Ordering number : ENA1479A ATP102 P-Channel Power MOSFET http://onsemi.com –30V, –40A, 18.5mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --40 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 58 mJ 20 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --120 A 40 W °C Note : *1 VDD=10V, L=200μH, IAV=20A *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP102-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP102 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/52709PA MSIM TC-00001968 No. A1479-1/7 ATP102 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Conditions Ratings min --30 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--20A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--20A, VGS=--10V ID=--10A, VGS=--4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Rise Time Turn-OFF Delay Time typ Unit max V --1 μA ±10 μA --2.6 29 V S 14 18.5 mΩ 22 31 mΩ 1490 pF 360 pF Crss 270 pF td(on) tr 11 ns 135 ns 135 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--40A 185 ns 34 nC 4.2 nC 11.5 IS=--40A, VGS=0V --0.99 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --20A RL=0.75Ω VIN D PW=10μs D.C.≤1% VOUT G ATP102 P.G 50Ω S Ordering Information Device ATP102-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1479-2/7 ATP102 --6 .0V --8.0 V V --4.0 --10 --30 --25 --20 --15 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 --1.8 35 30 25 --20A 20 15 10 Gate-to-Source Voltage, VGS -- V °C 25 C 5° 10 = Tc 7 --2 75 °C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 7 --3.0 --3.5 --4.0 --4.5 30 A 25 = VGS 20 10 = -, ID V 5 . --4 A --20 V, I D= --10 V GS= 15 10 5 --40 --20 0 20 40 60 80 100 120 140 IS -- VSD --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V IT14691 SW Time -- ID 160 IT14690 VGS=0V Single pulse --0.01 7 5 3 2 --0.001 --0.3 --1.2 IT14692 Ciss, Coss, Crss -- VDS 5 VDD= --15V VGS= --10V --5.0 IT14688 35 --100 7 5 3 2 f=1MHz 3 3 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 5 7 --100 --2.5 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --2.0 Single pulse 0 --60 VDS= --10V Single pulse 2 --1.5 RDS(on) -- Tc IT14689 | yfs | -- ID 5 --1.0 Gate-to-Source Voltage, VGS -- V 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 40 40 ID= --10A 0 IT14687 Tc=25°C Single pulse 45 0 --2.0 25° C --0.4 5°C --0.2 Tc= 7 0 --5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 Tc=25°C Single pulse 25° C --10 --5 Tc= --2 75° 5°C C --15 --35 --25 °C VGS= --3.5V V --20 --45 Drain Current, ID -- A --25 VDS= --10V Single pulse --40 --10.0 V --30 V .5 --4 --16. 0 Drain Current, ID -- A --35 ID -- VGS --50 Tc= --25 °C 75° C 25° C ID -- VDS --40 td(off) tf 100 7 5 tr 3 2 Ciss 1000 7 5 Coss Crss 3 2 td(on) 100 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14693 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14694 No. A1479-3/7 ATP102 VGS -- Qg --10 --100 7 5 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 10 15 20 25 30 Total Gate Charge, Qg -- nC PD -- Tc 40 30 25 20 15 10 5 0 20 40 60 80 100 2 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT14697 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14696 EAS -- Ta 120 35 1m s 1 10 0m 0m s DC s op er ati on Tc=25°C Single pulse IT14695 40 0 Operation in this area is limited by R DS (on). --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 35 ID = --40A 3 2 --1 5 PW≤10μs 10 μs 100 μs --10 7 5 --1.0 7 5 0 IDP = --120A 3 2 --2 0 ASO 3 2 VDS= --15V ID= --40A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1479-4/7 ATP102 Taping Specification ATP102-TL-H No. A1479-5/7 ATP102 Outline Drawing ATP102-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1479-6/7 ATP102 Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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