BFP450 High Linearity Silicon Bipolar RF Transistor Datasheet Revision 1.1, 2012-09-11 RF & Protection Devices Edition 2012-09-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP450 BFP450, High Linearity Silicon Bipolar RF Transistor Revision History: 2012-09-11, Revision 1.1 Page Subjects (changes since previous revision) This datasheet replaces the revision from 2010-10-22. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Datasheet 3 Revision 1.1, 2012-09-11 BFP450 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Datasheet 4 11 11 11 12 16 19 Revision 1.1, 2012-09-11 BFP450 List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 5-2 Figure 5-3 Figure 5-4 Figure 5-5 Figure 5-6 Figure 5-7 Figure 5-8 Figure 5-9 Figure 5-10 Figure 5-11 Figure 5-12 Figure 5-13 Figure 5-14 Figure 5-15 Figure 5-16 Figure 5-17 Figure 5-18 Figure 5-19 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Datasheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 16 16 17 17 18 19 19 20 20 21 21 22 22 23 23 24 24 25 27 27 27 27 Revision 1.1, 2012-09-11 BFP450 List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Datasheet Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision 1.1, 2012-09-11 BFP450 Product Brief 1 Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Datasheet 7 Revision 1.1, 2012-09-11 BFP450 Features 2 • • • • • • • • Features Highly linear low noise driver amplifier for all RF frontends up to 3 GHz Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology Output compression point OP1dB = 19 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz Easy to use Pb-free (RoHS compliant) standard package with visible leads Qualification report according to AEC-Q101 available 3 2 4 1 Applications Examples Driver amplifier • • • ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier • 2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas • TV, GPS, SDARS, 2.4 GHz WLAN, etc Suitable for 3 - 5.5 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP450 SOT343 Datasheet Pin Configuration 1=B 2=E 8 3=C Marking 4=E ANs Revision 1.1, 2012-09-11 BFP450 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings Parameter Symbol Values Unit Min. Collector emitter voltage Note / Test Condition Max. Open base VCEO – 4.5 V TA = 25 °C – 4.1 V TA = -55 °C Collector emitter voltage VCES – 15 V E-B short circuited Collector base voltage VCBO – 15 V Open emitter Emitter base voltage VEBO – 1.5 V Open collector Collector current IC – 170 mA – IB – 10 mA – Ptot – 500 mW TS ≤ 90 °C TJ – 150 °C – Base current Total power dissipation Junction temperature 1) Storage temperature TStg -55 150 °C – 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Datasheet 9 Revision 1.1, 2012-09-11 BFP450 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 120 – K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 600 500 Ptot [mW] 400 300 200 100 0 0 50 100 150 Ts [°C] Figure 4-1 Total Power Dissipation Ptot = f (Ts) Datasheet 10 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4.5 5 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – – 1 μA VCE = 15 V, VBE = 0 – 1 30 nA VCE = 3 V, VBE = 0 E-B short circuited Collector base leakage current ICBO – 1 30 nA VCB = 3 V, IE = 0 Open emitter Emitter base leakage current IEBO – 0.05 3 μA VEB = 0.5 V, IC = 0 Open collector DC current gain hFE 60 95 130 VCE = 4 V, IC = 50 mA 50 85 120 VCE = 3 V, IC = 90 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Transition frequency Symbol fT Values Min. Typ. Max. 18 24 – Unit Note / Test Condition GHz VCE = 3 V, IC = 90 mA, f = 1 GHz Collector base capacitance CCB – 0.48 0.8 pF VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 1.2 – pF VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded Emitter base capacitance CEB – 1.7 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz Collector grounded Datasheet 11 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP450 Testing Circuit Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 34.5 – IC = 50 mA Class A operation point Gms – 35.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 33 – IC = 50 mA Class A operation point S21 – 33.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.55 – IC = 50 mA Associated gain Gass – 32 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30.5 – IC = 90 mA Datasheet 12 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 28.5 – IC = 50 mA Class A operation point Gms – 29 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 25 – IC = 50 mA Class A operation point S21 – 25 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.55 – IC = 50 mA Associated gain Gass – 27.5 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30 – IC = 90 mA Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gms – 23 – IC = 50 mA Class A operation point Gms – 23.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 18.5 – IC = 50 mA Class A operation point S21 – 19 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.6 – IC = 50 mA Associated gain Gass – 23 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30.5 – IC = 90 mA Datasheet 13 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 18 – IC = 50 mA Class A operation point Gma – 18 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 14 – IC = 50 mA Class A operation point S21 – 14 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.65 – IC = 50 mA Associated gain Gass – 17 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 31 – IC = 90 mA Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 15.5 – IC = 50 mA Class A operation point Gma – 15.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 9.5 11.5 – IC = 50 mA Class A operation point S21 – 11.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.7 – IC = 50 mA Associated gain Gass – 14 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 31 – IC = 90 mA Datasheet 14 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 13.5 – IC = 50 mA Class A operation point Gma – 13.5 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 9.5 – IC = 50 mA Class A operation point S21 – 9.5 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.8 – IC = 50 mA Associated gain Gass – 12 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 19 – IC = 90 mA 3rd order intercept point OIP3 – 30 – IC = 90 mA Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB High linearity operation point Gma – 10 – IC = 50 mA Class A operation point Gma – 10 – IC = 90 mA Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 – 5.5 – IC = 50 mA Class A operation point S21 – 6 – IC = 90 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 2.05 – IC = 50 mA Associated gain Gass – 9 – IC = 50 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 18.5 – IC = 90 mA 3rd order intercept point OIP3 – 29.5 – IC = 90 mA Notes 1. AC parameter limits verified by random sampling 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured result 3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Datasheet 15 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 5.4 Characteristic DC Diagrams 160 1.90mA 140 1.71mA 1.52mA 120 1.33mA 1.14mA 80 0.95mA IC [mA] 100 0.76mA 60 0.57mA 40 0.38mA 20 0 0.19mA 0 1 2 3 4 5 VCE [V] Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA 120 110 100 hFE 90 80 70 60 50 0.1 1 10 100 1000 IC [mA] Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V Datasheet 16 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 1000 IC [mA] 100 10 1 0.1 0.01 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 10 IB [mA] 1 0.1 0.01 0.001 0.0001 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VBE [V] Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V Datasheet 17 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VEB [V] Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V Datasheet 18 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 5.5 Characteristic AC Diagrams 30 25 4.00V 3.00V 2.00V fT [GHz] 20 15 1.00V 10 5 0 0 20 40 60 80 100 I [mA] 120 140 160 180 160 180 C Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V 34 32 OIP3 [dBm] 30 28 3V, 0.9GHz 4V, 0.9GHz 3V, 1.9GHz 4V, 1.9GHz 26 24 22 20 18 0 20 40 60 80 100 IC [mA] 120 140 Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters Datasheet 19 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 1.2 1 Ccb [pF] 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 V CB 2.5 3 3.5 4 [V] Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 42 39 36 33 30 Gms G [dB] 27 24 21 G ma 18 15 2 |S21| 12 9 6 3 0 0 0.5 1 1.5 2 2.5 3 3.5 f [GHz] 4 4.5 5 5.5 6 Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA Datasheet 20 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 39 0.15GHz 36 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 18 1.50GHz 1.90GHz 2.40GHz 15 12 3.50GHz 9 5.50GHz 6 3 0 0 20 40 60 80 100 120 IC [mA] 140 160 180 200 Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz 39 36 0.15GHz 33 30 0.45GHz 27 G [dB] 24 0.90GHz 21 1.50GHz 1.90GHz 2.40GHz 18 15 12 3.50GHz 9 5.50GHz 6 3 0 0.5 1 1.5 2 2.5 V CE 3 [V] 3.5 4 4.5 5 Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz Datasheet 21 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 1 1.5 0.5 6 8 7 9 2 10 5 0.4 4 3 0.3 3 0.2 4 5 2 0.03 to 10 GHz 0.1 10 1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45GHz 0.1 0 0.1 10 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.9GHz −0.1 −10 1.9GHz −0.2 2.4GHz I = 50mA −5 −4 c I = 90mA −0.3 c −3 −0.4 −0.5 −2 −1.5 −1 Figure 5-14 Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA Datasheet 22 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 1 1.5 0.5 2 0.4 9 8 7 10 6 0.3 3 5 4 4 0.2 5 3 0.1 0.03 to 10 GHz 10 2 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 1 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 90 mA 50 mA −1 Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA 3 2.5 NFmin [dB] 2 1.5 IC = 90mA I = 50mA C 1 0.5 0 0 0.5 1 1.5 f [GHz] 2 2.5 3 Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt Datasheet 23 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 3 2.5 NFmin [dB] 2 1.5 f = 2.4GHz f = 1.9GHz 1 f = 0.9GHz f = 0.45GHz 0.5 0 0 20 40 60 80 100 Ic [mA] Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz 4.5 4 3.5 NF50 [dB] 3 2.5 f = 2.4GHz f = 1.9GHz 2 f = 0.9GHz 1.5 f = 0.45GHz 1 0.5 0 20 40 60 80 100 I [mA] c Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz Datasheet 24 Revision 1.1, 2012-09-11 BFP450 Electrical Characteristics 4.5 4 3.5 NF [dB] 3 2.5 2 1.5 ZS = 50Ω Z =Z S 1 0.5 0 20 40 60 Sopt 80 100 Ic [mA] Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. Datasheet 25 Revision 1.1, 2012-09-11 BFP450 Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Datasheet 26 Revision 1.1, 2012-09-11 BFP450 Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 7-1 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 7-2 Package Footprint Date code (YM) 2005, June 56 Type code XYs Manufacturer Pin 1 Figure 7-3 Marking Description (Marking BFP450: ANs) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 7-4 Tape Dimensions Datasheet 27 Revision 1.1, 2012-09-11 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG