BB 545 Silicon Tuning Diode Preliminary data • For tuning UHF and VHF TV Tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 545 white U 1=K SOD-323 Q62702-B583 2=A Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 30 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 °C Thermal Resistance Junction ambient 1) RthJA ≤ 450 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BB 545 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 30 V, TA = 25 °C - - 10 VR = 30 V, TA = 85 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 18.5 20 21.5 VR = 2 V, f = 1 MHz 13.2 14.8 16.4 VR = 25 V, f = 1 MHz 1.85 2.07 2.28 VR = 28 V, f = 1 MHz 1.8 2 2.2 Capacitance ratio CT2/CT25 VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio 7.2 8.1 9 10 11 ∆CT/CT VR = 1 ... 28 V, f = 1 MHz Series resistance 6.3 CT1/CT28 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) - % - - 2.5 Ω rs VR = 3 V, f = 470 MHz Series inductance Ls Semiconductor Group 2 - 0.6 - - 2 - nH Jan-31-1997 BB 545 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 22 pF CT 1/°C 18 TCc 10 -2 16 14 12 10 -3 10 8 6 10 -4 4 2 0 0 5 10 15 20 V 10 -5 0 10 30 10 1 V VR VR Reverse current IR = f (VR) Reverse current IR = f (TA) VR = 28V TA = Parameter 10 4 10 4 pA IR pA 85°C 10 3 IR 10 3 10 2 25°C 10 1 10 2 10 0 10 -1 0 10 10 1 10 1 -30 V VR Semiconductor Group 3 -10 10 30 50 70 °C TA 100 Jan-31-1997