ATP104 D

Ordering number : ENA1406A
ATP104
P-Channel Power MOSFET
http://onsemi.com
–30V, –75A, 8.4mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--30
V
±20
V
--75
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
130
mJ
38
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--225
A
60
W
°C
Note : *1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP104-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP104
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
0.8
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/20409PA MSIM TC-00001830 No. A1406-1/7
ATP104
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--38A
70
RDS(on)1
ID=--38A, VGS=--10V
6.4
8.4
mΩ
RDS(on)2
ID=--19A, VGS=--4.5V
9.6
13.5
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.2
--1
μA
±10
μA
--2.6
V
S
3950
pF
880
pF
Crss
610
pF
Turn-ON Delay Time
td(on)
24
ns
Rise Time
tr
520
ns
Turn-OFF Delay Time
td(off)
290
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--75A
260
ns
76
nC
18
nC
13
IS=--75A, VGS=0V
--1.02
nC
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --38A
RL=0.39Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP104
P.G
50Ω
S
Ordering Information
Device
ATP104-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1406-2/7
ATP104
--45
--40
VGS= --3.5V
--35
--30
--25
--20
--15
--40
--30
--1.0
--1.5
RDS(on) -- VGS
30
26
ID= --19A
--38A
20
--0.5
--1.0
--1.5
18
16
14
12
10
8
6
--2.0
--2.5
--3.0
--3.5
--4.0
Cutoff Voltage, VGS(off) -- V
--4.5
IT14389
RDS(on) -- Tc
18
24
22
0
IT14388
Tc=25°C
Single pulse
28
0
--2.0
--2
5°C
25°
C
--0.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
75°C
--50
--10
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--60
--20
--10
--5
0
--70
Tc=
75°
C
--50
Tc=
--25°
C
--80
--16.0 -V 1
--55
VDS= --10V
--90
Drain Current, ID -- A
--60
Drain Current, ID -- A
--4.0V
0.0V
--65
--6
.0V
--4
.5
V
--8.0
V
--70
ID -- VGS(off)
--100
Tc=25°C
25°
C
ID -- VDS
--75
Single pulse
16
14
19A
12
= -, ID
4.5V
= -VGS
10
8A
= --3
0V, I D
1
=
VGS
8
6
4
4
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
100
7
°C
25
3
C
5°
2
=
Tc
10
--2
°C
75
7
5
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
3
2
--100 VGS=0V
7 Single pulse
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
--0.4
SW Time -- ID
100
125
IS -- VSD
--0.6
150
IT14391
--0.8
--1.0
--1.2
--1.4
IT14393
f=1MHz
7
5
1000
7
5
td(off)
3
tf
2
100
tr
7
5
3
Ciss
3
2
1000
Coss
7
Crss
5
td(on)
2
10
--0.1
75
Ciss, Coss, Crss -- VDS
10000
VDD= --15V
VGS= --10V
50
Diode Forward Voltage, VSD -- V
IT14392
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
5 7 --100
25
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
VDS= --10V
5
0
--25
IT14390
| yfs | -- ID
2
2
--50
--16
--25°
C
--6
25°C
--4
5°C
--2
Tc=
7
2
0
3
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT14394
2
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT14395
No. A1406-3/7
ATP104
VGS -- Qg
--10
VDS= --15V
ID= --75A
--8
--7
--6
--5
--4
--3
--2
0
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
PD -- Tc
70
80
--10
7
5
40
30
20
10
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14398
10
0μ
0μ
s
s
Operation in
this area is
limited by RDS(on).
3
2
--1.0
7
5
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT14397
EAS -- Ta
120
50
20
1m
s
10
ms
DC
10
op
0m
era
s
tio
n
3
2
IT14396
60
0
PW≤10μs 1
ID= --75A
--0.1
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
70
0
--100
7
5
3
2
--1
0
IDP= --225A
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--9
ASO
5
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1406-4/7
ATP104
Taping Specification
ATP104-TL-H
No. A1406-5/7
ATP104
Outline Drawing
ATP104-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1406-6/7
ATP104
Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1406-7/7
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