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Final Product/Process Change Notification
Document # : FPCN20888X
Issue Date: 21 May 2015
Title of Change:
Wafer Capacity Expansion for Trench 3 Schottky MOSFETs
Proposed first ship date:
28 August 2015
Contact information:
Contact your local ON Semiconductor Sales Office or Melyssa Hutchins<[email protected]>
Samples:
Contact your local ON Semiconductor Sales Office or Brian Goodburn <[email protected]>
Additional Reliability Data:
Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected] >
Type of notification:
This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior
to implementation of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in
writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
Change Part Identification:
There will be change to the finished good part marking on product assembled with the Trench Die fabricated
from the UMC Wafer Fab facility. Full traceability of the die manufacturing facility will be available through
the lot number recorded on the shipping labels.
Change category(s):
Wafer Fab Change
Assembly Change
Test Change
Sites Affected:
All site(s)
not applicable
ON Semiconductor site(s) :
External Foundry/Subcon site(s):
Manufacturing Site Change/Addition
Manufacturing Process Change
Material Change
Site 1
United Microelectronics Corp (UMC)
Product specific change
Datasheet/Product Doc change
Shipping/Packaging/Marking
Other: _______________________
Site 2
Description and Purpose:
This Product Change Notice is to announce that ON Semiconductor is adding wafer fabrication capacity for their Trench 3 schottky MOSFET
technology silicon platforms. ON Semiconductor has qualified United Microelectronics Corp (UMC), a wafer fabrication facility located in Taiwan.
Upon expiration of this FPCN, ON Semiconductor will supply parts utilizing the UMC fab. Device quality and reliability will continue to meet ON
Semiconductors high standards.
TEM001092 Rev. D
Page 1 of 2
Final Product/Process Change Notification
Document # : FPCN20888X
Issue Date: 21 May 2015
Reliability Data Summary:
Test
Prep
HTRB
Name
Test Conditions
Sample preparation
and initial part testing
High Temp Reverse
Bias
various
TA = 150°C , Vgss = 100%
of max rated
TA = 150°C , Vdss = 80%
of max rated
Ta=+25°C, delta
Tj=100°C
On/of = 2 min
Test Results
Read Point
Initial
Electrical
(rej/ ss)
NTMFS4933
(rej/ ss)
NTMFS4933
(rej/ ss)
NTMFS4935
(rej/ ss)
NTMFS4935
done
done
done
done
504 Hrs
0/77
0/77
0/77
0/77
504 Hrs
0/77
0/77
0/77
0/77
7500 Hrs
0/77
0/77
0/77
0/77
HTGB
High Temp Gate Bias
MSL 1 PC
- IOL
Intermittent Operating
Life + PC
MSL 1 PC
- TC
Temperature Cycling +
PC
-55 °C to + 150°C
500 Cyc
0/77
0/77
0/77
0/77
MSL 1 PC
- AC
Autoclave + PC
121°C/100% RH/15psig
96 Hrs
0/77
0/77
0/77
0/77
MSL 1 PC
- HAST
Highly Accelerated
Stress Test
Temp= +131°C, RH=85%
, p = 18.8 psig, bias
96 Hrs
0/77
0/77
0/77
0/77
Test
Prep
HTRB
Name
Sample
preparation
and initial
part testing
High Temp
Reverse Bias
Test
Conditions
End
Point
Req’s
Test Results
(rej/ ss)
(rej/ ss)
(rej/ ss)
(rej/ ss)
Read Point
Lot A
NTMFS4982NF
Lot B
NTMFS4982NF
Lot C
NTMFS4982NF
NTMFS4982NF
Control
various
---
Initial Electrical
done
done
done
done
Tj = 150°C for
1008 hours
c = 0,
Room
168 hr
0/84
0/84
0/84
0/84
504 Hrs
0/84
0/84
0/84
0/84
1008 Hrs
0/84
0/84
0/84
0/84
Electrical Characteristic Summary:
There is no change in electrical parametric performance. Characterization data is available upon request.
List of affected Standard Parts:
NTMFD4901NFT1G
NTMFD4902NFT1G
NTMFS4982NFT1G
NTMFS4983NFT1G
NTMFS4985NFT1G
NTMFS4985NFT3G
TEM001092 Rev. D
Page 2 of 2
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