ENA1623 D

Ordering number : ENA1623A
ATP103
P-Channel Power MOSFET
http://onsemi.com
–30V, –55A, 13mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--30
V
±20
V
--55
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
57
mJ
--28
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--165
A
50
W
°C
Note : *1 VDD=--10V, L=100μH, IAV=--28A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP103-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP103
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
0.8
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/D0209PA TKIM TC-00002144 No. A1623-1/7
ATP103
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--28A
RDS(on)1
ID=--28A, VGS=--10V
10
13
mΩ
RDS(on)2
ID=--14A, VGS=--4.5V
14.5
20.5
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.2
--1
μA
±10
μA
--2.6
45
V
S
2430
pF
555
pF
Crss
395
pF
Turn-ON Delay Time
td(on)
19
ns
Rise Time
tr
400
ns
Turn-OFF Delay Time
td(off)
150
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--55A
145
ns
47
nC
10
nC
8.7
IS=--55A, VGS=0V
--1.03
nC
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --28A
RL=0.54Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP103
P.G
50Ω
S
Ordering Information
Device
ATP103-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1623-2/7
ATP103
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
ID= --14A
20
18
16
14
12
10
8
VDS= --10V
Single pulse
3
°C
25
2
C
5°
10
=
Tc
7
--2
°C
75
5
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
Drain Current, ID -- A
3
5 7 --100
20
=
VGS
10
0
--25
A
--28
V, I D=
25
50
75
100
125
td(off)
tf
100
7
5
tr
3
td(on)
2
5 7 --1.0
2
3
5 7 --10
150
IT15231
IS -- VSD
VGS=0V
Single pulse
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT15233
Ciss, Coss, Crss -- VDS
f=1MHz
3
2
--5.0
IT15229
14
= -, ID
V
5
.
--4
5
3
--4.5
5
7
5
75°
C
--4.0
--10
V GS=
IT15232
1000
7
3
--3.5
A
15
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
SW Time -- ID
2
--3.0
Case Temperature, Tc -- °C
VDD= --15V
VGS= --10V
10
7
--0.1
--2.5
25
0
--50
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
3
--2.0
Single pulse
IT15230
| yfs | -- ID
--1.5
RDS(on) -- Tc
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
--1.0
Gate-to-Source Voltage, VGS -- V
6
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
7
--0.5
30
22
Gate-to-Source Voltage, VGS -- V
0
IT15228
--28A
24
0
--2.0
Tc=25°C
Single pulse
28
26
--1.8
Tc=
75°C
--0.2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
25°
C
5°C
--10
--5
0
Tc=
7
--10
--20
°C
--15
--30
--2
5
VGS= --3.5V
--20
25°
C
--25
--40
--25°C
--30
--50
25°C
--16
.
--35
--60
--4.0V
Drain Current, ID -- A
--40
VDS= --10V
Single pulse
Tc=
--
--6
.0V
V
--8.0
--45
Drain Current, ID -- A
V
5
--4.
0V --10.0
V
--50
ID -- VGS
--70
Tc=25°C
Single pulse
25°
C
ID -- VDS
--55
Ciss
2
1000
7
Coss
Crss
5
3
2
2
Drain Current, ID -- A
3
5 7--100
2
IT15234
100
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT15235
No. A1623-3/7
ATP103
VGS -- Qg
3
2
--8
--6
--4
--2
IDP= --165A
--100
7
5
ID= --55A
0
5
10
15
20
25
30
35
40
Total Gate Charge, Qg -- nC
PD -- Tc
DC
--10
7
5
Operation in
this area is
limited by RDS(on).
3
2
50
30
20
10
0
0
20
40
60
80
100
2
3
120
Case Temperature, Tc -- °C
140
160
IT15238
er
ati
on
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT15237
EAS -- Ta
120
40
op
Tc=25°C
Single pulse
IT15236
50
PW≤10μs 1
0μ
s
10
0μ
1m
s
s
--1.0
7
5
--0.1
--0.1
Avalanche Energy derating factor -- %
60
45
1
10 0ms
0m
s
3
2
3
2
0
Allowable Power Dissipation, PD -- W
ASO
5
VDS= --15V
ID= --55A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--10
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1623-4/7
ATP103
Taping Specification
ATP103-TL-H
No. A1623-5/7
ATP103
Outline Drawing
ATP103-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1623-6/7
ATP103
Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1623-7/7
Similar pages