Product Brief Features 650V SiC thinQ!™ Generation 5 diodes Your way is our way: improve efficiency and solution costs ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Vbr at 650V Improved Figure of Merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating 10 years manufacturing of SiC diodes Benefits Higher safety margin against Overvoltage; best match with CoolMOS™ 650V products Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant High quality know-how and capacity in SiC diode manufacture 98.5 Efficiency [%] a) 98.0 Generation 5 Generation 3 Generation 2 97.5 97.0 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Output Power [% nominal] 0.15 b) Generation 5 Generation 3 Generation 2 Efficiency Difference [%] 0.10 Experimental results 0.05 Efficiency comparison among the three IFX generations of 8A SiC diodes a) Absolute values b) Referred to thinQ!™ Gen 5 0.00 - 0.05 (CCM PFC, High line, Pout max=1800 W, fSW=65 kHz, THS=60°C, MOSFET: IPW60R075CP) - 0.10 - 0.15 10% 20% 30% 40% 50% 60% 70% Output Power [% nominal] www.infineon.com/sic 80% 90% 100% Applications Telecom/Server SMPS Solar/UPS PC Silverbox LED/LCD TV Motor Drives HID lighting Product Brief 650V SiC thinQ!™ Generation 5 diodes Your way is our way: improve efficiency and solution costs 60 d=350µm@175°C d=110µm@175°C 50 40 IF [A/mm2] Infineon: leading technology An important achievement with Gen 5 is the industrial implementation of a thinning process which allows reducing the wafer thickness to almost 1/3 while maintaining the proven quality and yield levels. The thinning reduces the resistive contribution of the substrate (see picture on the right) and one of its most striking benefit is a consistent improvement of the surge current robustness, now at comparable level or even higher (for IF <10A) than for G2 in spite of a smaller chip size. In combination with our proprietary diffusion soldering, the reduced thickness further contributes to decrease the overall thermal resistance in the package. The pictures below show the temperature increase at the junction under given forward current conditions for the same device area: G5 30 G2-G3 20 10 0 Left: 350µm chip with 60µm soft solder; middle: 350µm chip with diff. solder; right: 110µm chip with diff. solder 0 2 4 VF [V] 6 8 Planned product portfolio TO-220 R2L TO-247 New! D2PAK R2L New! ThinPAK 8x8 New! IDK02G65C5 IDK03G65C5 IDK04G65C5 IDK05G65C5 IDK06G65C5 IDK08G65C5 IDK09G65C5 IDK10G65C5 IDK12G65C5 IDL02G65C5 650V 2A 3A 4A 5A 6A 8A 9A 10A 12A 16A 20A 30A 40A IDH02G65C5 IDH03G65C5 IDH04G65C5 IDH05G65C5 IDH06G65C5 IDH08G65C5 IDH09G65C5 IDH10G65C5 IDH12G65C5 IDH16G65C5 IDH20G65C5 IDW10G65C5 IDW12G65C5 IDW16G65C5 IDW20G65C5 IDW30G65C5 IDW40G65C5 IDL04G65C5 IDL06G65C5 IDL08G65C5 IDL10G65C5 IDL12G65C5 Please check the single product status/availability on: www.infineon.com/sic Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9677-G1-X-7600-DB2012-0016 Date: 09 / 2012 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.