SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06(NPN) 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 500 1 Unit V mA A mA TS ≤ 79°C -65 ... 150 Value ≤ 215 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA56/MMBTA56 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 80 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 80 - - V(BR)EBO 4 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 80 V, IE = 0 - - 0.1 VCB = 80 V, IE = 0 , TA = 150 °C - - 20 - - 0.1 Collector-emitter cutoff current I CEO VCE = 60 V, IB = 0 DC current gain1) - h FE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, V CE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 7 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 10 mA Base-emitter voltage1) IC = 100 mA, V CE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-19 SMBTA56/MMBTA56 DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 EHP00852 10 3 EHP00850 10 3 mA ΙC h FE 100 C 25 C -50C 100 C 10 2 25 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 3 0.0 0.5 V ΙC V CEsat Base-emitter saturation voltage Collector current I C = ƒ(V BE) IC = ƒ(V BEsat), hFE = 10 VCE = 1V EHP00849 10 3 mA mA 100 ˚C 25 ˚C -50 ˚C 10 2 10 2 5 10 1 10 1 5 5 10 0 10 0 5 5 0 0.5 1.0 V 100 C 25 C -50 C ΙC 5 10 -1 EHP00846 10 3 ΙC 1.0 10 -1 1.5 0 0.5 V 1.0 1.5 V BE V BEsat 3 2007-04-19 SMBTA56/MMBTA56 Collector cutoff current ICBO = ƒ(TA) VCB = 80 V Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz fT Ι CBO max 10 3 5 EHP00848 10 3 MHz EHP00851 10 4 nA 10 2 5 5 10 2 typ 10 1 5 5 10 0 5 10 1 10 0 10 -1 0 50 C 150 100 5 10 1 5 10 2 10 3 ΙC TA Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) Total power dissipation Ptot = ƒ(TS) 65 pF 360 mW 55 300 50 270 45 Ptot CCB(CEB ) mA 40 240 210 35 180 30 150 25 120 CEB 20 90 15 60 10 5 0 0 30 CCB 4 8 12 16 V 0 0 22 VCB(VEB) 4 15 30 45 60 75 90 105 120 °C 150 TS 2007-04-19 SMBTA56/MMBTA56 Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 10 4 Ptotmax/ P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 10 1 s 10 10 0 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2007-04-19 Package SOT23 SMBTA56/MMBTA56 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2007-04-19 SMBTA56/MMBTA56 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-19