VISHAY 60APU04PBF

VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-247AC modified
Cathode
to base
2
TO-247AC
• Compliant to RoHS Directive 2002/95/EC
Cathode
to base
2
• Designed
and
JEDEC-JESD47
qualified
according
to
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
BENEFITS
1
Cathode
3
Anode
3
Anode
1
Anode
VS-60EPU04PbF
VS-60EPU04-N3
• Reduced RFI and EMI
VS-60APU04PbF
VS-60APU04-N3
• Higher frequency operation
• Reduced snubbing
PRODUCT SUMMARY
• Reduced parts count
Package
TO-247AC,
TO-247AC modified (2 pins)
IF(AV)
60 A
VR
400 V
VF at IF
1.25 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
TEST CONDITIONS
VR
VALUES
UNITS
400
V
Continuous forward current
IF(AV)
TC = 127 °C
60
Single pulse forward current
IFSM
TC = 25 °C
600
IFRM
Square wave, 20 kHz
Maximum repetitive forward current
Operating junction and storage temperatures
A
120
TJ, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
400
-
-
IF = 60 A
-
1.05
1.25
IF = 60 A, TJ = 175 °C
-
0.87
1.03
IF = 60 A, TJ = 125 °C
-
0.93
1.10
VR = VR rated
-
-
50
μA
TJ = 150 °C, VR = VR rated
-
-
2
mA
IR = 100 μA
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
50
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Revision: 15-Aug-11
Document Number: 94022
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
MIN.
TYP.
MAX.
-
50
60
UNITS
TJ = 25 °C
-
85
-
TJ = 125 °C
-
145
-
-
8.8
-
-
15.4
-
TJ = 25 °C
-
375
-
TJ = 125 °C
-
1120
-
MIN.
TYP.
MAX.
-
-
0.70
-
0.2
-
-
5.5
-
g
-
0.2
-
oz.
1.2
(10)
-
2.4
(20)
N·m
(lbf · in)
TJ = 25 °C
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Revision: 15-Aug-11
UNITS
K/W
Case style TO-247AC modified
60EPU04
Case style TO-247AC
60APU04
Document Number: 94022
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
1000
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
1000
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
100
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.5
0
2
1.5
1
0
2.5
100
300
200
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
100
10
1000
ZthJC - Thermal Impedance (°C/W)
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-11
Document Number: 94022
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
200
180
140
Square wave (D = 0.50)
80 % rated VR applied
120
IF = 120 A
IF = 60 A
IF = 40 A
160
DC
140
120
100
100
80
See note (1)
60
100
80
0
20
40
60
80
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
3500
100
RMS limit
3000
80
VR = 400 V
TJ = 125 °C
TJ = 25 °C
2500
60
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
20
Qrr (nC)
Average Power Loss (W)
VR = 400 V
TJ = 125 °C
TJ = 25 °C
160
trr (ns)
Allowable Case Temperature (°C)
180
DC
20
40
60
80
1500
IF = 40 A
IF = 60 A
IF = 120 A
1000
500
0
0
2000
100
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 15-Aug-11
Document Number: 94022
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Aug-11
Document Number: 94022
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
U
04
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = Single diode
A = Single diode, 3 pins
4
-
Package:
P = TO-247AC (modified)
5
-
Type of silicon:
U = Ultrafast recovery
6
-
Voltage rating (04 = 400 V)
7
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-60EPU04PbF
25
500
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-60EPU04-N3
25
500
Antistatic plastic tube
VS-60APU04PbF
25
500
Antistatic plastic tube
VS-60APU04-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 15-Aug-11
TO-247AC modified
www.vishay.com/doc?95253
TO-247AC
www.vishay.com/doc?95223
TO-247AC modified PbF
www.vishay.com/doc?95255
TO-247AC modified -N3
www.vishay.com/doc?95442
TO-247ACPbF
www.vishay.com/doc?95226
TO-247AC-N3
www.vishay.com/doc?95007
Document Number: 94022
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) ΦP
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
ΦP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
Planting
View A - A
C
2x e
A1
b4
0.10 M C A M
(4)
E1
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
K
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000