ATP602 D

Ordering number : ENA1543A
ATP602
N-Channel Power MOSFET
http://onsemi.com
600V, 5A, 2.7Ω, ATPAK
Features
•
•
ON-resistance RDS(on)=2.1Ω (typ.)
10V drive
•
•
Input capacitance Ciss=350pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
600
V
±30
V
Allowable Power Dissipation
ID
IDP
PD
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
74
mJ
5
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
5
A
15
A
Note : *1 VDD=99V, L=5mH, IAV=5A (Fig.1)
*2 L≤5mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP602-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP602
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.6
0.4
2.3
0.1
2.3
0.55
0.7
0.5
1
0.8
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62712 TKIM/12710QB TKIM TC-00002087 No. A1543-1/7
ATP602
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Turn-OFF Delay Time
Fall Time
Ratings
Conditions
min
typ
600
VDS=10V, ID=1mA
3
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
1.5
V
100
μA
±100
nA
5
2.9
V
S
2.1
2.7
Ω
350
pF
68
pF
15
pF
td(on)
14.2
ns
tr
td(off)
37.4
ns
36.2
ns
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
20.4
ns
13.6
nC
3.4
nC
7.2
IS=5A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
10V
0V
1.2
V
VDD=200V
VIN
ID=2.5A
RL=80Ω
≥50Ω
RG
VOUT
VIN
ATP602
VDD
50Ω
nC
0.9
Fig.2 Switching Time Test Circuit
L
10V
0V
Unit
max
PW=10μs
D.C.≤0.5%
P.G
D
G
RGS=50Ω
S
ATP602
Ordering Information
Device
ATP602-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1543-2/7
ATP602
ID -- VDS
8
15V
Tc= --25°C
8V
5
7V
3
2
6V
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
6
Tc=75°C
25°C
2
--25°C
1
6
7
8
9
10
11
12
13
| yfs | -- ID
7
14
1.0
7
5
3
5
7
2
1.0
3
Drain Current, ID -- A
--25
0
25
50
75
100
125
VDD=200V
VGS=10V
150
IT14903
IS -- VSD
VGS=0V
Single pulse
3
2
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT14905
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
Ciss, Coss, Crss -- pF
2
100
tf
7
td (off)
5
3
tr
2
td(on)
5
Ciss
3
2
100
Coss
7
5
3
2
Crss
10
7
0.1
1
0.01
0.2
7
20
IT14901
=
V GS
2
2
3
18
5A
IT14904
SW Time -- ID
5
5
16
2.
I D=
,
V
10
3
3
2
2
14
4
3
2
3
2
0.1
12
5
10
7
5
C
75°
10
Case Temperature, Tc -- °C
Source Current, IS -- A
Tc
8
Single pulse
IT14902
°C
-25
=-
2
6
RDS(on) -- Tc
0
--50
15
°C
25
3
4
Gate-to-Source Voltage, VGS -- V
VDS=10V
5
2
6
4
5
0
IT14900
5
3
4
0
20
ID=2.5A
Single pulse
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
18
75°C
6
--25°C
4
25°C
Tc=7
5°C
2
8
2
VGS=5V
0
10
25 ° C
4
1
Switching Time, SW Time -- ns
Drain Current, ID -- A
6
0
VDS=20V
12
10V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
7
0
ID -- VGS
14
Tc=25°C
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
IT14906
10
7
0
10
20
30
40
50
Drain-to-Source Voltage, VDS -- V
60
IT14907
No. A1543-3/7
ATP602
VGS -- Qg
10
10
7
5
7
6
5
4
3
3
2
4
6
8
10
12
PD -- Tc
16
50
40
30
20
10
0
20
40
60
80
100
3
120
Case Temperature, Tc -- °C
140
160
IT14910
s
5
7 10
2
3
5
7 100
2
3
5 7 1000
IT16934
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
60
0
2
IT14908
70
μs
Tc=25°C
Single pulse
0.01
1.0
Avalanche Energy derating factor -- %
80
14
Operation in
this area is
limited by RDS(on).
3
2
1
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
1.0
7
5
0.1
7
5
2
0μ
3
2
2
0
10
10
ID=5A
s
1m
Drain Current, ID -- A
8
0
IDP=15A (PW≤10μs)
n
s
m
tio
10 ms era
0
p
10 C o
D
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
VDS=200V
ID=5A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1543-4/7
ATP602
Taping Specification
ATP602-TL-H
No. A1543-5/7
ATP602
Outline Drawing
ATP602-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1543-6/7
ATP602
Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1543-7/7
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