Ordering number : ENA1623A ATP103 P-Channel Power MOSFET http://onsemi.com –30V, –55A, 13mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --55 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 57 mJ --28 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --165 A 50 W °C Note : *1 VDD=--10V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP103-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP103 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/D0209PA TKIM TC-00002144 No. A1623-1/7 ATP103 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--28A RDS(on)1 ID=--28A, VGS=--10V 10 13 mΩ RDS(on)2 ID=--14A, VGS=--4.5V 14.5 20.5 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 45 V S 2430 pF 555 pF Crss 395 pF Turn-ON Delay Time td(on) 19 ns Rise Time tr 400 ns Turn-OFF Delay Time td(off) 150 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--55A 145 ns 47 nC 10 nC 8.7 IS=--55A, VGS=0V --1.03 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --28A RL=0.54Ω VIN D PW=10μs D.C.≤1% VOUT G ATP103 P.G 50Ω S Ordering Information Device ATP103-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1623-2/7 ATP103 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 ID= --14A 20 18 16 14 12 10 8 VDS= --10V Single pulse 3 °C 25 2 C 5° 10 = Tc 7 --2 °C 75 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 3 5 7 --100 20 = VGS 10 0 --25 A --28 V, I D= 25 50 75 100 125 td(off) tf 100 7 5 tr 3 td(on) 2 5 7 --1.0 2 3 5 7 --10 150 IT15231 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT15233 Ciss, Coss, Crss -- VDS f=1MHz 3 2 --5.0 IT15229 14 = -, ID V 5 . --4 5 3 --4.5 5 7 5 75° C --4.0 --10 V GS= IT15232 1000 7 3 --3.5 A 15 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 SW Time -- ID 2 --3.0 Case Temperature, Tc -- °C VDD= --15V VGS= --10V 10 7 --0.1 --2.5 25 0 --50 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 3 --2.0 Single pulse IT15230 | yfs | -- ID --1.5 RDS(on) -- Tc Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --1.0 Gate-to-Source Voltage, VGS -- V 6 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 30 22 Gate-to-Source Voltage, VGS -- V 0 IT15228 --28A 24 0 --2.0 Tc=25°C Single pulse 28 26 --1.8 Tc= 75°C --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25° C 5°C --10 --5 0 Tc= 7 --10 --20 °C --15 --30 --2 5 VGS= --3.5V --20 25° C --25 --40 --25°C --30 --50 25°C --16 . --35 --60 --4.0V Drain Current, ID -- A --40 VDS= --10V Single pulse Tc= -- --6 .0V V --8.0 --45 Drain Current, ID -- A V 5 --4. 0V --10.0 V --50 ID -- VGS --70 Tc=25°C Single pulse 25° C ID -- VDS --55 Ciss 2 1000 7 Coss Crss 5 3 2 2 Drain Current, ID -- A 3 5 7--100 2 IT15234 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15235 No. A1623-3/7 ATP103 VGS -- Qg 3 2 --8 --6 --4 --2 IDP= --165A --100 7 5 ID= --55A 0 5 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC PD -- Tc DC --10 7 5 Operation in this area is limited by RDS(on). 3 2 50 30 20 10 0 0 20 40 60 80 100 2 3 120 Case Temperature, Tc -- °C 140 160 IT15238 er ati on 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT15237 EAS -- Ta 120 40 op Tc=25°C Single pulse IT15236 50 PW≤10μs 1 0μ s 10 0μ 1m s s --1.0 7 5 --0.1 --0.1 Avalanche Energy derating factor -- % 60 45 1 10 0ms 0m s 3 2 3 2 0 Allowable Power Dissipation, PD -- W ASO 5 VDS= --15V ID= --55A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1623-4/7 ATP103 Taping Specification ATP103-TL-H No. A1623-5/7 ATP103 Outline Drawing ATP103-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1623-6/7 ATP103 Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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