PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 Features 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing -25 • Broadband internal matching • Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 dB - Efficiency = 29% • Typical CW performance, 760 MHz, 28 V - Output power at P–1dB = 60 W - Gain = 19 dB - Efficiency = 72% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power • Pb-free and RoHS-compliant 55 50 45 -35 40 Efficiency 35 -40 30 IM3 25 -45 20 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -30 15 -50 ACPR 10 -55 5 29 31 33 35 37 39 41 43 45 47 Output Power, avg. (dBm ) RF Characteristics WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, ƒ = 760 MHz Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD — –37 — dBc Gain Gps — 19 — dB Drain Efficiency ηD — 29 — % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 60 W PEP, ƒ = 760 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19.5 — dB Drain Efficiency ηD 46.5 48 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.15 — V On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 600 mA VGS 2.0 2.3 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 219 W 1.25 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.8 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA070601E V4 H-36265-2 Thermally-enhanced, slotted flange, single-ended Tray PTFA070601E PTFA070601F V4 H-37265-2 Thermally-enhanced, earless flange, single-ended Tray PTFA070601F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Power Sweep, CW Conditions Broadband Performance VDD = 28 V, IDQ = 600 mA, ƒ = 760 MHz VDD = 28 V, IDQ = 600 mA, POUT = 45 dBm TCASE = -10°C Gain (dB) 20 65 45 55 19 45 18 35 17 16 25 Efficiency 15 15 36 38 40 42 44 46 48 -4 -8 40 -10 35 -14 25 -18 720 730 750 760 -20 770 Broadband Performance (at P–1dB) VDD = 28 V, IDQ = 600 mA -20 65 -25 60 IDQ = 700 mA Gain (dB), Efficiency (%) Intermodulation Distortion (dBc) 740 Frequency (MHz) IM3 vs. Output Power at Selected Biases VDD = 28 V, ƒ = 760 MHz, tone spacing = 1 MHz -30 IDQ = 600 mA -40 -45 -50 IDQ = 450 mA -55 -16 Gain 20 Output Power (dBm) -35 -12 Return Loss 30 15 710 50 -6 Efficiency Input Return Loss (dB) Gain 50 -60 51 Efficiency 55 50 50 45 49 40 Output Power 35 48 30 25 Gain 47 Output Power (dBm) 21 TCASE = 80°C 75 Gain (dB), Efficiency (%) TCASE = 25°C Drain Efficiency (%) 22 20 -65 29 31 33 35 37 39 41 43 45 15 710 47 Output Power, Avg. (dBm) Data Sheet 720 730 740 750 760 46 770 Frequency (MHz) 3 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Output Power (P–1dB) vs. Drain Voltage VDD = 28 V, IDQ = 600 mA, ƒ = 760 MHz, tone spacing = 1 MHz IDQ = 600 mA, ƒ = 760 MHz 49.5 Efficiency IM3 49 40 -35 30 -45 IM5 20 -55 IM7 10 -65 -75 Output Power (dBm) -25 50 Drain Efficiency (%) Intermodulation Distortion (dBc) -15 30 32 34 36 38 40 42 44 48 47.5 47 46.5 0 28 48.5 22 46 Output Power, Avg. (dBm) 24 26 28 30 32 34 Drain Voltage (V) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 0.8 A Normalized Bias Voltage (V) 1.03 2.4 A 1.02 6.0 A 1.01 12.0 A 1.00 18.0 A 0.99 24.0 A 0.98 32.0 A 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution R -- Broadband Circuit Impedance RA T O RD G E NE MHz R jX R jX 700 5.32 –4.82 3.14 0.61 720 5.07 –4.40 3.01 1.02 740 4.84 –3.91 2.88 1.44 760 4.69 –3.40 2.79 1.90 800 4.55 –2.39 2.69 2.82 0.2 0.1 0 .0 Z Source 800 MHz 700 MHz 0.1 W <--- Z Load Ω 700 MHz A VE Z Source Ω Z Load 800 MHz W ARD LOA D THS T O L E NG - W AV E LE NGTH S T OW A S 0.1 Z Load G Frequency 0.2 D Z Source 0. 2 See next page for circuit information Data Sheet 5 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 5.1 V R6 10 V C4 10µF 35V C5 0.1µF L1 VDD R7 5.1K C6 0.1µF C7 0.01µF C8 75pF l6 R8 10 V C9 75pF J1 l1 C15 0.1µF C14 10µF 50V C13 1µF C12 75pF l7 C24 100pF DUT l2 l3 l4 C10 4.7pF C11 5.6pF C16 10µF 50V l9 l5 l 10 l 11 J2 C23 1.7pF C22 7.0pF l8 l 13 l 12 L2 C17 75pF C18 1µF C19 10µF 50V C20 0.1µF C21 10µF 50V Reference circuit schematic diagram for ƒ = 760 MHz Circuit Assembly Information DUT PCB PTFA070601E or PTFA070601F 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 760 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 l13 Data Sheet 0.056 0.091 0.016 0.011 0.050 0.128 0.123 0.146 0.005 0.075 0.026 0.022 λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 7.5 Ω λ, 66.5 Ω λ, 52.2 Ω λ, 11.0 Ω λ, 11.0 Ω λ, 37.8 Ω λ, 37.8 Ω λ, 50.0 Ω 12.19 x 1.37 19.81 x 1.37 3.56 x 1.37 2.29 x 1.37 9.58 x 16.21 28.45 x 0.79 26.67 x 1.27 28.58 x 10.54 0.97 x 10.54 15.82 x 2.16 5.56 x 2.16 4.70 x 1.37 6 of 10 0.480 0.780 0.140 0.090 0.377 1.120 1.050 1.125 0.038 0.623 0.219 0.185 x x x x x x x x x x x x 0.054 0.054 0.054 0.054 0.638 0.031 0.050 0.415 0.415 0.085 0.085 0.054 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Reference Circuit (cont.) R 3 C3 R4 C4 C5 C8 C7 C6 R2 C2 R6 R7 R1 C1 C16 VDD VDD QQ1 R5 C12 L1 C13 C14 Q1 C15 C22 R8 C24 C11 RF_OUT RF_IN C9 C23 C10 C20 C17 VDD C18 L2 C19 C21 a070601 ef - v4_ cd_4- 20 - 09 Reference circuit schematic diagram for ƒ = 760 MHz Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6, C15, C20 C7 C8, C9, C12, C17 C10 C11 C13, C18 C14, C16, C19, C21 C22 C23 C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 0.01 µF Ceramic capacitor, 75 pF Ceramic capacitor, 4.7 pF Ceramic capacitor, 5.6 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 7.0 pF Ceramic capacitor, 1.7 pF Ceramic capacitor, 100 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2k ohms Chip resistor 1.3k ohms Chip resistor 2k ohms Potentiometer 2k ohms Chip resistor 5.1k ohms Chip resistor 10 ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 200B 103 100B 750 100B 4R7 100B 5R6 920C105 TPSE106K050R0400 100B 7R0 100B 1R7 100B 101 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 45° X 2.03 [.080] 6. 2X 7.11 [.280] ALL FOUR CORNERS 2.66±.51 [.105±.020] D S FLANGE 9.78 [.385] 3.05 [.120] LID 10.16±.25 [.400±.010] CL G 2X R1.52 [R.060] 4X R0.63 [R.025] MAX SPH 1.57 [.062] 15.49±.51 [.610±.020] C66065-A2326-C001-01-0027 H-36265-2.dwg CL 4X R1.52 [R.060] 15.23 [.600] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] 0.0381 [.0015] -A1.02 [.040] 20.31 [.800] 6. Diagram Notes—unless otherwise specified: Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 6. Exposed metal plane on top and bottom of ceramic insulator. 7. All tolerances ± 0.127 [.005] unless specified otherwise. 8 of 10 Rev. 01, 2009-04-16 PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 2X 7.11 [.280] D FLANGE 10.16 [.400] ALL FOUR CORNERS 6. 45° X 2.03 [.080] 2.66±.51 [.105±.020] LID 10.16±.25 [.400±.010] CL 15.49±.51 [.610±.020] G 4X R0.63 [R.025] MAX C66065-A2327-C001-01-0027 H-37265-2.dwg CL 10.16±.25 [.400±.010] SPH 1.57 [.062] 3.61±.38 [.142±.015] 0.0381 [.0015] -A1.02 [.040] S 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 6. Exposed metal plane on top and bottom of ceramic insulator. 7. All tolerances ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 01, 2009-04-16 PTFA0706010E/F Confidential, Limited Internal Distribution Revision History: 2009-04-16 None Previous Version: Page Data Sheet Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-04-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 01, 2009-04-16