Si3473DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.023 @ VGS = -4.5 V -7.9 0.029 @ VGS = -2.5 V - 7.0 0.041 @ VGS = -1.8 V - 5.9 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance APPLICATIONS D Load Switch D PA Switch (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V - 7.9 -5.9 - 5.7 -4.3 ID TA = 85_C Pulsed Drain Current IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A -20 -1.7 -0.9 2.0 1.1 1.0 0.6 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71937 S-22122—Rev. B, 25-Nov-02 www.vishay.com 1 Si3473DV New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -250 mA -0.40 Typ Max Unit -1 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = -9.6 V, VGS = 0 V -1 VDS = -9.6 V, VGS = 0 V, TJ = 85_C -5 VDS = -5 V, VGS = -4.5 V -20 m mA A VGS = -4.5 V, ID = -7.9 A 0.019 0.023 VGS = -2.5 V, ID = -7.0 A 0.024 0.029 VGS = -1.8 V, ID = -3 A 0.033 0.041 gfs VDS = -5 V, ID = -7.9 A 28 VSD IS = -1.7 A, VGS = 0 V -0.7 -1.2 22 33 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.8 Turn-On Delay Time td(on) 25 tr 50 75 130 200 110 165 65 90 Rise Time Turn-Off Delay Time VDS = -6 V, VGS = -4.5 V, ID = -7.9 A VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.2 IF = -1.7 A, di/dt = 100 A/ms nC 40 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 1.5 V 12 8 4 12 8 TC = 125_C 4 25_C 1V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 -55 _C 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 71937 S-22122—Rev. B, 25-Nov-02 Si3473DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 2500 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.08 0.06 0.04 VGS = 1.8 V VGS = 2.5 V Ciss 2000 1500 1000 Coss 0.02 Crss 500 VGS = 4.5 V 0.00 0 0 4 8 12 16 20 0 3 ID - Drain Current (A) Gate Charge 12 On-Resistance vs. Junction Temperature 1.4 VDS = 6 V ID = 7.9 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 9 VDS - Drain-to-Source Voltage (V) 5 4 3 2 VGS = 4.5 V ID = 7.9 A 1.2 1.0 0.8 1 0 0 4 8 12 16 20 0.6 -50 24 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.08 r DS(on) - On-Resistance ( W ) 10 TJ = 150_C TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 20 I S - Source Current (A) 6 0.06 ID = 7.9 A 0.04 ID = 3 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71937 S-22122—Rev. B, 25-Nov-02 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si3473DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 40 32 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 24 TA = 25_C 16 0.0 8 -0.1 -0.2 -50 -25 0 25 50 75 100 125 0 10- 2 150 10- 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 1000 rDS(on) Limited IDM Limited I D - Drain Current (A) 100 P(t) = 0.001 P(t) = 0.01 10 ID(on) Limited P(t) = 0.1 1 P(t) = 1 P(t) = 10 TC = 25_C Single Pulse BVDSS Limited 0.1 0.1 dc 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71937 S-22122—Rev. B, 25-Nov-02 Si3473DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 71937 S-22122—Rev. B, 25-Nov-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5