APM4034NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/20A, RDS(ON)= 29mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 5V • • • G D Super High Dense Cell Design S Top View of TO-252 Reliable and Rugged Lead Free Available (RoHS Compliant) (2) D1 Applications • (1) G1 Inventer Application in LCM and LCD TV S1 (3) N-Channel MOSFET Ordering and Marking Information APM4034N Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Lead Free Code Handling Code Temp. Range Package Code APM4034N U : APM4034N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 1 www.anpec.com.tw APM4034NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 20* A TC=25°C 40 TC=100°C 20 TC=25°C 20* TC=100°C 10 TC=25°C 50 TC=100°C 20 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation V A A W RθJC Thermal Resistance-Junction to Case 2.5 °C/W RθJA Thermal Resistance-Junction to Ambient 50 °C/W Notes： * Current limited by bond wire. Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V trr Reverse Recovery Time Qrr Reverse Recovery Charge Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 1 30 1.5 2 V ±100 nA 29 37 VGS=5V, IDS=5A 45 62 ISD=2A, VGS=0V 0.8 1.1 2 µA 3 VGS=10V, IDS=10A ISD=10A, dISD/dt =100A/µs Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Characteristics a VSD Diode Forward Voltage 40 VDS=32V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4034NU Min. Typ. Max. mΩ V 16 ns 8 nC www.anpec.com.tw APM4034NU Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4034NU Min. Typ. Max. Unit VGS=0V,VDS=0V,F=1MHz 2 Ω b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=20V, Frequency=1.0MHz VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge 500 pF 70 50 4 8 11 21 17 32 3 6 10 14 ns b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=20V, VGS=10V, IDS=10A 1.8 nC 2 Notes： a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 3 www.anpec.com.tw APM4034NU Typical Characteristics Drain Current Power Dissipation 60 25 20 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 15 10 5 10 o TC=25 C,VG=10V o 0 TC=25 C 0 20 40 60 0 80 100 120 140 160 180 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 Normalized Transient Thermal Resistance Lim it 300us Rd s(o n) ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 1ms 10ms 100ms 1s DC 1 O TC=25 C 0.1 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 0.01 1E-4 100 Mounted on 1in pad o RθJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 2 4 www.anpec.com.tw APM4034NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 70 40 VGS= 7,8,9,10V 65 RDS(ON) - On - Resistance (mΩ) 35 6V ID - Drain Current (A) 30 25 5.5V 20 5V 15 10 4.5V 5 4V 0.5 1.0 1.5 2.0 55 50 45 40 VGS=10V 35 30 25 20 15 3.5V 0 0.0 VGS=5V 60 2.5 10 3.0 0 5 10 15 20 35 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 40 1.6 IDS =250µA ID=10A 60 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 30 VDS - Drain-Source Voltage (V) 65 55 50 45 40 35 30 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 20 25 3 4 5 6 7 8 9 0.0 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 0 5 www.anpec.com.tw APM4034NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 40 VGS = 10V IDS = 10A 1.6 10 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 0.2 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 29mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 700 1.6 10 Frequency=1MHz VDS= 20V 9 500 VGS - Gate-source Voltage (V) 600 C - Capacitance (pF) 0.2 0.4 Ciss 400 300 200 100 Coss ID= 10A 8 7 6 5 4 3 2 1 Crss 0 0 0 5 10 15 20 25 30 35 40 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 0 6 www.anpec.com.tw APM4034NU Package Information TO252-3 E A c2 E1 L4 H D D1 L3 b3 c e SEE VIEW A 0 SEATING PLANE L 0.25 GAUGE PLANE A1 b VIEW A TO252 S Y M B O L MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 INCHES MILLIMETERS 0.005 0.13 A1 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 0.024 c 0.46 0.61 0.018 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 E 6.35 E1 3.81 e 0.180 0.250 6.73 0.265 0.150 2.29 BSC 0.090 BSC 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 H L4 0 0.040 1.02 0° Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 8° 0° 7 8° www.anpec.com.tw APM4034NU Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application TO-252 A B C J T1 T2 W P E 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 -0.2 2.5± 0.5 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t 7.5 ± 0.1 1.5 +0.1 2.5± 0.1 0.3±0.05 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 Cover Tape Width 13.3 8 Devices Per Reel 2500 www.anpec.com.tw APM4034NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsm in Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 9 www.anpec.com.tw APM4034NU Classification Reflow Profiles (Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volum e m m Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description 245°C, 5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100%RH, 121°C -65°C~150°C, 200 Cycles Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pao Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2007 10 www.anpec.com.tw