ATP102 D

Ordering number : ENA1479A
ATP102
P-Channel Power MOSFET
http://onsemi.com
–30V, –40A, 18.5mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--30
V
±20
V
--40
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
58
mJ
20
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--120
A
40
W
°C
Note : *1 VDD=10V, L=200μH, IAV=20A
*2 L≤200μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP102-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP102
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/52709PA MSIM TC-00001968 No. A1479-1/7
ATP102
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Conditions
Ratings
min
--30
IGSS
VGS(off)
| yfs |
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--20A
--1.2
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--20A, VGS=--10V
ID=--10A, VGS=--4.5V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Rise Time
Turn-OFF Delay Time
typ
Unit
max
V
--1
μA
±10
μA
--2.6
29
V
S
14
18.5
mΩ
22
31
mΩ
1490
pF
360
pF
Crss
270
pF
td(on)
tr
11
ns
135
ns
135
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--40A
185
ns
34
nC
4.2
nC
11.5
IS=--40A, VGS=0V
--0.99
nC
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --20A
RL=0.75Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP102
P.G
50Ω
S
Ordering Information
Device
ATP102-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1479-2/7
ATP102
--6
.0V
--8.0
V
V
--4.0
--10
--30
--25
--20
--15
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
--1.8
35
30
25
--20A
20
15
10
Gate-to-Source Voltage, VGS -- V
°C
25
C
5°
10
=
Tc
7
--2
75
°C
5
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
7
--3.0
--3.5
--4.0
--4.5
30
A
25
=
VGS
20
10
= -, ID
V
5
.
--4
A
--20
V, I D=
--10
V GS=
15
10
5
--40
--20
0
20
40
60
80
100
120
140
IS -- VSD
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
Diode Forward Voltage, VSD -- V
IT14691
SW Time -- ID
160
IT14690
VGS=0V
Single pulse
--0.01
7
5
3
2
--0.001
--0.3
--1.2
IT14692
Ciss, Coss, Crss -- VDS
5
VDD= --15V
VGS= --10V
--5.0
IT14688
35
--100
7
5
3
2
f=1MHz
3
3
2
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
5 7 --100
--2.5
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
--2.0
Single pulse
0
--60
VDS= --10V
Single pulse
2
--1.5
RDS(on) -- Tc
IT14689
| yfs | -- ID
5
--1.0
Gate-to-Source Voltage, VGS -- V
5
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
7
--0.5
40
40
ID= --10A
0
IT14687
Tc=25°C
Single pulse
45
0
--2.0
25°
C
--0.4
5°C
--0.2
Tc=
7
0
--5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
Tc=25°C
Single pulse
25°
C
--10
--5
Tc=
--2
75°
5°C
C
--15
--35
--25
°C
VGS= --3.5V
V
--20
--45
Drain Current, ID -- A
--25
VDS= --10V
Single pulse
--40
--10.0
V
--30
V
.5
--4
--16.
0
Drain Current, ID -- A
--35
ID -- VGS
--50
Tc=
--25
°C
75°
C
25°
C
ID -- VDS
--40
td(off)
tf
100
7
5
tr
3
2
Ciss
1000
7
5
Coss
Crss
3
2
td(on)
100
10
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT14693
7
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT14694
No. A1479-3/7
ATP102
VGS -- Qg
--10
--100
7
5
--8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--9
--7
--6
--5
--4
--3
3
2
10
15
20
25
30
Total Gate Charge, Qg -- nC
PD -- Tc
40
30
25
20
15
10
5
0
20
40
60
80
100
2
3
5
7 --1.0
120
Case Temperature, Tc -- °C
140
160
IT14697
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT14696
EAS -- Ta
120
35
1m
s
1
10 0m
0m s
DC
s
op
er
ati
on
Tc=25°C
Single pulse
IT14695
40
0
Operation in
this area is
limited by R DS (on).
--0.1
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
45
35
ID = --40A
3
2
--1
5
PW≤10μs 10
μs
100
μs
--10
7
5
--1.0
7
5
0
IDP = --120A
3
2
--2
0
ASO
3
2
VDS= --15V
ID= --40A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1479-4/7
ATP102
Taping Specification
ATP102-TL-H
No. A1479-5/7
ATP102
Outline Drawing
ATP102-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1479-6/7
ATP102
Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1479-7/7
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