BSZ050N03LS G !"#$%!&™3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS(on),max 5 mW • Optimized technology for DC/DC converters ID 40 A • Qualified according to JEDEC1) for target applications PG-TSDSON-8 • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ050N03LS G PG-TSDSON-8 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 40 V GS=10 V, T C=100 °C 40 V GS=4.5 V, T C=25 °C 40 V GS=4.5 V, T C=100 °C 40 V GS=10 V, T A=25 °C, R thJA=60 K/W 2) 16 Unit A Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche current, single pulse4) I AS T C=25 °C 20 Avalanche energy, single pulse E AS I D=20 A, R GS=25 W 70 mJ Reverse diode dv /dt dv /dt I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS 1) Rev. 1.3 ±20 V J-STD20 and JESD22 page 1 2009-11-05 BSZ050N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 50 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.1 R thJA=60 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.5 - - 60 Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 6.2 7.8 mW V GS=10 V, I D=20 A - 4.2 5 0.7 1.4 2.5 W 38 76 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.3 See figure 3 for more detailed information page 2 2009-11-05 BSZ050N03LS G Parameter Values Symbol Conditions Unit min. typ. max. - 2100 2800 - 790 1100 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 41 - Turn-on delay time t d(on) - 5.2 - Rise time tr - 4.0 - Turn-off delay time t d(off) - 21 - Fall time tf - 3.6 - Gate to source charge Q gs - 6.3 8.4 Gate charge at threshold Q g(th) - 3.2 4.3 Gate to drain charge Q gd - 2.9 4.8 Switching charge Q sw - 6.0 8.9 Gate charge total Qg - 13 17 Gate plateau voltage V plateau - 3.1 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 26 35 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 11 14 Output charge Q oss V DD=15 V, V GS=0 V - 20 27 - - 40 - - 160 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 °C - 0.82 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 15 nC 4) 5) Rev. 1.3 See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2009-11-05 BSZ050N03LS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS!10 V 60 50 50 40 40 I D [A] P tot [W] 30 30 20 20 10 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 102 10 µs 0.5 1 Z thJC [K/W] 100 µs I D [A] DC 10 1 1 ms 10 ms 0.2 0.1 0.05 0.02 0.1 0.01 100 single pulse 10-1 10-1 0.01 100 101 102 0 -6 10 0 -5 10 0 -4 10 0 -3 10 0 -2 10 1 -1 10 0 t p [s] V DS [V] Rev. 1.3 0 10 page 4 2009-11-05 BSZ050N03LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 10 5V 10 V 3.5 V 4.5 V 8 120 4V R DS(on) [mW ] I D [A] 4V 80 4.5 V 6 5V 10 V 4 11.5 V 3.5 V 40 2 3.2 V 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 180 120 135 g fs [S] I D [A] parameter: T j 80 40 90 45 150 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 1.3 0 40 80 120 160 I D [A] V GS [V] page 5 2009-11-05 BSZ050N03LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 8 2.5 2 6 V GS(th) [V] R DS(on) [mW W] 98 % typ 4 1.5 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 25 °C 10 2 Coss 1000 100 150 °C, 98% I F [A] C [pF] 10 3 150 °C 25 °C, 98% 10 100 Crss 101 1 10 0 5 10 15 20 25 30 Rev. 1.3 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-11-05 BSZ050N03LS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 6V 10 15 V 24 V 8 10 V GS [V] I AV [A] 25 °C 100 °C 125 °C 6 4 2 1 0 1 10 100 1000 0 10 20 30 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.3 page 7 2009-11-05 BSZ050N03LS G Package Outline Rev. 1.3 PG-TSDSON-8 page 8 2009-11-05 BSZ050N03LS G ! " # $ $ % & ' & ( ) * " + "! ! " ! ! # +,-.<=>C%., $ contact the nearest Infineon Technologies Office (www.infineon.com). H><,%,1& % & $ & ' # ! ! # ( Rev. 1.3 page 9 2009-11-05