VISHAY 1N1185A

1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
• Compliant to RoHS directive 2002/95/EC
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
35 A/40 A/60 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IFSM
I2 t
TEST CONDITIONS
TC
1N3765
1N1183A
1N2128A
35 (1)
35 (1)
40 (1)
60 (1)
A
140 (1)
140 (1)
150 (1)
140 (1)
°C
50 Hz
480
380
765
860
60 Hz
500 (1)
400 (1)
800 (1)
900 (1)
50 Hz
1140
730
2900
3700
60 Hz
1040
670
2650
3400
I2√t
VRRM
1N1183
16 100
Range
50 to 600
10 300
(1)
700 to 1000
41 000
(1)
50 to 600
UNITS
A
A2s
A2√s
52 500
(1)
50 to 600
(1)
V
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
TYPE NUMBER
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
1N1183
1N1183A
1N2128A
50 (1)
50 (1)
1N1184
1N1184A
1N2129A
100 (1)
100 (1)
1N1185
1N1185A
1N2130A
150 (1)
150 (1)
1N2131A
200
(1)
200 (1)
300
(1)
300 (1)
400
(1)
400 (1)
500
(1)
500 (1)
600
(1)
600 (1)
700
(1)
700 (1)
800
(1)
800 (1)
900
(1)
900 (1)
1N1186
1N1187
1N1188
1N1189
1N1190
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N3765
1N3766
1N3767
1N3768
1N2133A
1N2135A
1N2137A
1N2138A
1000
(1)
1000 (1)
Notes
(1) JEDEC registered values
(2) For 1N1183 Series and 1N3765 Series T = - 65 °C to 190 °C
C
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
1
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
TEST CONDITIONS
1-phase operation,
180° sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Maximum peak one cycle
non-repetitive surge current
IFSM
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
Maximum
I2t
for fusing
t = 8.3 ms
I2 t
t = 10 ms
Maximum I2t for individual
device fusing
Maximum I2√t for individual
device fusing
Maximum peak forward voltage
at maximum forward current (IFM)
t = 8.3 ms
I2√t (2)
VFM
Following any
rated load
condition and
with rated
VRRM applied
VRRM = 800
VRRM = 900
IR(AV)
35
(1)
140
(1)
35
140
(1)
(1)
40
150
(1)
(1)
60
140
(1)
(1)
480
380
765
860
500 (1)
400 (1)
800 (1)
900 (1)
UNITS
A
°C
A
Following any
rated load
condition and
with ½ VRRM
applied following
surge = 0
With rated VRRM
applied following
surge, initial
TJ = TJ maximum
With VRRM = 0
following surge,
initial TJ =
TJ maximum
t = 0.1 to 10 ms,
VRRM = 0 following surge
TJ = 25 °C
VRRM = 700
Maximum average
reverse current
1N1183 1N3765 1N1183A 1N2128A
Maximum rated IF(AV) and TC
VRRM = 1000
570
455
910
1000
595
475
950
1050
1140
730
2900
3700
1040
670
2650
3400
A2s
1610
1030
4150
5250
1470
940
3750
4750
16 100
10 300
41 500
52 500
A2√s
1.7 (1)
1.8 (1)
1.3 (1)
1.3 (1)
V
110
110
126
188
A
-
5.0 (1)
-
-
-
4.0
(1)
-
-
3.0
(1)
-
-
2.0
(1)
-
-
Maximum rated IF(AV), VRRM and TC
10
(1)
-
2.5
mA
(1)
10 (1)
Notes
(1) JEDEC registered values
(2) I2t for time t = I2√t x √t
x
x
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2
For technical questions, contact: [email protected]
Document Number: 93492
Revision: 25-May-09
1N1183, 1N3765, 1N1183A, 1N2128A Series
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum operating
case temperature range
TC
- 65 to 190 (1)
- 65 to 200
Maximum storage
temperature range
TStg
- 65 to 175 (1)
- 65 to 200
Maximum internal thermal
resistance, junction to case
RthJC
DC operation
Thermal resistance,
case to sink
RthCS
Mounting surface, smooth, flat and greased
°C
1.00 (1)
Lubricated thread, tighting on nut
(2)
0.25
3.4 (30)
2.3 (20)
Not lubricated thread, tighting on hexagon (3)
4.2 (37)
Lubricated thread, tighting on hexagon (3)
3.2 (28)
Approximate weight
Case style
0.65 (1)
°C/W
Not lubricated thread, tighting on nut (2)
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
1.1 (1)
JEDEC
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
Notes
(1) JEDEC registered values
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Document Number: 93492
Revision: 25-May-09
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
For technical questions, contact: [email protected]
www.vishay.com
3
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
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Fig. 6 - Average Forward Current vs. Maximum Allowable
Case Temperature, 1N1183A Series
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
For technical questions, contact: [email protected]
Document Number: 93492
Revision: 25-May-09
1N1183, 1N3765, 1N1183A, 1N2128A Series
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Vishay High Power Products
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Document Number: 93492
Revision: 25-May-09
For technical questions, contact: [email protected]
www.vishay.com
5
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
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www.vishay.com/doc?95360
For technical questions, contact: [email protected]
Document Number: 93492
Revision: 25-May-09
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)
Ø 14.6 (0.57)
6.1 (0.24)
7.0 (0.28)
Ø 4.10 (0.16)
Ø 3.80 (0.15)
1.03 (0.04)
MAX.
4 (0.16) MIN.
25.4 (1.0) MAX.
10.8 (0.43)
11.4 (0.45)
10.7 (0.42)
11.5 (0.45)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.0 (0.04)
MAX.
Document Number: 95360
Revision: 29-Sep-08
17.40 (0.68) MIN.
Across flats
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000