FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 27-Jul-2009 SUBJECT: ON Semiconductor Final Product/Process Change Notification #16305 TITLE: Copper or Gold Wire for ChipFET MOSFET Products PROPOSED FIRST SHIP DATE: 26-Oct-2009 AFFECTED CHANGE CATEGORY(S): ON Semiconductor ChipFET Assembly Areas – Wire Bond AFFECTED PRODUCT DIVISION(S): Integrated Power Devices FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Mike Davitt <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Jennie Shen <[email protected]> ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: ON Semiconductor is notifying customers of its use of either Copper or Gold Wire for their ChipFET Packaged Products. The ChipFET Products built with MOSFET Die and/or Schottky Die are represented by this Process Change Notice. Reliability Qualification and full electrical characterization over temperature has been performed. Issue Date: 27-Jul-2009 Rev.14 Jun 2007 Page 1 of 4 Final Product/Process Change Notification #16305 RELIABILITY DATA SUMMARY: Device Name: NTHS5441T1G Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Storage Life (HTSL) Conditions: Ta=150'C, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Storage Life (HTSL) Conditions: Ta=175'C, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: Autoclave Test (AC-PC) Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 96-Hrs, 3-Lots Results: 0/240 Test: Highly Accelerated Stress Test (HAST) Conditions: Ta=130'C, RH=85%, Duration: 96-Hrs, 3-Lots Results: 0/240 Device Name: NTHD4P02FT1G Test: High Temperature Reverse Bias (HTRB) Conditions: Schottky only, Ta=150'C, Vds= 80% BVr Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Reverse, High Humidity Bias (H3TRB) Conditions: Schottky only, Ta=85'C, RH=85%, Vds= 80% BVr Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Storage Life (HTSL) Conditions: Ta=150'C, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Storage Life (HTSL) Conditions: Ta=175'C, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: Intermittent Operating Life (IOL-PC) Conditions: Schottky only, Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 1-Lot Results: 0/80 Test: Temperature Cycling (TC-PC) Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 500-cy, 1-Lot Results: 0/80 Issue Date: 27-Jul-2009 Rev.14 Jun 2007 Page 2 of 4 Final Product/Process Change Notification #16305 Test: Autoclave Test (AC-PC) Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 96-Hrs, 3-Lots Results: 0/240 Device Name: NTHS5404NT1G Test: Temperature Cycling (TC-PC) Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 500-cy, 1-Lot Results: 0/80 Test: Intermittent Operating Life (IOL-PC) Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 1-Lot Results: 0/80 Device Name: NTHD5904NT1G Test: Temperature Cycling (TC-PC) Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 500-cy, 1-Lot Results: 0/80 Test: Intermittent Operating Life (IOL-PC) Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 1-Lot Results: 0/80 Test: Autoclave Test (AC-PC) Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 96-Hrs, 1-Lot Results: 0/80 Test: Highly Accelerated Stress Test (HAST) Conditions: Ta=130'C, RH=85%, Duration: 96-Hrs, 1-Lot Results: 0/80 ELECTRICAL CHARACTERISTIC SUMMARY: There is no electrical parametric performance between products assembled with Copper or Gold Wire. Characterization data is available upon request. CHANGED PART IDENTIFICATION: Products (listed on this FPCN) assembled with either the Copper or Gold Wire from the ON Semiconductor facility in Seremban, Malaysia, will have a Finish Good Date Code representing Work Week 42, 2009 or newer. Issue Date: 27-Jul-2009 Rev.14 Jun 2007 Page 3 of 4 Final Product/Process Change Notification #16305 AFFECTED DEVICE LIST NTHC5513T1 NTHC5513T1G NTHD2102PT1 NTHD2102PT1G NTHD2102PT1H NTHD2110TT1G NTHD3100CT1 NTHD3100CT1G NTHD3101FT1 NTHD3101FT1G NTHD3102CT1G NTHD3133PFT1G NTHD3133PFT3G NTHD4102PT1 NTHD4102PT1G NTHD4102PT3G NTHD4102PT1H NTHD4401PT1G NTHD4401PT3G NTHD4502NT1 NTHD4502NT1G NTHD4508NT1 NTHD4508NT1G NTHD4N02FT1 NTHD4N02FT1G NTHD4P02FT1 NTHD4P02FT1G NTHD5903T1 NTHD5903T1G NTHD5904NT1 NTHD5904NT1G NTHD5905T1 NTHS2101PT1 NTHS2101PT1G NTHS4101PT1 NTHS4101PT1G NTHS4111PT1G NTHS4166NT1G NTHS4501NT1 NTHS4501NT1G NTHS5404T1 NTHS5404T1G NTHS5404T1H NTHS5441T1 NTHS5441T1G NTHS5441T1H NTHS5441PT1G NTHS5443T1 NTHS5443T1G NTHS5443T1H STHS4101PT1 STHS4101PT1G Issue Date: 27-Jul-2009 Rev.14 Jun 2007 Page 4 of 4