INFINEON BSP373_07

BSP 373
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant available
Pin 1
G
Pin 2
Pin 3
D
Type
VDS
ID
RDS(on)
Package
Marking
BSP 373
100 V
1.7 A
0.3 Ω
PG-SOT-223
BSP 373
Type
BSP 373
RoHS compliant
Yes
Pin 4
S
D
Tape and Reel Information
L6327: 1000 pcs/reel
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TA = 28 ˚C
Values
Unit
A
1.7
DC drain current, pulsed
IDpuls
TA = 25 ˚C
6.8
Avalanche energy, single pulse
mJ
EAS
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω
L = 23.3 mH, Tj = 25 ˚C
45
Gate source voltage
VGS
Power dissipation
Ptot
TA = 25 ˚C
Rev 1.2
± 20
V
W
1.8
1
2007-02-08
BSP 373
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air
RthJA
≤ 70
R thJS
≤ 10
Thermal resistance, junction-soldering point
1)
Values
DIN humidity category, DIN 40 040
Unit
˚C
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C
Gate threshold voltage
100
-
-
2.1
3
4
V GS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 100 V, V GS = 0 V, Tj = 125 ˚C
-
10
100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 1.7 A
Rev 1.2
nA
IGSS
-
2
0.16
0.3
2007-02-08
BSP 373
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A
Input capacitance
1.5
pF
-
400
550
-
125
190
-
70
105
Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
2.8
Ciss
VGS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
S
gfs
ns
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rise time
-
10
15
-
30
45
-
85
115
-
60
80
tr
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rev 1.2
3
2007-02-08
BSP 373
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 ˚C
Inverse diode direct current,pulsed
-
-
6.8
V
0.8
1.1
ns
trr
-
-
µC
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Rev 1.2
1.7
-
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
V SD
VGS = 0 V, IF = 1.7 A, Tj = 25 ˚C
Reverse recovery time
ISM
TA = 25 ˚C
Inverse diode forward voltage
A
IS
-
4
-
-
2007-02-08
BSP 373
Power dissipation
Ptot = ƒ(TA)
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
2.0
1.8
W
Ptot
A
1.6
ID
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
20
40
60
80
100
120
˚C
160
0
20
40
60
80
100
TA
120
˚C
160
TA
Safe operating area ID=f(VDS)
Transient thermal impedance
Zth JA = ƒ(tp )
parameter: D = tp / T
parameter : D = 0, TC=25˚C
10 2
K/W
10 1
ZthJA
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10
-4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Rev 1.2
5
2007-02-08
BSP 373
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 ˚C
lj
k
3.8
0.9
Ptotih
= 2W
g
A
fe
d c
a
b
Ω
3.2
VGS [V]
a
4.0
ID
2.8
b
2.4
2.0
1.6
1.2
a
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
k
10.0
l
20.0
RDS (on) 0.7
0.6
0.5
0.4
0.3
c
0.2
0.8
d
ikegjh f
l
0.1
0.4
0.0
VGS [V] =
a
4.0
b
4.5
c
5.0
d
5.5
e
f
6.0 6.5
g
7.0
h
i
7.5 8.0
j
9.0
k
l
10.0 20.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.0
0.4
0.8
1.2
1.6
2.0
A
VDS
2.8
ID
Typ. transfer characteristics ID = f(V GS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
parameter: tp = 80 µs,
6.5
4.5
A
S
5.5
ID
gfs
5.0
4.5
3.5
3.0
4.0
3.5
2.5
3.0
2.0
2.5
1.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
0.0
0
1
2
3
4
5
6
7
8
V
10
VGS
Rev 1.2
0.0
1.0
2.0
3.0
4.0
A
6.0
ID
6
2007-02-08
BSP 373
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 1.7 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
0.75
4.6
Ω
V
0.65
4.0
RDS (on)0.60
VGS(th)
98%
3.6
0.55
typ
3.2
0.50
2.8
0.45
0.40
2.4
98%
2%
0.35
2.0
0.30
1.6
0.25
typ
0.20
1.2
0.15
0.8
0.10
0.4
0.05
0.00
0.0
-60
-20
20
60
100
˚C
160
-60
-20
20
60
100
˚C
Tj
160
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
10 1
nF
A
IF
C
10 0
10 0
Ciss
10 -1
10 -1
Coss
Tj = 25 ˚C typ
Crss
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -2
0
5
10
15
20
25
30
V
40
VDS
Rev 1.2
10 -2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
2007-02-08
BSP 373
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.7 A, VDD = 25 V
RGS = 25 Ω, L = 23.3 mH
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
50
120
V
mJ
116
EAS
40
V(BR)DSS114
112
35
110
30
108
106
25
104
20
102
100
15
98
10
96
94
5
92
90
0
20
40
60
80
100
120
˚C
160
Tj
-60
-20
20
60
100
˚C
160
Tj
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25˚C
Rev 1.2
8
2007-02-08