FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807 Generic Copy Issue Date: 9-Feb-2012 TITLE: NCP2860 and NCP571 Family Transfer Wafer fab from Aizu to Gresham PROPOSED FIRST SHIP DATE: 09-May-2012 AFFECTED CHANGE CATEGORY(S): Wafer Fab Change FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or <[email protected]> ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce the Wafer Fab qualification for the NCP2860 and NCP571 product families. These device families are currently qualified at ON Semiconductor’s Aizu wafer fab facility located in Aizu, Japan and are now qualified at ON Semiconductor’s Gresham wafer fabrication facility located in Gresham, Oregon. Upon expiration (or approval) of this Final PCN, devices may be supplied by either wafer fab. The Gresham wafer fab is compliant to ISO9001:2008, ISO/TS16949:2009, and ISO14001:2004. The NCP2860 and NCP571 families run on the Aizu ACMOS1 process. The same ACMOS1 process has been transferred to and successfully qualified at the Gresham wafer fab. No device design changes have been made. Device performance is the same for Aizu and Gresham-sourced devices. The NCP2860 and NCP571 families will continue to be assembled and tested in existing, qualified locations. No changes to packaging will occur as a result of this fab qualification. No change to the device data sheets will be made. Issue Date: 09-Feb-2012 Rev. 06-Jan-2010 Page 1 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807 RELIABILITY DATA SUMMARY: Qualification devices consisted of 3 parts that will generically qualify all the devices which utilize the ACMOS1 wafer technology process. All testing was performed per AECQ-100 requirements. NCP551SN30T1G Test Name Prep Sample preparation and initial part testing Various --- ELFR Early Life Failure Rate TA = 125°C c = 0, 25°C & 125°C B1 HTOL High Temp Operating Live Test TA = 125°C ; Tj=140°C c = 0, 25°C & 125°C A1 PC MSL1 Preconditioning 3 IR @ 260 deg C c = 0, 25°C A3 PCUHST Precon. - Unbias HAST TA= +130C, RH = 85%, PSIG= 18.8 c = 0, 25°C -65/+150 °C, Air to Air # 1 A4 PC-TC Precon. - Temp Cycle Test Conditions Test Results (rej/ ss) (rej/ ss) Read Point Initial Electrical Lot A Lot B done done 48 hrs 0/800 504hrs. 0/80 0/79 1008hrs. 0/80 0/79 0/262 0/262 96hrs 0/84 0/84 c = 0, 25°C & 125°C 500cyc 1000cyc 0/84 0/84 0/84 0/84 End Point Req’s PCHAST Precond. - HAST TA= +130C, RH = 85%, PSIG= 18.8, bias c = 0, 25°C & 125°C 96 hrs 0/84 0/83 SAT Scanning Acoustic Tomography Compare for Delamination before and after PC Compare to existing data Results Done Done C1 WBS Wire Bond Shear Results Cpk>1.33 C2 WBP Wire Bond Pull Strength, Condition C >3gm Pull Force Results Cpk>1.33 E2 ESD Electro-static Discharge Human Body Model (HBM) c = 0, 25°C & 125°C Results 2kV E2 ESD Electro-static Discharge Machine Model (MM) c = 0, 25°C & 125°C Results 200V E3 ESD Electro-static Discharge Charge device Model (CDM) c = 0, 25°C & 125°C Results 2kV E4 LU Latch-up Class II c = 0, 25°C & 125°C Results LU+>100mA LU->100mA E5 ED Electrical Distribution -40°C, 25°C, 85°C, 125°C NA Results Cpk > 1.67 A4 Cpk>1.33 Table 1: Reliability Evaluation Results for Device NCP551SN30T1G Qualification Points in BOLD Issue Date: 09-Feb-2012 Rev. 06-Jan-2010 Page 2 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807 NCS2002NS1T1G # Test Name 1 Prep 2 HTOL 3 PC End Point Req’s Test Conditions Sample preparation various and initial part testing High Temp Op Life TA = 145°C for 504 hours MSL1 Preconditioning --c = 0, Room,125C Test Results (rej/ ss) (rej/ ss) Read Point Initial Electrical 504 Hrs Lot A done Lot 2 done 0/80 0/80 1008 Hrs 0/80 0/80 3 IR @ 260 deg C c = 0, Room -65/+150 C c = 0, Room, 125C 500 cyc 1000 cyc 0/84 0/84 0/84 0/84 4 TC-PC Precond. Temp Cycle 5 HASTPC Precond. HAST TA= +130C, RH = 85%, PSIG= 18.8, bias c = 0, Room,125C 96 hrs 0/84 0/84 6 AC-PC Precond. Autoclave 121°C/100% RH/15psig c = 0, Room 96 hrs 0/84 0/84 7 SAT Scanning Acoustic Tomography Compare for Delamination before and after PC Compare to existing data Results 0/10 0/10 8 ELFR Early Life Failure Rate Tj = 125°C for 48 hrs c=0,Room, 125C 48Hrs 0/800 NA NCP2860DM277R2G # Test Name End Point Req’s Test Conditions Test Results Read Point (rej/ ss) (rej/ ss) (rej/ ss) (rej/ ss) Lot A Lot B Lot C Lot D Initial Electrical done done done done 504hrs. 0/84 0/84 0/84 0/84 1008hrs. 0/84 0/84 0/84 0/84 0/178 0/178 0/178 0/178 Sample preparation and initial part testing Various --- B1 HTOL High Temp Operating Live Test TA = 125°C ; Tj=132°C c = 0, 25°C A1 MSL1 Preconditioning 3 IR @ 260 deg C c = 0, 25°C PC- Precon. - Unbias UHST HAST TA= +130C, RH = 85%, PSIG= 18.8 c = 0, 25°C 96hrs 0/84 0/84 0/84 0/84 -65/+150 °C, Air to Air c = 0, 25°C 500cyc 1000cyc 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 Compare to existing data Results done done done done 1 A3 A4 Prep PC PCTC SAT Precon. - Temp Cycle Compare for Scanning Acoustic Delamination before Tomography and after PC E2 ESD Electro-static Discharge Human Body Model (HBM) c = 0, 25°C Results 4kV 4kV 4kV E2 ESD Electro-static Discharge Machine Model (MM) c = 0, 25°C Results 200V 200V 200V E3 ESD Electro-static Discharge Charge device Model (CDM) c = 0, 25°C Results 2kV 2kV 2kV E4 LU Latch-up Class II c = 0, 25°C & 85°C Results E5 ED Electrical Distribution -40°C, -25°C, 25°C, 85°C, 125°C NA Results Issue Date: 09-Feb-2012 Rev. 06-Jan-2010 LU+>100mA LU+>100mA LU+>100mA LU->100mA LU->100mA LU->100mA Cpk>1.67 Cpk>1.67 Cpk>1.67 Page 3 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807 ELECTRICAL CHARACTERISTIC SUMMARY: No change to the device data sheets is being made. All parametric performance and limits remain the same CHANGED PART IDENTIFICATION: No change to current part marking will occur. Marking traceability codes will be able to identify wafer fab die source. List of affected General Parts: NCP2860DM277R2G NCP2860DMADJR2G NCP571MN08TBG NCP571MN09TBG NCP571MN10TBG NCP571MN12TBG NCP571SN08T1G NCP571SN09T1G NCP571SN10T1G NCP571SN12T1G NCV571MN08TBG NCV571MN09TBG NCV571MN10TBG NCV571MN12TBG NCV571SN08T1G NCV571SN09T1G NCV571SN10T1G NCV571SN12T1G Issue Date: 09-Feb-2012 Rev. 06-Jan-2010 Page 4 of 4