ANPEC APM4034N

APM4034NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
40V/20A,
RDS(ON)= 29mΩ (typ.) @ VGS= 10V
RDS(ON)= 45mΩ (typ.) @ VGS= 5V
•
•
•
G
D
Super High Dense Cell Design
S
Top View of TO-252
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(2)
D1
Applications
•
(1)
G1
Inventer Application in LCM and LCD TV
S1
(3)
N-Channel MOSFET
Ordering and Marking Information
APM4034N
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4034N U :
APM4034N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC
lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
1
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APM4034NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
20*
A
TC=25°C
40
TC=100°C
20
TC=25°C
20*
TC=100°C
10
TC=25°C
50
TC=100°C
20
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
V
A
A
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Notes:
* Current limited by bond wire.
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
1
30
1.5
2
V
±100
nA
29
37
VGS=5V, IDS=5A
45
62
ISD=2A, VGS=0V
0.8
1.1
2
µA
3
VGS=10V, IDS=10A
ISD=10A, dISD/dt =100A/µs
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Characteristics
a
VSD
Diode Forward Voltage
40
VDS=32V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM4034NU
Min. Typ. Max.
mΩ
V
16
ns
8
nC
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APM4034NU
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM4034NU
Min. Typ. Max.
Unit
VGS=0V,VDS=0V,F=1MHz
2
Ω
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
500
pF
70
50
4
8
11
21
17
32
3
6
10
14
ns
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=20V, VGS=10V,
IDS=10A
1.8
nC
2
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
3
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APM4034NU
Typical Characteristics
Drain Current
Power Dissipation
60
25
20
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
15
10
5
10
o
TC=25 C,VG=10V
o
0
TC=25 C
0
20
40
60
0
80 100 120 140 160 180
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
10
Normalized Transient Thermal Resistance
Lim
it
300us
Rd
s(o
n)
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
1ms
10ms
100ms
1s
DC
1
O
TC=25 C
0.1
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
0.01
1E-4
100
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
2
4
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APM4034NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
70
40
VGS= 7,8,9,10V
65
RDS(ON) - On - Resistance (mΩ)
35
6V
ID - Drain Current (A)
30
25
5.5V
20
5V
15
10
4.5V
5
4V
0.5
1.0
1.5
2.0
55
50
45
40
VGS=10V
35
30
25
20
15
3.5V
0
0.0
VGS=5V
60
2.5
10
3.0
0
5
10
15
20
35
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
40
1.6
IDS =250µA
ID=10A
60
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (mΩ)
30
VDS - Drain-Source Voltage (V)
65
55
50
45
40
35
30
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25
20
25
3
4
5
6
7
8
9
0.0
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
0
5
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APM4034NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
40
VGS = 10V
IDS = 10A
1.6
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
0.2
o
Tj=150 C
o
Tj=25 C
1
o
[email protected]=25 C: 29mΩ
0.0
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.6 0.8 1.0
1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
700
1.6
10
Frequency=1MHz
VDS= 20V
9
500
VGS - Gate-source Voltage (V)
600
C - Capacitance (pF)
0.2 0.4
Ciss
400
300
200
100
Coss
ID= 10A
8
7
6
5
4
3
2
1
Crss
0
0
0
5
10
15
20
25
30
35
40
1
2
3
4
5
6
7
8
9
10
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
0
6
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APM4034NU
Package Information
TO252-3
E
A
c2
E1
L4
H
D
D1
L3
b3
c
e
SEE VIEW A
0
SEATING PLANE
L
0.25
GAUGE PLANE
A1
b
VIEW A
TO252
S
Y
M
B
O
L
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
INCHES
MILLIMETERS
0.005
0.13
A1
b
0.50
0.89
0.020
0.035
b3
4.95
5.46
0.195
0.215
0.024
c
0.46
0.61
0.018
c2
0.46
0.89
0.018
0.035
D
5.33
6.22
0.210
0.245
D1
4.57
E
6.35
E1
3.81
e
0.180
0.250
6.73
0.265
0.150
2.29 BSC
0.090 BSC
9.40
10.41
0.370
0.410
L
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
H
L4
0
0.040
1.02
0°
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
8°
0°
7
8°
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APM4034NU
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
T2
W
P
E
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1
1.75± 0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 ± 0.1
1.5 +0.1
2.5± 0.1
0.3±0.05
1.5± 0.25 4.0 ± 0.1
2.0 ± 0.1
6.8 ± 0.1 10.4± 0.1
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
Cover Tape Width
13.3
8
Devices Per Reel
2500
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APM4034NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsm in
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
9
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APM4034NU
Classification Reflow Profiles (Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volum e m m
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
10
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