IPI076N12N3 G OptiMOSTM3 Power-Transistor IPP076N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 120 V R DS(on)max 7.6 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI076N12N3 G IPP076N12N3 G Package PG-TO262-3 PG-TO220-3 Marking 076N12N 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 100 T C=100 °C 76 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 230 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 188 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.3 55/175/56 page 1 2009-07-09 IPI076N12N3 G Parameter IPP076N12N3 G Values Symbol Conditions Unit min. typ. max. - - 0.8 minimal footprint - - 62 6 cm2 cooling area 5) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient 4) - R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=130 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 I GSS V GS=20 V, V DS=0 V - 1 100 R DS(on) V GS=10 V, I D=100 A - 6.5 7.6 - 1.5 - Ω 58 116 - S Gate-source leakage current Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A V µA nA J-STD20 and JESD22 2) See figure 3 3) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2009-07-09 IPI076N12N3 G Parameter IPP076N12N3 G Values Symbol Conditions Unit min. typ. max. - 4990 6640 - 632 841 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 31 - Turn-on delay time t d(on) - 24 - Rise time tr - 50 - Turn-off delay time t d(off) - 39 - Fall time tf - 10 - Gate to source charge Q gs - 27 - Gate to drain charge Q gd - 19 - - 31 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=100 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=60 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 76 101 Gate plateau voltage V plateau - 5.4 - Output charge Q oss - 87 116 nC - - 100 A - - 400 - 1 1.2 - 122 ns - 291 nC V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.3 T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=60 V, I F=I S, di F/dt =100 A/µs V See figure 16 for gate charge parameter definition page 3 2009-07-09 IPI076N12N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 200 IPP076N12N3 G 120 100 160 80 I D [A] P tot [W] 120 60 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 10 µs 10 2 0.5 100 µs 1 ms 10 Z thJC [K/W] I D [A] DC 0.2 10 ms 1 10-1 0.1 0.05 0.02 0.01 100 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.3 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-07-09 IPI076N12N3 G IPP076N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 350 20 10 V 4.5 V 8V 5V 5.5 V 7V 300 15 250 R DS(on) [mΩ] 6.5 V I D [A] 200 150 6V 10 6V 10 V 100 5 5.5 V 50 5V 4.5 V 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 140 150 120 100 g fs [S] I D [A] 100 175 °C 80 60 25 °C 50 40 20 0 0 0 2 4 6 8 Rev. 2.3 0 40 80 120 160 I D [A] V GS [V] page 5 2009-07-09 IPI076N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP076N12N3 G parameter: I D 20 4 3.5 1300 µA 3 130 µA 2.5 10 V GS(th) [V] R DS(on) [mΩ] 15 98 % typ 2 1.5 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 25 °C Coss 103 102 25 °C, 98% I F [A] C [pF] 175 °C 175 °C, 98% Crss 2 101 101 100 10 0 20 40 60 80 V DS [V] Rev. 2.3 0 0.5 1 1.5 2 V SD [V] page 6 2009-07-09 IPI076N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=75 A pulsed parameter: T j(start) parameter: V DD 10 3 IPP076N12N3 G 10 8 96 V 60 V 102 25 °C 100 °C 150 °C 24V V GS [V] I AS [A] 6 4 101 2 0 0 100 100 10 t AV [µs] 1 10 2 10 15 Drain-source breakdown voltage 20 40 60 80 Q gate [nC] 3 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 V BR(DSS) [V] 125 120 V g s(th) 115 110 Q g(th) Q sw Q gs 105 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.3 page 7 2009-07-09 IPI076N12N3 G IPP076N12N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2009-07-09 IPI076N12N3 G IPP076N12N3 G PG-TO262-3-1 (I²PAK) Rev. 2.3 page 9 2009-07-09 IPI076N12N3 G IPP076N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 10 2009-07-09