BAR 64 ... W Silicon PIN Diode 3 • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W Type Marking Ordering Code Pin Configuration Package BAR 64-04W PPs Q62702-A1264 1 = A1 2 = C2 3=C1/A2 SOT-323 BAR 64-05W PRs Q62702-A1265 1 = A1 2 = C2 3 = C1/2 BAR 64-06W PSs Q62702-A1266 1 = C1 2 = C2 3 = A1/2 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 200 V Forward current IF 100 mA Total power dissipation, T S ≤ 115 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top - 55 ...+150 Storage temperature Tstg - 55 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 300 RthJS ≤ 140 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 64 ... W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 200 - - V IR - - 50 µA VF - - 1.1 mV CT - 0.23 0.35 pF DC characteristics Breakdown voltage V(BR) I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 50 mA AC characteristics Diode capacitance VR = 20 V, f = 1 MHz Forward resistance Ω rf IF = 1 mA, f = 100 MHz - 12.5 20 IF = 10 mA, f = 100 MHz - 2.1 2.8 IF = 100 mA, f = 100 MHz - 0.85 1.35 τrr - 1.55 - µs Ls - 1.2 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAR 64 ... W Forward current IF = f (TA*;TS) * mounted on alumina 140 5 mA 100 IF TS 80 TA 60 40 20 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp 33 Sep-04-1998 1998-11-01 BAR 64 ... W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f(IF) f = 100MHz 10 3 0.6 Ohm pF 0.4 RF CT 10 2 10 1 0.3 0.2 10 0 0.1 0.0 0 5 10 15 20 V 10 -1 -2 10 30 10 -1 10 0 10 1 10 VR 2 mA 10 3 IF Forward current IF = f (V F) Intermodulation intersept point T A = parameter IP3 = f (I F) f = parameter 10 3 10 2 5 mA f=900MHz f=1800MHz IP3 IF 10 2 10 1 dBm 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 10 1 -1 10 1.0 VF Semiconductor Group Semiconductor Group 10 0 mA 10 1 IF 44 Sep-04-1998 1998-11-01