BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360L3 Marking FB Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation2) Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS ≤ 104°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 3) RthJS ≤ 220 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-30 BFR360L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 3 V, pulse measured 2 2007-03-30 BFR360L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.26 0.4 Cce - 0.15 - Ceb - 0.42 - GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F min IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz - 1 - IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz - 1.3 - - 16 - - 11.5 - Power gain, maximum available1) G ma IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 3 GHz |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω , f = 1.8 GHz - 13.5 - f = 3 GHz - 9 - IP 3 - 24 - P-1dB - 9 - Third order intercept point at output2) dBm VCE = 3 V, I C = 15 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 15 mA, VCE = 3 V, Z S=ZL=50 Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2007-03-30 BFR360L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = V Ω fF ps mA V ns - 1 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14 mA A Ω mΩ V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA µA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C7 C1 L2 B Transistor Chip B’ C’ R1 L3 C E’ C6 C2 L1 C5 C3 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF Ω Valid up to 6GHz E EHA07536 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com 4 2007-03-30 BFR360L3 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 240 mW k/W RthJS Ptot 180 150 10 2 120 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 90 60 30 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/P totDC = ƒ(tp) f = 1MHz 10 1 0.8 Ptotmax /PtotDC pF 0.6 Ccb D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.5 0.4 0.3 0.2 0.1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 5 2007-03-30 BFR360L3 Third order Intercept Point IP3=ƒ(IC) Transition frequency fT = ƒ(IC) (Output, ZS=ZL=50Ω) f = 1 GHz VCE = parameter, f = 1.8 GHz VCE = parameter 30 18 GHz dBm 14 5V 20 3V fT IP3 12 15 10 6V 4V 3V 2V 1V 10 5 2V 8 1V 6 0.7V 4 0 -5 0 2 5 10 15 20 25 mA 30 0 0 40 5 10 15 20 25 30 IC A 40 IC Power gain Gma, Gms = ƒ(IC) VCE = 3 V Power gain Gma, Gms = ƒ(IC) f = 1.8GHz f = parameter in GHz VCE = parameter 24 18 dB 0.9GHz dB 20 5V 18 G G 3V 16 14 2V 1.8GHz 14 2.4GHz 12 12 3GHz 10 1V 4GHz 8 10 6 4 0 0.7V 5 10 15 20 25 30 35 dB 8 0 45 IC 5 10 15 20 25 30 mA 40 IC 6 2007-03-30 BFR360L3 Power Gain Gma, Gms = ƒ(f) Power Gain |S21|² = ƒ(f) VCE = parameter VCE = parameter 50 40 dB dB Ic=15mA Ic = 15mA 40 30 30 |S21|2- G 35 5V 2V 1V 0.7V 25 5V 2V 1V 0.7V 25 20 20 15 15 10 10 5 5 0 0 1 2 3 4 GHz 0 0 6 f 1 2 3 4 GHz 6 f Power Gain Gma, Gms = ƒ(VCE): f = parameter 24 dB Ic = 15mA 0.9GHz 20 18 G 1.8GHz 16 14 2.4GHz 12 3GHz 10 4GHz 8 6 4 0 1 2 3 4 V 6 VCE 7 2007-03-30 Package TSLP-3-1 BFR360L3 Package Outline Bottom view 0.4 +0.1 0.6 ±0.05 0.5 ±0.035 2 1 ±0.05 3 0.65 ±0.05 3 1) 2 1 1) 0.05 MAX. 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 2 x 0.25 ±0.035 1 0.25 ±0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 8 2007-03-30 BFR360L3 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-03-30