1
10 -2
10 -3 0
10
VI
R IN
50Ω
CL
R L V0
1nF
RL=10
10
1
10
2
10
3
mV 10
4
VI
Semiconductor Group
Semiconductor Group
44
Sep-07-1998
1998-11-01