INFINEON IDH05S120

IDH05S120
thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC
1200
600
V
• No reverse recovery / No forward recovery
QC
3.2
18
nC
• Temperature independent switching behavior
IF; TC< 130 °C
3
5
A
• Switching behavior benchmark
• High surge current capability
• Pb-free lead plating; RoHS compliant
PG-TO220-2
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ!TM Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
IDH05S120
PG-TO220-2
D05S120
C
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
T C<130 °C
5
T C=25 °C, t p=10 ms
29
T C=150 °C, t p=10 ms
25
I F,max
T C=25 °C, t p=10 µs
110
∫i 2dt
T C=25 °C, t p=10 ms
4
T C=150 °C, t p=10 ms
3
Surge non-repetitive forward current, I F,SM
sine halfwave
Non-repetitive peak forward current
i ²t value
Value
Unit
A
A2s
Repetitive peak reverse voltage
V RRM
T j=25 °C
Diode dv/dt ruggedness
dv/ dt
VR= 0….960 V
50
V/ns
Power dissipation
P tot
T C=25 °C
75
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
Soldering temperature,
wavesoldering only allowed at leads
T sold
Mounting torque
Rev. 2.0
1200
1.6mm (0.063 in.)
from case for 10s
260
M3 and M3.5 screws
60
page 1
V
Mcm
2010-04-20
IDH05S120
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2
-
-
62
1200
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
Thermal resistance,
junction- ambient,
leaded
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V DC
I R=0.05 mA, T j=25 °C
Diode forward voltage
VF
I F=5 A, T j=25 °C
-
1,65
1,8
I F=5 A, T j=150 °C
-
2,55
-
V R=1200 V, T j=25 °C
-
5
120
V R=1200 V, T j=150 °C
-
20
1000
-
18
-
nC
-
-
<10
ns
pF
Reverse current
IR
V
µA
AC characteristics
Total capacitive charge
Qc
Switching time2)
tc
V R=400 V,I F≤I F,max,
di F/dt =200 A/µs,
T j=150 °C
Total capacitance
C
V R=1 V, f =1 MHz
-
250
-
V R=300 V, f =1 MHz
-
20
-
V R=600 V, f =1 MHz
-
18
-
1)
J-STD20 and JESD22
2)
t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from t rr which is dependent on T j, ILOAD and di/dt. No reverse recovery time constant t rr due
to absence of minority carrier injection
3)
Under worst case Zth conditions.
4)
Only capacitive charge occuring, guaranteed by design
Rev. 2.0
page 2
2010-04-20
IDH05S120
1 Power dissipation
2 Diode forward current
P tot=f(T C)
I F=f(T C)3); T j≤175 °C; parameter: D = t p/T
50
80
0.1
70
40
60
30
0.3
IF [A]
Ptot [W]
50
40
0.5
20
30
0.7
1
20
10
10
0
0
25
75
125
25
175
75
TC [°C]
125
175
TC [°C]
3 Typ. forward characteristic
4 Typ. Reverse current vs. reverse voltage
I F=f(V F); t p=400 µs
EC=f(VR)
parameter: T j
102
10
-55 °C
25 °C
100 °C
101
8
150 °C
175 °C
100
IF [A]
IR [µA]
6
175 °C
10-1
4
150 °C
100 °C
25 °C
10-2
2
-55 °C
10-3
0
0
2
4
6
400
600
800
1000
1200
VR [V]
VSD [V]
Rev. 2.0
200
page 3
2010-04-20
IDH05S120
5 Typ. capacitance charge vs. current slope
6 Transient thermal impedance
4)
Z thJC=f(t p)
Q C=f(di F/dt ) ; T j=150 °C; I F≤I F,max
parameter: D =t p/T
101
20
15
0.5
ZthJC [K/W]
QC [nC]
100
10
0.2
0.1
0.05
10-1
0.02
5
0
10-2
0
100
400
700
10-5
1000
10-4
10-3
10-2
10-1
t [s]
diF/dt [A/µs]
7 Typ. capacitance vs. reverse voltage
8 Typ. C stored energy
C =f(V R); T C=25 °C, f =1 MHz
E C=f(V R)
4
250
200
3
C [pF]
Ec [µC]
150
2
100
1
50
0
0
1
10
100
1000
VR [V]
Rev. 2.0
0
200
400
600
VR [V]
page 4
2010-04-20
IDH05S120
PG-TO220-2: Outline
thinQ!TM 2G Diode designed for fast switching applications like:
Dimensions in mm/inches
Rev. 2.0
page 5
2010-04-20
IDH05S120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
thinQ!TM 2G Diode designed for fast switching applications like:
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 6
2010-04-20