TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-214AC (SMA) Cathode Band Breakdown Voltage 6.8 to 43.0V Peak Pulse Power 400W * d e t n e t a P Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.060 MIN (1.52 MIN) 0.094 MAX (2.38 MAX) Dimensions in inches and (millimeters) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.050 MIN (1.27 MIN) 0.220 REF (5.58) 0.090 (2.29) 0.078 (1.98) *Patent #’s 4,980,315 5,166,769 5,278,094 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Available in uni-directional only Mechanical Data Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002 oz., 0.064 g Packaging codes/options: 5A/7.5K per 13" Reel (12mm Tape), 90K/box 11/1.8K per 7" Reel (12mm Tape), 36K/box Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Ideal for automated placement • Low profile package • Built-in strain relief • Exclusive patented PAR® oxide passivated chip construction • 400W peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% • Excellent clamping capability • Low incremental surge resistance • Very fast response time • For devices with V(BR) ≥ 10V ID are typically less than 1.0mA at TA = 150°C • Designed for under the hood surface mount applications • High temperature soldering: 250°C/10 seconds at terminals Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Value Unit Peak power dissipation with a 10/1000µs waveform(1)(2) (Fig. 3) PPPM Minimum 400 W Peak power pulse current with a 10/1000µs waveform(1) (Fig. 1) IPPM See Next Table A IFSM 40 A VF 3.5 V TJ, TSTG –65 to +185 °C Peak forward surge current 8.3ms single half sine-wave(3) (3) Maximum instantaneous forward voltage at 25A Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2 (2) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 0.5mm) copper pads attached to each terminal (3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum Document Number 88405 06-May-02 www.vishay.com 1 TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T A Device TPSMA6.8 TPSMA6.8A TPSMA7.5 TPSMA7.5A TPSMA8.2 TPSMA8.2A TPSMA9.1 TPSMA9.1A TPSMA10 TPSMA10A TPSMA11 TPSMA11A TPSMA12 TPSMA12A TPSMA13 TPSMA13A TPSMA15 TPSMA15A TPSMA16 TPSMA16A TPSMA18 TPSMA18A TPSMA20 TPSMA20A TPSMA22 TPSMA22A TPSMA24 TPSMA24A TPSMA27 TPSMA27A TPSMA30 TPSMA30A TPSMA33 TPSMA33A TPSMA36 TPSMA36A TPSMA39 TPSMA39A TPSMA43 TPSMA43A Device Marking Code ADP AEP AFP AGP AHP AKP ALP AMP ANP APP AQP ARP ASP ATP AUP AVP AWP AXP AYP AZP BDP BEP BFP BGP BHP BKP BLP BMP BNP BPP BQP BRP BSP BTP BUP BVP BWP BXP BYP BZP = 25°C unless otherwise noted) Breakdown Voltage V(BR)(1) at IT (V) Min. Max. Test Current IT (mA) 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.50 10.80 11.40 11.70 12.40 13.50 14.30 14.40 15.20 16.20 17.10 18.00 19.00 19.80 20.90 21.60 22.80 24.30 25.70 27.00 28.50 29.70 31.40 32.40 34.20 35.10 37.10 38.70 40.90 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.50 12.10 11.60 13.20 12.60 14.30 13.70 16.30 15.80 17.60 16.80 19.80 18.90 22.00 21.00 24.20 23.10 26.40 25.20 29.70 28.40 33.00 31.50 36.30 34.70 39.60 37.80 42.90 41.00 47.30 45.20 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (Volts) Maximum Reverse Leakage at VWM IR (µA) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.65 8.92 9.40 9.72 10.20 10.50 11.10 12.10 12.80 12.90 13.60 14.50 15.30 16.20 17.10 17.80 18.80 19.40 20.50 21.80 23.10 24.30 25.60 26.80 28.20 29.10 30.80 31.60 33.30 34.80 36.80 300 300 150 150 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TJ = 150°C Maximum Maximum Peak Pulse Reverse Surge Leakage Current at VWM IPPM (Note 2) ID (µA) (Amps) 1000 1000 500 500 200 200 50 50 20 20 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 Maximum Clamping Voltage at IPPM Vc (Volts) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13. 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47. 45.7 52.0 49.9 56.4 53.9 61.9 59.3 Notes: (1) V(BR) measured after IT applied for 300µs, IT=square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88405 06-May-02 TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig.1 – Peak Pulse Power Rating Curve TA = 25°C Non-repetitive pulse waveform shown in Fig. 3 10 1.0 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms Fig. 2 – Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) PPPM, Peak Power (KW) 100 100 75 50 25 0 10ms 0 td, Pulse Width, sec. 100 150 200 TA, Ambient Temperature (°C) Fig. 4 – Typical Junction Capacitance Fig. 3 – Pulse Waveform 10,000 150 TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10µsec. Peak Value IPPM 100 CJ, Junction Capacitance, pF IPPM — Peak Pulse Current, % IRSM 50 Half Value — IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A. TJ = 25°C f = 1 MHz Vsig = 50mVp-p VR measured at zero bias 1,000 100 VR measured at stand-off voltage, VWM td 0 0 1.0 2.0 3.0 4.0 10 1 10 100 200 V(BR), Breakdown Voltage (V) t — Time (ms) Fig. 5 – Maximum Non-Repetitive Peak Forward Surge Current IFSM, Peak Forward Surge Current (A) 200 TJ = TJ max 8.3ms single half sine-wave (JEDEC method) 100 50 10 1 5 10 50 100 Number of Cycles at 60 Hz Document Number 88405 06-May-02 www.vishay.com 3