PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 • Broadband internal matching • Wide video bandwidth • Typical CW performance, 960 MHz, 28 V - Average output power = 160 W - Gain = 19.5 dB - Efficiency = 60% • Integrated ESD protection • Low thermal resistance • Thermally enhanced package is Pb-free and RoHS compliant • Capable of handling 10:1 VSWR @ 28 V, 160 W (CW) output power 70 20.5 20.0 50 19.5 40 19.0 19 0 30 18.5 20 Drain Efficiency (%) 60 Gain Gain (dB) PTFB091507FH Package H-34288-4/2 Efficiency 18.0 10 41 43 45 47 49 51 53 Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (not subject to production test; verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 50 W average ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Gain Gps — 20 — dB Drain Efficiency ηD — 38 — % ACPR — –36 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet – DRAFT ONLY 1 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 19.5 20 — dB Drain Efficiency D 43.5 45 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.5 3.9 4.5 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.31 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB091507FH V1 H-34288-4/2 Ceramic open-cavity, earless flange Tray PTFB091507FH V1 R250 H-34288-4/2 Ceramic open-cavity, earless flange Tape & Reel, 250 pcs Data Sheet – DRAFT ONLY 2 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Typical Performance (data taken in Infineon test fixture) Two-tone Drive-up Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency VDD = 28 V, IDQ = 2.4 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz VDD = 28 V, IDQ = 1.2 A, POUT = 63 W Efficiency 40 -20 30 -30 IMD3 -40 20 Gain -50 10 840 890 940 990 45 40 -30 35 30 -40 25 20 -50 IMD 3rd Order 15 10 -60 38 1040 Drain n Efficiency (%) -10 50 Efficiency IMD (dBc) Gain (dB)) / Efficiency (%) Input Return Loss 50 -20 Return Loss oss (dB) / IMD (dBc) 0 60 40 42 44 46 48 50 Output Power, PEP (dBm) Frequency (MHz) Two-tone Drive-up at Selected Frequencies Two-tone Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ1 = 960 MHz, ƒ2 = 959 MHz VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz 21.0 50 -20 40 20.0 30 Effi i Efficiency 19.5 20 19.0 Drain n Efficiency (%) Gain (dB) 20.5 3rd Order IMB (dBc) 960 MHz Gain 10 38 40 42 44 46 48 920 MHz -40 -50 -60 50 42 Output Power, PEP (dBm) Data Sheet – DRAFT ONLY 940 MHz -30 44 46 48 50 52 Output Power, PEP (dBm) 3 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA 3GPP Drive-up Intermodulation Distortion 960 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz VDD = 28 V, IDQ = 1.2 A,, ƒ1 = 960 MHz, ƒ2 = 959 MHz -25 50 -15 7th ACP (dBc) -45 -55 -65 -25 40 -35 30 -45 20 ACP Low ACP Up -55 41 43 45 47 49 51 53 42 44 Output Power, PEP (dBm) 50 Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up 960 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 960 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz Efficiency 30 -20 -40 15 Gain ACPR 0 ACPR (dBc) 45 0 44 46 48 6 PAR* 4 -20 2 -40 ACPR 0 -60 0 -60 8 20 60 PAR* Efficiency cy (%) / Gain (dB) PAR (dB) dB) / ACPR (dBc) 10 48 Average Output Power (dBm) 20 42 46 42 50 PAR (dB) 3rd Order rder IMB (dBc) 5th Drain Efficiency (%) Efficiency 3rd Order -35 44 46 48 50 Average Output Power (dBm) Average Output Power (dBm) *Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve Data Sheet – DRAFT ONLY 4 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up 940 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 940 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz Efficiency -20 30 15 Gain ACPR -60 44 46 48 4 -20 -40 0 42 0 -60 50 42 44 48 50 Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up 920 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 920 MHz VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 60 0 45 Efficiency -20 30 15 Gain ACPR -60 0 46 48 6 PAR* 4 -20 -40 0 44 8 20 ACPR (dBc) PAR* Efficiency ncy (%) / Gain (dB) PAR (dB) / ACPR (dBc) 46 Average Output Power (dBm) 20 42 2 ACPR Average Output Power (dBm) -40 6 PAR* 2 ACPR 0 -60 50 PAR (dB) -40 0 PAR (dB) 45 ACPR (dBc) 0 8 20 60 PAR* Efficiency cy (%) / Gain (dB) PAR (dB) dB) / ACPR (dBc) 20 42 Average Output Power (dBm) 44 46 48 50 Average Output Power (dBm) *Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve Data Sheet – DRAFT ONLY 5 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Broadband Circuit Impedance Frequency MHz Z source (W) Z Load (W) R jX R jX 910 2.23 -3.12 1.53 -0.87 920 2.23 -3.03 1.52 -0.84 930 2.23 -2.95 1.50 -0.81 940 2.24 -2.87 1.49 -0.77 950 2.25 -2.80 1.46 -0.74 960 2.26 -2.73 1.44 -0.71 970 2.27 -2.65 1.42 -0.67 D Z Source Z Load G S See next page for Reference Circuit information Data Sheet – DRAFT ONLY 6 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Reference Circuit S3 8 7 3 4 1 R805 10 Ohm S2 R802 1200 Ohm 1 R804 2000 Ohm C103 10000 pF TL110 TL124 TL107 TL109 3 1 2 TL133 3 1 2 2 TL108 TL135 4 S R801 1300 Ohm R101 10 Ohm TL134 3 1 3 E C109 10000 pF TL131 TL102 TL132 3 2 1 R103 10 Ohm TL118 C802 100000 pF 2 C 1 B C110 4.7 pF TL101 3 1 TL123 C104 56 pF C801 1000 pF S1 R102 5100 Ohm C102 4710000 pF 5 2 3 C101 33 pF C804 1000 pF 6 2 C803 1000 pF C805 100000 pF R803 10 Ohm TL114 2 TL127 3 1 V PORT DD 3 2 TL128 1 3 2 TL120 TL136 TL121 b0 915 07 f h_B D i n_ 2- 2 8- 11 TL140 TL104 C106 3.9 pF TL126 PORT RF_IN TL106 TL141 C107 56 pF TL103 TL129 TL130 TL116 TL119 3 2 TL111 TL113 1 TL137 3 1 2 2 TL125 TL112 PORT GATE DUT 2 1 1 3 TL115 TL117 C105 3.3 pF C108 1.5 pF ε r = 3.48 H = 20 mil RO/RO4350B1 2 TL139 3 1 TL138 TL122 TL105 TL142 Reference circuit input schematic for ƒ = 960 MHz C221 10000000 pF C206 10000000 pF TL240 TL238 2 TL207 3 2 3 C208 10000000 pF C216 1000000 pF TL203 2 3 1 1 C201 100000000 pF C222 10000000 pF TL220 3 2 1 TL236 3 2 TL234 TL239 C223 10000000 pF 3 1 2 1 1 4 C214 10000 pF TL218 PORT DRAIN DUT C215 1 pF 5 TL229 DRAIN PORT 2DUT TL221 TL223 C202 1.2 pF TL237 2 TL208 TL210 TL211 TL217 C205 56 pF TL219 TL209 TL225 TL235 TL224 1 TL233 3 2 3 1 1 2 3 PORT DUT DRAIN 1 4 C210 1 pF C209 5.6 pF TL232 C207 0.2 pF TL205 PORT 1 3 DRAIN DUT 4 TL231 2 TL201 b 09 150 7f h _B D out _2- 2 8- 1 1 C203 3.9 pF TL204 1 3 2 TL222 TL228 C204 10000 pF TL214 2 3 2 1 TL226 TL202 TL206 4 1 2 3 3 1 TL213 1 2 3 TL212 TL230 TL227 TL215 1 2 3 3 2 C212 10000000 pF C217 10000000 pF C218 1000000 pF C211 10000000 pF C220 10000000 pF 1 TL216 C219 10000000 pF ε r = 3.48 H = 20 mil RO/RO4350B1 C213 100000000 pF Reference circuit output schematic for ƒ = 960 MHz Data Sheet – DRAFT ONLY 7 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Reference Circuit (cont.) DUT Test Fixture Part No. PCB Gerber Files PTFB091507FH LTN/PTFB091507FH Rogers RO4350, 0.508 mm [0.020"] thick, 2 oz. copper, r = 3.48 Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower ELectrical Characteristics at 960 MHz Microstrip Characteristics Dimensions: mm Dimensions: mils TL102 0.004 , 26.8 W = 2.79, L = 0.76 W = 110, L = 30 TL103 0.007 , 39.1 W = 1.68, L = 1.27 W = 66, L = 50 TL111 0.004 , 5.3 W1 = 17.78, W2 = 17.78, W3 = 0.76 W1 = 700, W2 = 700, W3 = 30 TL114 0.003 , 63.9 W = 0.76, L = 0.51 W = 30, L = 20 TL115 0.026 , 51.5 W = 1.10, L = 4.88 W = 44, L = 192 TL116 0.036 , 39.1 W = 1.68, L = 6.74 W = 66, L = 266 TL117 0.042 , 51.5 W = 1.10, L = 8.00 W = 44, L = 315 TL118 0.007 , 63.9 W = 0.76, L = 1.27 W = 30, L = 50 TL119 0.035 , 39.1 W = 1.68, L = 6.49 W = 66, L = 256 TL120 0.015 , 63.9 W = 0.76, L = 2.92 W = 30, L = 115 TL121 0.100 , 63.9 W = 0.76, L = 19.05 W = 30, L = 750 TL122 0.005 , 51.5 W = 1.10, L = 1.02 W = 44, L = 40 TL123 0.008 , 63.9 W = 0.76, L = 1.52 W = 30, L = 60 TL124 0.006 , 26.8 W = 2.79, L = 1.04 W = 110, L = 41 TL125 0.102 , 5.3 W = 17.78, L = 17.55 W = 700, L = 691 TL126 0.040 , 51.5 W = 1.10, L = 7.57 W = 44, L = 298 TL127 0.004 , 26.8 W = 2.79, L = 0.76 W = 110, L = 30 TL130 0.011 , 39.1 W1 = 1.68, W2 = 1.68, W3 = 2.03 W1 = 66, W2 = 66, W3 = 80 TL134 0.007 , 26.8 W = 2.79, L = 1.19 W = 110, L = 47 TL136 0.008 , 63.9 W = 0.76, L = 1.52 W = 30, L = 60 TL137 0.016 , 5.3 W1 = 17.78, W2 = 17.78, W3 = 2.79 W1 = 700, W2 = 700, W3 = 110 TL138 0.002 , 51.5 W = 1.10, L = 0.33 W = 44, L = 13 TL139 0.015 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 2.79 W1 = 44, W2 = 44, W3 = 110 TL201 0.004 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 0.76 W1 = 44, W2 = 44, W3 = 30 TL202, 207 0.010 , 20.9 W1 = 3.81, W2 = 1.83, W3 = 3.81, W4 = 1.83 W1 = 150, W2 = 72, W3 = 150, W4 = 72 TL203 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110 TL204 0.014 , 51.5 W = 1.10, L = 2.67 W = 44, L = 105 TL205 0.015 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 2.79 W1 = 44, W2 = 44, W3 = 110 TL206 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110 TL210 0.109 , 5.7 W = 16.51, L = 18.62 W = 650, L = 733 TL211 0.016 , 5.7 W1 = 16.51, W2 = 16.51, W3 = 2.79 W1 = 650, W2 = 650, W3 = 110 TL212 0.014 , 20.9 W = 3.81, L = 2.51 W = 150, L = 99 TL213 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110 TL214 0.007 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 1.27 W1 = 150, W2 = 150, W3 = 50 table continued on next page Data Sheet – DRAFT ONLY 8 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Microstrip Characteristics Dimensions: mm Dimensions: mils TL215 0.021 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150 TL216 0.041 , 20.9 W = 3.81, L = 7.29 W = 150, L = 287 TL217 0.008 , 39.1 W = 1.68, L = 1.52 W = 66, L = 60 TL218 0.016 , 16.5 W = 5.08, L = 2.90 W = 200, L = 114 TL219 0.011 , 39.1 W = 1.68, L = 2.03 W = 66, L = 80 TL220 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110 TL221 0.037 , 5.7 W = 16.51, L = 6.38 W = 650, L = 251 TL222 0.016 , 16.5 W = 5.08, L = 2.89 W = 200, L = 114 TL223 0.011 , 5.7 W1 = 16.51, W2 = 1.83, W3 = 16.51, W4 = 1.83 W1 = W1, W2 = 72, W3 = 650, W4 = 72 TL228 0.021 , 16.5 W1 = 5.08, W2 = 5.08, W3 = 3.81 W1 = 200, W2 = 200, W3 = 150 TL230 0.006 , 51.5 W = 1.10, L = 1.14 W = 44, L = 45 TL231 0.060 , 51.5 W = 1.10, L = 11.3 W = 44, L = 445 TL232 0.027 , 51.5 W = 1.10, L = 5.08 W = 44, L = 200 TL233 0.006 , 51.5 W = 1.10, L = 1.12 W = 44, L = 44 TL234 0.041 , 20.9 W = 3.81, L = 7.29 W = 150, L = 287 TL235 0.010 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 1.91 W1 = 44, W2 = 44, W3 = 75 TL236 0.014 , 20.9 W = 3.81, L = 2.51 W = 150, L = 99 TL237 0.052 , 5.7 W = 16.51, L = 8.89 W = 650, L = 350 TL238 0.021 , 16.5 W1 = 5.08, W2 = 5.08, W3 = 3.81 W1 = 200, W2 = 200, W3 = 150 TL239 0.021 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150 TL240 0.007 l, 20.9 W W1 = 3.81, W2 = 3.81, W3 = 1.27 W1 = 150, W2 = 150, W3 = 50 Data Sheet – DRAFT ONLY 9 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Reference Circuit (cont.) C803 C804 R801 C801 C805 C102 C216 C222 C221 C201 C206 C208 S1 S3 R803 VDD 22 HHD 4V6 R805 C101 C110 C109 C104 C103 R102 C223 C802 C215 R103 C205 C214 C202 RF_IN RF_OUT C107 C204 C106 C200 C210 C108 VDD C207 C105 C219 C203 22 HHD 4V6 C213 C211 C212 C217 C220 C218 PTFB091507_IN_01 R04350, .020 (62) PTFB091507_IN_01 R04350, .020 (62) b 091507 f h _C D_ 3- 08 - 11 Reference circuit board layout (not to scale) Component Description Suggested Supplier C101 Chip capacitor, 33 pF ATC P/N or Comment ATC100B330JW500XB C102 Chip capacitor, 4.71 µF Digi-Key 493-2372-2-ND C103 Capacitor, 10 nF ATC ATC200B103MW50XC C104, C107 Chip capacitor, 56 pF ATC ATC100B560JW500XB C105 Chip capacitor, 3.3 pF ATC ATC100B3R3CW500XB C106, C203 Chip capacitor, 3.9 pF ATC ATC100B3R9CW500XB C108 Chip capacitor, 1.5 pF ATC ATC100B1R5CW500XB C109 Capacitor, 10 nF ATC ATC200B103MW50XC C110 Chip capacitor, 4.7 pF ATC ATC100B4R7CW500XB C201, C213 Electrolytic cap., 100 uF, 50 V Digi-Key PCE4442TR-ND C202 Chip capacitor, 1.2 pF ATC ATC100B1R2CW500XB C204 Capacitor, 10 nF ATC ATC200B103MW50XC C205 Chip capacitor, 56 pF ATC ATC100B560JW500XB C206, C208, C211, C212, C217, C220, C221, C222 Capacitor, 10 µF Digi-Key 587-1818-2-ND C207 Chip capacitor, 0.2 pF ATC ATC100B0R2CW500XB C209 Chip capacitor, 5.6 pF ATC ATC100B5R6CW500XB C210 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB table continued on next page Data Sheet – DRAFT ONLY 10 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Supplier P/N or Comment C214 Capacitor, 10 nF ATC ATC200B103MW50XC C215 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB C216, C218 Chip capacitor, 1 µF Digi-Key 478-3993-2-ND C219, C223 Tantalum capacitor, 10 µF, 35 V Garrett Electronics 281M5002106K C801, C803, C804 Chip capacitor, 1 nF Digi-Key PCC1772CT-ND C802, 805 Chip capacitor, 100 nF Digi-Key PCC104BCT-ND R101 Resistor, 10 Digi-Key P10ECT-ND R102 Resistor, 5.1 Digi-Key P5.1KECT-ND R103 Resistor, 10 Digi-Key P10ECT-ND R801 Resistor, 1.3k Digi-Key P1.3KGCT-ND R802 Resistor, 1.2k Digi-Key P1.2KGCT-ND R803, R805 Resistor, 10 Digi-Key P10ECT-ND R804 Resistor, 2k Digi-Key P2.0KECT-ND S1 Transistor Digi-Key BCP5616-ND S2 Potentiometer, 2k Digi-Key 3224W-202ECT-ND S3 Voltage regulator Digi-Key LM78L05ACM-ND See package outline specifications on next page Data Sheet – DRAFT ONLY 11 of 13 Rev. 03, 2011-03-14 PTFB091507FH Confidential, Limited Internal Distribution Package Outline Specifications Package H-34288-4/2 22.860 [.900] 45° X 2.032 [45° X .080] 2X 5.080 [.200] 2X 1.143 [.045] C L 2X 30° V D V 9.779 [.385] 9.398 [.370] C L 4X R0.508+.381 -.127 R.020+.015 -.005 [ 4.889±.510 [.192±.020] 19.558±.510 [.770±.020] G ] 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352±.200 [.880±.008] [ ] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 d . wg 1.575 [.062] (SPH) C L 1.016 [.040] 23.114 [.910] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [.005] unless specified otherwise. 4. Pins: D - drain; S - source; G - gate; V - VDD. 5. Lead thickness: 0.10 +0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet – DRAFT ONLY 12 of 13 Rev. 03, 2011-03-14 PTFB091507FH V1 Confidential, Limited Internal Distribution Revision History: Previous Revision: Page all 2011-03-14 2010-09-02, Advance Specification Subjects (major changes since last revision) Characterization completed, product released. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2011-03-14 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet – DRAFT ONLY 13 of 13 Rev. 03, 2011-03-14