IDW100E60 Fast Switching EmCon Diode A Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/emcon/ C PG-TO-247-3 Applications: • Welding • Motor drives Type VRRM IF VF,Tj=25°C Tj,max Marking Package IDW100E60 600V 100A 1.65V 175°C D100E60 PG-TO-247-3 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current IF Value 600 V A TC = 25°C 150 TC = 90°C 104 TC = 100°C 96 Surge non repetitive forward current Unit IFSM 400 A IFRM 300 A TC = 25°C, tp = 10 ms, sine halfwave Maximum repetitive forward current TC = 25°C, tp limited by tj,max, D = 0.5 W Ptot Power dissipation TC = 25°C 375 TC = 90°C 212 TC = 100°C 198 Operating junction and storage temperature Tj, Tstg Soldering temperature 1.6mm (0.063 in.) from case for 10 s TS Power Semiconductors 1 -55…+175 °C 260 °C Rev. 2.1 Nov 09 IDW100E60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.40 K/W RthJA 40 Characteristic Thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j = 25° C - 1.65 2.0 T j = 17 5° C - 1.65 - T j = 25° C - - 40 T j = 17 5° C - - 1000 Unit Static Characteristic Collector-emitter breakdown voltage VRRM IR=0.25mA Diode forward voltage VF I F = 100A Reverse leakage current IR V µA V R = 6 00V Dynamic Electrical Characteristics Diode reverse recovery time trr T j = 25° C - 120 - ns Diode reverse recovery charge Qrr V R = 4 00V, - 3.6 - µC Diode peak reverse recovery current Irr I F = 100A , - 49.5 - A Diode peak rate of fall of reverse recovery current during t b dI r r / dt dI F / dt= 120 0A / µs - 750 - A/µs Diode reverse recovery time trr T j = 12 5° C - 168 - ns Diode reverse recovery charge Qrrm V R = 4 00V, - 5.8 - µC Diode peak reverse recovery current Irr I F = 100A , - 61.6 - A Diode peak rate of fall of reverse recovery current during t b dI r r / dt dI F / dt= 120 0A / µs - 705 - A/µs Diode reverse recovery time trr T j = 17 5° C - 200 - ns Diode reverse recovery charge Qrrm V R = 4 00V, - 7.8 - µC Diode peak reverse recovery current Irr I F = 100A , - 67.0 - A Diode peak rate of fall of reverse recovery current during t b dI r r / dt dI F / dt= 120 0A / µs - 650 - A/µs Power Semiconductors 2 Rev. 2.1 Nov 09 IDW100E60 150A 300W 120A IF, FORWARD CURRENT Ptot, POWER DISSIPATION 350W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 1. Power dissipation as a function of case temperature (Tj ≤ 175°C) VF, FORWARD VOLTAGE IF, FORWARD CURRENT 175°C 200A 150A 100A 125°C TC, CASE TEMPERATURE Figure 2. Diode forward current as a function of case temperature (Tj ≤ 175°C) TJ=25°C 250A 75°C 2.0V IF=200A 1.5V 100A 50A 1.0V 0.5V 50A 0A 0V 1V 0.0V 0°C 2V VF, FORWARD VOLTAGE Figure 3. Typical diode forward current as a function of forward voltage Power Semiconductors 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 4. Typical diode forward voltage as a function of junction temperature 3 Rev. 2.1 Nov 09 IDW100E60 150ns 100ns TJ=25°C 50ns 1000A/µs Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 200ns 0ns 500A/µs 8µC TJ=175°C 6µC 5µC 4µC TJ=25°C 3µC 2µC 1µC 0µC 500A/µs 1500A/µs diF/dt, DIODE CURRENT SLOPE Figure 5. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=100A, Dynamic test circuit in Figure E) TJ=175°C 7µC 1000A/µs 1500A/µs diF/dt, DIODE CURRENT SLOPE Figure 6. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 100A, Dynamic test circuit in Figure E) -1200A/µs TJ=175°C -1000A/µs 60A 50A TJ=25°C 40A 30A 20A 10A 0A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 70A 500A/µs 1000A/µs 1500A/µs diF/dt, DIODE CURRENT SLOPE Figure 7. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 100A, Dynamic test circuit in Figure E) Power Semiconductors -800A/µs TJ=25°C -600A/µs -400A/µs -200A/µs TJ=175°C 0A/µs 500A/µs 1000A/µs 1500A/µs diF/dt, DIODE CURRENT SLOPE Figure 8. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=100A, Dynamic test circuit in Figure E) 4 Rev. 2.1 Nov 09 ZthJC, TRANSIENT THERMAL RESISTANCE IDW100E60 D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 0.01 -2 10 K/W single pulse 1µs R,(K/W) 0.03814 0.17186 0.09381 0.07453 0.02165 τ, (s) 0.3724 0.07367 6.877 E-3 4.143 E-4 4.145 E-5 R1 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 10µs 100µs 1ms 10ms 100ms 1s tP, PULSE WIDTH Figure 9. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 5 Rev. 2.1 Nov 09 IDW100E60 Power Semiconductors 6 Rev. 2.1 Nov 09 IDW100E60 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 7 Rev. 2.1 Nov 09