NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 3.0 mW @ 10 V Q1 Top FET 30 V 25 A 4.3 mW @ 4.5 V Applications • DC−DC Converters • System Voltage Rails • Point of Load ID MAX Q2 Bottom FET 30 V 0.8 mW @ 10 V 49 A 1.2 mW @ 4.5 V D1 (3, 4, 9) (1) G1 (2) S1 SW (5, 6, 7) (8) G2 S2 (10) Figure 1. Typical Application Circuit PIN CONNECTIONS D1 4 100 D1 3 EFFICIENCY (%) 95 S1 2 5 SW 9 D1 10 S2 6 SW 7 SW G1 1 90 8 G2 (Bottom View) 85 MARKING DIAGRAM 80 VIN = 12 V VOUT = 1.2 V VGS = 5 V FSW = 300 kHz TA = 25°C 75 70 0 5 10 15 20 LOAD CURRENT (A) 25 1 DFN8 CASE 506CR 4C85N AYWZZ 1 30 4C85N A Y W ZZ Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 2 1 Publication Order Number: NTMFD4C85N/D NTMFD4C85N Table 1. MAXIMUM RATINGS (TJ=25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Symbol Value Units VDSS 30 V VGS ±20 V ID 20.1 A Q2 Gate−to−Source Voltage Q1 Q2 Continuous Drain Current RθJA (Note 1) TA = 25°C Q1 TA = 85°C TA = 25°C 14.5 Q2 39 TA = 85°C Power Dissipation RθJA (Note 1) TA = 25°C Continuous Drain Current RθJA ≤ 10 s (Note 1) TA = 25°C 28.1 Q1 PD 1.95 W ID 25.4 A Q2 Q1 TA = 85°C TA = 25°C 18.3 Q2 49.2 TA = 85°C Power Dissipation RθJA ≤ 10 s (Note 1) 35.5 Q1 Steady State TA = 25°C Continuous Drain Current RθJA (Note 2) TA = 25°C PD 3.10 W ID 15.4 A Q2 Q1 TA = 85°C TA = 25°C 11.1 Q2 29.7 TA = 85°C Power Dissipation RθJA (Note 2) 21.4 Q1 TA = 25°C Continuous Drain Current RθJC PD 1.13 W ID 67 A Q2 Q1 Q2 TC = 25°C Power Dissipation RθJC Q1 174 PD Q2 Pulsed Drain Current TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Q1 W 40 IDM Q2 Q1 22 300 A 525 TJ, TSTG −55 to +150 °C IS 10 A Q2 Source Current (Body Diode) Q1 Q2 Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W) 10 dV/dt 6 V/ns mJ IL = 19 Apk Q1 EAS 34.5 IL = 26 Apk Q2 EAS 222 TL 260 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4C85N Table 2. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Symbol Value Units RθJA 64.2 °C/W Junction−to−Ambient – Steady State (Note 4) 110.5 Junction−to−Ambient – (t ≤ 10 s) (Note 3) 40.3 Junction−to−Case (bottom) – Steady State Q1 RθJC °C/W 5.6 Junction−to−Case (bottom) – Steady State Q2 3.1 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2 Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol FET V(BR)DSS Q1 Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 250 mA Q2 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS / TJ Zero Gate Voltage Drain Current IDSS 19 Q2 17 Q1 Q2 IGSS 30 Q1 VGS = 0 V, VDS = 24 V Gate−to−Source Leakage Current V 30 Q1 TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 1 100 VDS = 0 V, VGS = 20 V Q2 mV/°C mA nA 100 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) Q1 VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient VGS(TH) / TJ Drain−to−Source On Resistance RDS(on) 1.3 2.1 1.3 2.1 Q1 4.3 Q2 4.6 Q1 Q2 V mV/°C VGS = 10 V ID = 20 A 2.2 3.0 VGS = 4.5 V ID = 20 A 3.3 4.3 VGS = 10 V ID = 30 A 0.6 0.8 VGS = 4.5 V ID = 30 A 0.95 1.2 mW CAPACITANCES Input Capacitance CISS Output Capacitance COSS Q1 1960 Q2 6660 Q1 Q2 Reverse Capacitance CRSS pF 1230 VGS = 0 V, f = 1 MHz, VDS = 15 V 3660 Q1 102 Q2 126 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 3 NTMFD4C85N Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol FET Test Condition Min Typ Total Gate Charge QG(TOT) Q1 15 Q2 45.2 Threshold Gate Charge QG(TH) Q1 1.5 Gate−to−Source Charge QGS Max Units CHARGES & GATE RESISTANCE Q2 Q1 4.5 VGS = 4.5 V, VDS = 15 V; ID = 20 A Q2 Gate−to−Drain Charge Total Gate Charge QGD QG(TOT) Gate Resistance RG 5.0 15 Q1 5.2 Q2 11.8 Q1 Q2 nC 32 VGS = 10 V, VDS = 15 V; ID = 20 A Q1 1.0 TA = 25°C Q2 nC 99.3 W 1.0 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time td(ON) tr Q1 10.3 Q2 19.5 Q1 37 Q2 Turn−Off Delay Time Fall Time td(OFF) tf Q1 VGS = 4.5 V, VDS = 15 V, ID = 20 A, RG = 3.0 W ns 27 20 Q2 47 Q1 5.6 Q2 15 Q1 8.0 Q2 12.6 Q1 31.5 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time td(ON) tr Q2 Turn−Off Delay Time Fall Time td(OFF) tf Q1 VGS = 10 V, VDS = 15 V, ID = 20 A, RG = 3.0 W ns 22.7 25 Q2 60 Q1 4.0 Q2 12.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Voltage VSD Q1 Q2 VGS = 0 V, IS = 10 A VGS = 0 V, IS = 10 A TJ = 25°C 0.78 TJ = 125°C 0.62 TJ = 25°C 0.75 TJ = 125°C 0.55 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 4 NTMFD4C85N Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol FET Test Condition Min Typ Max Units DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Charge Time ta Discharge Time tb Q1 40 Q2 73 Q1 20 Q2 Q1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 2 A Q2 Reverse Recovery Charge QRR ns 40 20 33 Q1 37 Q2 137 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 5 NTMFD4C85N TYPICAL CHARACTERISTICS − Q1 160 140 VDS = 3 V VGS = 3.6 V 140 4.0 V − 10 V 120 TJ = 25°C IDS, DRAIN CURRENT (A) IDS, DRAIN CURRENT (A) 160 3.8 V 3.4 V 100 80 3.2 V 60 3.0 V 40 2.8 V 20 120 100 80 60 20 2.6 V 2.4 V 0 0 1 2 3 4 0 5 −55°C 0.5 1.0 1.5 2.5 2.0 3.0 4.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics 4.5 6 9 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 125°C 0 10 TJ = 25°C ID = 20 A 8 7 6 5 4 3 2 5 4 VGS = 4.5 V 3 VGS = 10 V 2 TJ = 25°C 1 0 1 2 3 4 5 6 7 8 9 10 10 20 40 30 50 60 70 80 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 5. On−Resistance vs. Gate−to−Source Voltage Figure 6. On−Resistance vs. Drain Current and Gate Voltage 4000 1.8 1.6 VGS = 10 V ID = 20 A 1.4 1.2 1.0 0.8 0.6 3000 2500 CISS 2000 COSS 1500 1000 500 0.4 0.2 −50 VGS = 0 V TJ = 25°C f = 1 MHz 3500 C, CAPACITANCE (pF) RDS(on) (Normalized to 25°C) 25°C 40 CRSS 0 −25 0 25 50 75 100 125 0 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. On−Resistance Variation with Temperature Figure 8. Capacitance Variation www.onsemi.com 6 30 NTMFD4C85N TYPICAL CHARACTERISTICS − Q1 10 1000 td(off) tf 100 tr td(on) 10 8 7 6 5 4 3 2 1 0 1 1 10 0.3 100 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. On−Region Characteristics Figure 10. Diode Forward Voltage vs. Current 1.0E+05 12 VGS = 0 V QT 10 TJ = 150°C IDSS, LEAKAGE (nA) 1.0E+04 8 6 4 QGS QGD VGS = 10 V VDS = 15 V ID = 20 A TJ = 25°C 2 0 0 3 6 9 12 TJ = 125°C 1.0E+03 TJ = 85°C 1.0E+02 1.0E+01 1.0E+00 15 0 5 10 15 20 25 QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 12. Drain−to−Source Leakage Current vs. Voltage 1000 ID, DRAIN CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 9 IS, SOURCE CURRENT (A) t, TIME (ns) VGS = 10 V VDS = 15 V ID = 20 A 100 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 7 100 30 NTMFD4C85N TYPICAL CHARACTERISTICS − Q1 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 14. Thermal Characteristics www.onsemi.com 8 1 10 100 1000 NTMFD4C85N TYPICAL CHARACTERISTICS − Q2 160 3.2 V − 10 V VGS = 3.0 V 140 VDS = 3 V IDS, DRAIN CURRENT (A) IDS, DRAIN CURRENT (A) 140 TJ = 25°C 120 2.8 V 100 80 60 2.6 V 40 20 120 100 80 60 20 2.4 V 125°C 0 1 2 3 4 0 5 0.5 1.0 1.5 2.5 2.0 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 15. On−Region Characteristics Figure 16. Transfer Characteristics 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3.5 1.6 TJ = 25°C ID = 30 A RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −55°C 0 0 1.4 1.2 VGS = 4.5 V 1.0 0.8 VGS = 10 V 0.6 0.4 TJ = 25°C 0.2 0 2 3 4 5 6 7 8 9 20 10 30 40 50 60 70 VGS, GATE VOLTAGE (V) IDS, DRAIN CURRENT (A) Figure 17. On−Resistance vs. Gate−to−Source Voltage Figure 18. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.8 1.6 VGS = 0 V TJ = 25°C f = 1 MHz 9000 VGS = 10 V ID = 30 A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 −50 80 10,000 C, CAPACITANCE (pF) RDS(on) (Normalized to 25°C) 25°C 40 8000 7000 CISS 6000 COSS 5000 4000 3000 2000 1000 CRSS 0 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 19. On−Resistance Variation with Temperature Figure 20. Capacitance Variation www.onsemi.com 9 30 NTMFD4C85N TYPICAL CHARACTERISTICS − Q2 1000 tf 100 tr td(on) 10 8 7 6 5 4 3 2 1 0 1 1 10 0.3 100 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 21. On−Region Characteristics Figure 22. Diode Forward Voltage vs. Current 1.0E+06 12 VGS = 0 V QT 1.0E+05 IDSS, LEAKAGE (nA) 10 8 6 4 QGS QGD VGS = 10 V VDS = 15 V ID = 20 A TJ = 25°C 2 0 0 5 10 15 20 30 25 35 40 TJ = 150°C TJ = 125°C 1.0E+04 TJ = 85°C 1.0E+03 1.0E+02 1.0E+01 1.0E+00 0 45 5 10 15 20 25 QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 23. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 24. Drain−to−Source Leakage Current vs. Voltage 1000 ID, DRAIN CURRENT (A) VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 9 IS, SOURCE CURRENT (A) t, TIME (ns) 10 td(off) VGS = 10 V VDS = 15 V ID = 20 A 100 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 100 ms 1 ms 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 25. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 10 100 30 NTMFD4C85N TYPICAL CHARACTERISTICS − Q2 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 26. Thermal Characteristics Ordering Information Package Shipping† NTMFD4C85NT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4C85NT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 11 NTMFD4C85N PACKAGE DIMENSIONS DFN8 5x6, 1.27P PowerPhase FET CASE 506CR ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 0.20 C D A B D1 8 PIN ONE IDENTIFIER 7 ÉÉ ÉÉ 1 2 6 2X 0.20 C 5 E1 E 4X h 3 c 4 A1 TOP VIEW A 0.10 C DETAIL A 0.10 C C NOTE 4 SIDE VIEW 8X b 0.10 M 0.05 M 1 5X DETAIL A L 6X SEATING PLANE NOTE 6 0.10 C A B C C A B NOTE 3 1 E3 b2 0.10 M C A B E2 G RECOMMENDED SOLDERING FOOTPRINT* L2 D3 e/2 e BOTTOM VIEW MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.40 0.60 0.40 0.60 0.20 0.30 5.15 BSC 4.90 5.10 3.70 3.90 2.96 3.16 6.15 BSC 5.80 6.00 2.37 2.57 1.05 1.25 1.36 1.56 1.27 BSC 0.625 BSC 1.615 BSC −−− 12 _ 0.34 0.59 1.68 1.93 D2 G1 E4 M DIM A A1 b b2 c D D1 D2 D3 E E1 E2 E3 E4 e G G1 h L L2 5.50 4.05 SUPPLEMENTAL BOTTOM VIEW 1.27 PITCH 0.62 2.07 5X 0.75 0.54 1.22 2.67 1.66 5X 0.71 2.31 0.76 0.23 0.98 6.50 6X 0.65 4.10 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 NTMFD4C85N ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 13 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFD4C85N/D