INFINEON BSP171P_07

BSP171P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
V DS
-60
V
R DS(on),max
0.3
Ω
ID
-1.9
A
• Logic level
• Avalanche rated
• dv /dt rated
PG-SOT-223
• Pb-free lead plating; RoHS compliant
Type
Package
Tape and Reel Information
Marking
BSP 171 P
PG-SOT-223
L6327: 1000 pcs/reel
171P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
steady state
Continuous drain current
ID
T A=25 °C1)
-1.9
T A=70 °C1)
-1.5
-7.6
A
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=-1.9 A, R GS=25 Ω
70
mJ
Reverse diode dv /dt
dv /dt
I D=-1.9 A,
V DS=-48 V,
di /dt =-200 A/µs,
T j,max=150 °C
-6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C1)
V
1.8
W
-55 ... 150
°C
55/150/56
IEC climatic category; DIN IEC 68-1
Rev 2.4
±20
page 1
2007-02-08
BSP171P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
25
minimal footprint,
steady state
-
-
110
6 cm2 cooling area1),
steady state
-
-
70
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
Thermal resistance,
junction - ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,
I D=-460 µA
-1
-1.5
-2
Zero gate voltage drain current
I DSS
V DS=-60 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-60 V, V GS=0 V,
T j=125 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5 V,
I D=-1.5 A
-
0.3
0.45
Ω
V GS=-10 V,
I D=-1.9 A
-
0.21
0.3
1.4
2.7
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-1.5 A
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 2.4
page 2
2007-02-08
BSP171P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
365
460
-
105
135
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
40
55
Turn-on delay time
t d(on)
-
6
8
Rise time
tr
-
25
33
Turn-off delay time
t d(off)
-
208
276
Fall time
tf
-
87
130
Gate to source charge
Q gs
-
-1.2
-1.6
Gate to drain charge
Q gd
-
-5
-7
Gate charge total
Qg
-
-13
-20
Gate plateau voltage
V plateau
-
-3
-
Output charge
Q oss
-
-5
-7
-
-
-1.9
-
-
-7.6
-
-0.84
-1.1
V
-
80
120
ns
-
-125
-190
nC
V GS=0 V,
V DS=-25 V, f =1 MHz
V DD=-25 V,
V GS=-10 V,
I D=-1.9 A, R G=6 Ω
pF
ns
Gate Charge Characteristics2)
V DD=-48 V, I D=1.9 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
T A=25 °C
V GS=0 V, I F=1.9 A,
T j=25 °C
A
V R=-30 V, I F=|I S|,
di F/dt =100 A/µs
Reverse recovery charge
2)
Q rr
See figure 16 for gate charge parameter definition
Rev 2.4
page 3
2007-02-08
BSP171P
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); |V GS|≥10 V
1.5
1.5
-I D [A]
2
P tot [W]
2
1
1
0.5
0.5
0
0
0
40
80
120
0
160
40
T A [°C]
80
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C1); D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
102
10 µs
100 µs
1 ms
0.5
10 ms
0.2
100
101
100 ms
-I D [A]
Z thJS [K/W]
0.1
limited by on-state
resistance
10-1
DC
0.02
100
10-2
0.01
single pulse
10-1
0.1
1
10
100
-V DS [V]
Rev 2.4
0.05
10-5
10-4
10-3
10-2
10-1
100
101
102
t p [s]
page 4
2007-02-08
BSP171P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
5
-5.5 V
600
-4.5 V
-4 V
-5 V
-3 V
-10 V
500
4
-3.5 V
400
R DS(on) [mΩ]
-I D [A]
3
-3.5 V
2
-4 V
-4.5 V
300
-5 V
-5.5 V
-10 V
200
-3 V
1
100
-2.5 V
0
0
0
1
2
3
4
0
5
1
-V DS [V]
2
3
4
3
4
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
6
5
5
4
4
g fs [S]
-I D [A]
3
3
2
2
1
1
C °125
C °25
0
0
0
1
2
3
4
5
Rev 2.4
0
1
2
-I D [A]
-V GS [V]
page 5
2007-02-08
BSP171P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-460 µA
3
500
2.5
400
98 %
300
-V GS(th) [V]
R DS(on) [mΩ]
2
200
typ.
max.
1.5
typ.
min.
1
100
0.5
0
0
-60
-20
20
60
100
140
-60
180
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
103
101
25 °C, typ
150 °C, typ
150 °C, 98%
Ciss
100
25 °C, 98%
I F [A]
C [pF]
Coss
102
Crss
10-1
101
10-2
0
10
20
30
-V DS [V]
Rev 2.4
0
0.5
1
1.5
-V SD [V]
page 6
2007-02-08
BSP171P
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-1.9 A pulsed
parameter: T j(start)
parameter: V DD
10
12
0.5 VBR(DSS)
10
C °25
8
0.2 VBR(DSS)
V GS [V]
-I AV [A]
0.8 VBR(DSS)
C °100
1
C °125
6
4
2
0.1
0
1
10
100
1000
0
5
10
15
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-1 mA
70
V GS
Qg
65
-V BR(DSS) [V]
60
55
V g s(th)
50
45
Q g (th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev 2.4
page 7
2007-02-08
BSP171P
Package Outline
SOT-223: Outline
Footprint
Packaging
Tape
Dimensions in mm
Rev 2.4
page 8
2007-02-08
BSP171P
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 2.4
page 9
2007-02-08