INFINEON IDK03G65C5

Product Brief
Features
650V SiC thinQ!™ Generation 5 diodes
Your way is our way: improve efficiency and solution costs
ThinQ!™ Generation 5 represents Infineon’s leading edge technology for
SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering
process, already introduced with G3, is now combined with a new, more
compact design and thin wafer technology. The result is a new family of
products showing improved efficiency over all load conditions, coming from
both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
„„
Vbr at 650V
„„
Improved Figure of Merit (Qc x Vf)
„„
No reverse recovery charge
„„
Soft switching reverse
recovery waveform
„„
Temperature independent
switching behavior
„„
High operating temperature
(Tj max 175°C)
„„
Improved surge capability
„„
Pb-free lead plating
„„
10 years manufacturing of SiC diodes
Benefits
„„
Higher safety margin against
Overvoltage; best match with
CoolMOS™ 650V products
„„
Improved efficiency over all
load conditions
„„
Increased efficiency compared to
Silicon Diode alternatives
„„
Reduced EMI compared to snappier
Silicon diode reverse recovery
waveform
„„
Highly stable switching performance
„„
Reduced cooling requirements
„„
Reduced risks of thermal runaway
„„
RoHS compliant
„„
High quality know-how and capacity
in SiC diode manufacture
98.5
Efficiency [%]
a)
98.0
Generation 5
Generation 3
Generation 2
97.5
97.0
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
Output Power [% nominal]
0.15
b)
Generation 5
Generation 3
Generation 2
Efficiency Difference [%]
0.10
Experimental results
0.05
Efficiency comparison among the three
IFX generations of 8A SiC diodes
a) Absolute values
b) Referred to thinQ!™ Gen 5
0.00
- 0.05
(CCM PFC, High line, Pout max=1800 W,
fSW=65 kHz, THS=60°C,
MOSFET: IPW60R075CP)
- 0.10
- 0.15
10%
20%
30%
40%
50%
60%
70%
Output Power [% nominal]
www.infineon.com/sic
80%
90%
100%
Applications
„„
Telecom/Server SMPS
„„
Solar/UPS
„„
PC Silverbox
„„
LED/LCD TV
„„
Motor Drives
„„
HID lighting
Product Brief
650V SiC thinQ!™ Generation 5 diodes
Your way is our way: improve efficiency and solution costs
60
d=350µ[email protected]°C
d=110µ[email protected]°C
50
40
IF [A/mm2]
Infineon: leading technology
An important achievement with Gen 5 is the industrial implementation of
a thinning process which allows reducing the wafer thickness to almost
1/3 while maintaining the proven quality and yield levels. The thinning
reduces the resistive contribution of the substrate (see picture on the
right) and one of its most striking benefit is a consistent improvement of
the surge current robustness, now at comparable level or even higher (for
IF <10A) than for G2 in spite of a smaller chip size.
In combination with our proprietary diffusion soldering, the reduced
thickness further contributes to decrease the overall thermal resistance
in the package. The pictures below show the temperature increase at the
junction under given forward current conditions for the same device area:
G5
30
G2-G3
20
10
0
Left: 350µm chip with 60µm soft solder; middle: 350µm chip with diff.
solder; right: 110µm chip with diff. solder
0
2
4
VF [V]
6
8
Planned product portfolio
TO-220 R2L
TO-247 New!
D2PAK R2L New!
ThinPAK 8x8 New!
IDK02G65C5
IDK03G65C5
IDK04G65C5
IDK05G65C5
IDK06G65C5
IDK08G65C5
IDK09G65C5
IDK10G65C5
IDK12G65C5
IDL02G65C5
650V
2A
3A
4A
5A
6A
8A
9A
10A
12A
16A
20A
30A
40A
IDH02G65C5
IDH03G65C5
IDH04G65C5
IDH05G65C5
IDH06G65C5
IDH08G65C5
IDH09G65C5
IDH10G65C5
IDH12G65C5
IDH16G65C5
IDH20G65C5
IDW10G65C5
IDW12G65C5
IDW16G65C5
IDW20G65C5
IDW30G65C5
IDW40G65C5
IDL04G65C5
IDL06G65C5
IDL08G65C5
IDL10G65C5
IDL12G65C5
Please check the single product status/availability on: www.infineon.com/sic
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2012 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9677-G1-X-7600-DB2012-0016
Date: 09 / 2012
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.