T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T-Modules) FEATURES • Fast recovery time characteristics RoHS • Electrically isolated base plate COMPLIANT • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved D-55 • RoHS compliant • Designed and qualified for industrial level DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. PRODUCT SUMMARY IF(AV) 40/70/85 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL T40HFL T70HFL T85HFL UNITS IF(AV) 40 70 85 A IF(RMS) 63 110 133 A 50 Hz 475 830 1300 60 Hz 500 870 1370 50 Hz 1130 3460 8550 60 Hz 1030 3160 7810 IFSM I2 t CHARACTERISTICS A A2 s VRRM Range 100 to 1000 V trr Range 200 to 1000 ns TJ Range - 40 to 125 °C Document Number: 93184 Revision: 13-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 T..HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A (T-Modules) ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE trr CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 S02, S05, S10 100 150 20 S02, S05, S10 200 300 40 S02, S05, S10 400 500 60 S02, S05, S10 600 700 T40HFL.. T70HFL.. T85HFL.. IRRM MAXIMUM AT TJ = 25 °C µA 100 80 S05, S10 800 900 100 S05, S10 1000 1100 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current IF(AV) TEST CONDITIONS t = 8.3 ms IFSM t = 10 ms t = 10 ms t = 8.3 ms I2 t Maximum for fusing 63 110 133 475 830 1300 500 870 1370 400 700 1100 420 730 1150 1130 3460 8550 1030 3160 7810 No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum A2 s 2450 6050 730 2230 5520 t = 0.1 to 10 ms, no voltage reapplied 11 300 34 600 85 500 Low level value of threshold voltage VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 0.82 0.87 0.84 VF(TO)2 TJ = 25 °C, (I > π x IF(AV)) 0.84 0.90 0.86 Low level value of forward slope resistance rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 7.0 2.77 2.15 High level value of forward slope resistance rf2 TJ = 25 °C, (I > π x IF(AV)) 6.8 2.67 2.07 IFM = π x IF(AV), TJ = 25 °C, tp = 400 µs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.60 1.73 1.55 www.vishay.com 2 A A High level value of threshold voltage Maximum forward voltage drop A °C 800 t = 8.3 ms I2√t 85 100 % VRRM reapplied t = 10 ms I2√t 70 70 IF(RMS) t = 8.3 ms Maximum I2t for fusing 40 180° conduction, half sine wave t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current T40HFL T70HFL T85HFL UNITS A2√s V mΩ VFM For technical questions, contact: [email protected] V Document Number: 93184 Revision: 13-Feb-08 T..HFL Series Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time Maximum reverse recovery charge trr Qrr T40HFL TEST CONDITIONS (1) T70HFL T85HFL UNITS S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, -dIF/dt = 100 A/µs IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290 TJ = 25 °C, -dIF/dt = 25 A/µs IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000 200 500 1000 TJ = 25 °C, -dIF/dt = 100 A/µs IF = 1 A to VR = 30 V 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 TJ = 25 °C, -dIF/dt = 25 A/µs IFM = π x rated IF(AV), VR = - 30 V 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 ns µC Note (1) Tested on LEM 300 A diodemeter tester BLOCKING PARAMETER SYMBOL Maximum peak reverse leakage current RMS isolation voltage TEST CONDITIONS IRRM TJ = 125 °C VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s T40HFL T70HFL T85HFL UNITS 20 mA 3500 V T40HFL T70HFL T85HFL UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ - 40 to 125 Storage temperature range TStg - 40 to 150 Maximum internal thermal resistance, junction to case per module RthJC DC operation Thermal resistance, case to heatsink per module RthCS Mounting surface, flat, smooth and greased Junction operating temperature range 0.85 Mounting torque ± 10 % 0.46 K/W 1.3 ± 10 % Nm M5 screws terminals Non-lubricated threads busbar to terminal 0.53 0.2 M3.5 mounting screws (1) Non-lubricated threads base to heatsink °C 3 ± 10 % Approximate weight See dimensions link at the end of datasheet Case style T-module 54 g 19 oz. D-55 Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24 T70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19 T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015 UNITS K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93184 Revision: 13-Feb-08 For technical questions, contact: [email protected] www.vishay.com 3 T..HFL Series T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 10 20 30 40 50 T70HFL.. Series RthJC (DC) = 0.53 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Period 90 80 30° 60° 70 90° 120° 180° 60 DC 50 0 10 20 30 40 50 60 70 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 130 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 50 60 70 80 90 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 130 T70HFL.. Series R thJC (DC) = 0.53 K/ W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 120° 60 180° 50 www.vishay.com 4 130 Average Forward Current (A) 0 10 20 30 40 50 60 70 80 Maximum Allowable Case Temperature (°C) Maximum Allowab le Case Temperature (°C) Maximum Allowa ble Case Temperature (°C) Maximum Allowable Case Temp erature (°C) 130 Maximum Allowa ble Case Temperature (°C) Fast Recovery Diodes, 40/70/85 A (T-Modules) Vishay High Power Products 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 140 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 T..HFL Series 180° 120° 90° 60° 30° 60 50 RMSLimit 40 30 20 Conduc tion Angle 10 T40HFL.. Series TJ= 125°C 0 0 5 10 15 20 25 30 35 Maximum Average Forward Power Loss (W) 70 140 DC 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduc tion Period 40 T70HFL.. Series TJ = 125°C 20 0 0 40 40 60 80 100 120 Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics 90 DC 180° 120° 90° 60° 30° 80 70 60 50 RMS Limit 40 30 Conduc tion Period 20 T40HFL.. Series T J = 125°C 10 0 0 10 20 30 40 50 60 110 180° 120° 90° 60° 30° 100 90 80 70 RMS Limit 60 50 40 Conduc tion Angle 30 T85HFL.. Series TJ= 125°C 20 10 0 70 0 80 70 60 RMS Limit 50 40 30 Conduc tion Angle 20 T70HFL.. Series TJ= 125°C 10 0 0 10 20 30 40 50 60 70 Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 90 20 30 40 50 60 70 80 90 Fig. 11 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics 100 10 Average Forward Current (A) Average Forward Current (A) Maximum Average Forward Power Loss (W) 20 Average Forward Current (A) Maximum Average Forward Power Loss (W) Ma ximum Average Forward Power Lo ss (W) Maximum Average Forward Power Lo ss (W) Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) 160 DC 180° 120° 90° 60° 30° 140 120 100 80 RMSLimit 60 Conduc tion Period 40 T85HFL.. Series TJ = 125°C 20 0 0 20 40 60 80 100 120 140 Average Forward Current (A) Average Forward Current (A) Fig. 9 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics Document Number: 93184 Revision: 13-Feb-08 For technical questions, contact: [email protected] www.vishay.com 5 T..HFL Series At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 400 350 300 250 200 150 T40HFL.. Series 100 Peak Half Sine Wave Forward Current (A) 10 100 850 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 125°C No Voltage Reapplied Rated V RRM Reapplied 750 650 550 450 350 250 T70HFL.. Series 150 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 16 - Maximum Non-Repetitive Surge Current 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 450 400 350 300 250 200 150 T40HFL.. Series 100 0.01 0.1 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forwa rd Current (A) 1 1 1200 At Any Rated Load Condition And With Rated V RRM Ap p lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 1000 900 800 700 600 500 T85HFL.. Series 400 300 1 10 100 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current 800 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 700 600 500 400 300 T70HFL.. Series 200 1 10 100 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forwa rd Current (A) 450 Peak Half Sine Wave Forward Current (A) Fast Recovery Diodes, 40/70/85 A (T-Modules) Vishay High Power Products 1300 1200 1100 1000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied 900 800 700 600 500 400 T85HFL.. Series 300 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current Fig. 18 - Maximum Non-Repetitive Surge Current www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 T..HFL Series Maximum Reverse Rec overy Time - Trr (µs) 0.51 0.5 I FM= 300A 0.49 220A 172A 0.48 100A 50A 0.47 T40HFL..S02 T70HFL..S02 TJ = 125 °C 0.45 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Maximum Reverse Rec overy Charge - Qrr (µC) Fig. 19 - Recovery Time Characteristics 8 7 6 I FM= 300A 220A 172A 100A 50A 5 4 3 T40HFL..S02 T70HFL..S02 TJ = 125 °C 2 1 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Maximum Re verse Rec overy Current - Irr (A) Fig. 20 - Recovery Charge Characteristics 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 6 T40HFL..S02 T70HFL..S02 TJ = 125 °C 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 21 - Recovery Current Characteristics Document Number: 93184 Revision: 13-Feb-08 1.1 1 I FM= 300A 0.9 220A 172A 100A 0.8 50A 0.7 T40HFL..S05 T70HFL..S05 TJ = 125 °C 0.6 10 100 Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs) Fig. 22 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (µC) 0.46 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 T40HFL..S05 T70HFL..S05 TJ = 125 °C 6 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs) Fig. 23 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) 28 26 24 22 I FM= 300A 220A 172A 100A 50A 20 18 16 14 12 10 8 T40HFL..S05 T70HFL..S05 TJ = 125 °C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 24 - Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 7 T..HFL Series 1.8 1.7 I FM= 300A 1.6 200A 1.5 100A 1.4 50A 1.3 1.2 1 10 100 Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs) Maximum Reverse Re covery Charge - Qrr (µC) Fig. 25 - Recovery Time Characteristics 40 35 I FM= 300A 200A 30 100A 25 50A 20 15 10 T40HFL..S10 T70HFL..S10 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Fig. 26 - Recovery Charge Characteristics 45 40 I FM= 300A 200A 100A 35 50A 30 25 20 15 T40HFL..S10 T70HFL..S10 TJ = 125 °C 10 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Fig. 27 - Recovery Current Characteristics www.vishay.com 8 1.2 1.1 1 IFM = 300A 0.9 200A 100A 0.8 50A 0.7 T85HFL..S02 T J = 125°C 0.6 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs) Fig. 28 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (µC) 1.1 T40HFL..S10 T70HFL..S10 TJ = 125 °C Maximum Reverse Recovery Time - Trr (µs) Fast Recovery Diodes, 40/70/85 A (T-Modules) 25 IFM = 300A 20 200A 100A 15 50A 10 T85HFL..S02 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 29 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Time - Trr (µs) Vishay High Power Products 28 26 24 IFM = 300A 200A 100A 50A 22 20 18 16 14 12 10 8 T85HFL..S02 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Fig. 30 - Recovery Current Characteristics For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 T..HFL Series 1.2 IFM = 300A 1.1 200A 100A 50A 0.9 T85HFL..S05 TJ = 125°C 0.8 10 100 Ra te Of Fall Of Forward Current - di/ d t (A/ µs) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 31 - Recovery Time Characteristics 30 IFM = 300A 27 200A 24 21 18 100A 50A 15 12 9 T85HFL..S05 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Fig. 32 - Recovery Charge Characteristics 35 IFM = 300A 200A 30 100A 50A 25 20 15 T85HFL..S05 TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs) Fig. 33 - Recovery Current Characteristics Document Number: 93184 Revision: 13-Feb-08 2 1.9 1.8 IFM = 300A 1.7 1.6 200A 1.5 100A 1.4 1.3 1.2 1.1 50A T85HFL..S10 TJ = 125°C 1 10 100 Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs) Fig. 34 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (µC) 1 Maximum Reverse Rec overy Time - Trr (µs) 1.3 55 50 IFM = 300A 45 200A 40 100A 35 30 50A 25 20 15 T85HFL..S10 TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Fig. 35 - Recovery Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Time - Trr (µs) Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) 60 55 50 IFM = 300A 200A 100A 45 50A 40 35 30 25 20 T85HFL..S10 TJ = 125°C 15 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs) Fig. 36 - Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 9 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T-Modules) Vishay High Power Products Peak Forward Current (A) 1E4 tp T40HFL.. Series Trapezoidal Pulse T C = 70 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 tp 1E1 1E1 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse T = 70°C C 1E2 1E1 1E4 1E1 1E4 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics 1E4 Peak Forward Current (A) tp T40HFL.. Trapezoidal Pulse TC= 90 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 tp 1E1 1E1 2500 1500 1000 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse TC= 90°C 1E2 1E3 1E1 1E1E4 4 E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 38 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 1E3 0.1 0.04 0.02 1E2 0.4 2 10 0.4 0.04 0.02 0.01 0.01 1E1 tp 1E0 1E1 0.2 1 4 T40HFL.. Series Sinusoid al Pulse TJ = 125 °C 1E2 tp 1E3 Pulse Basewidth (µs) 1E1E4 4 1E1 1E1 1 2 4 10 20 joules per pulse 0.2 0.1 T40HFL.. Series Trapezoidal Pulse TJ= 125°C di/ dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 39 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 T..HFL Series Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) Peak Forward Current (A) 1E4 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 1E2 T70HFL.. Series Sinusoid a l Pulse TC= 70°C tp 1E1 1E1 tp 1E2 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 70°C 1E1 1 1E41E 1E4 1E3 2500 1500 1000 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 40 - Frequency Characteristics Peak Forward Current (A) 1E4 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 T70HFL.. Series Sinusoidal Pulse TC= 90°C tp 1E1 1E1 tp 1E2 1E3 2500 1500 1000 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 90°C 1E4 1E41E1 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 41 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 4 1E3 1 0.1 0.04 0.02 1E2 20 joules per pulse 10 2 1 0.4 0.2 tp 0.02 T70HFL.. Series Sinusoidal Pulse TJ = 125°C 1E2 0.1 0.04 0.2 0.01 tp 1E0 1E1 10 0.4 0.01 1E1 2 4 1E3 Pulse Basewidth (µs) 1E41E 1E4 1E1 1 T70HFL.. Series Trapezoidal pulse T J= 125°C di/ dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 42 - Maximum Forward Energy Power Loss Characteristics Document Number: 93184 Revision: 13-Feb-08 For technical questions, contact: [email protected] www.vishay.com 11 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T-Modules) Vishay High Power Products Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz 1E2 T85HFL.. Series Sinusoidal Pulse TC= 70°C tp 1E1 1E1 1E2 tp 1E4 1E41E1 1E1 1E3 T85HFL.. Series Trapezoidal Pulse T C= 70°C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 43 - Frequency Characteristics Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 1E2 T85HFL.. Series Sinusoidal Pulse TC= 90°C tp 1E1 1E1 1E2 tp 1E3 1E4 1E1 1 1E41E 400 200 50 Hz T85HFL.. Series Trapezoidal Pulse T C= 90°C 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 44 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 20 joules per pulse 10 4 1E3 1 0.4 0.2 0.1 0.04 0.02 0.01 1E2 1E1 tp 1E0 1E1 4 2 2 0.4 1 0.2 0.1 0.04 0.02 0.01 T85HFL.. Series Sinusoidal Pulse TJ= 125 °C 1E2 10 tp 1E3 Pulse Basewidth (µs) 1E4 1E41E1 1E1 T85HFL.. Series Trapezoid al Pulse T J= 125°C di/dt = 50A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 45 - Maximum Forward Energy Power Loss Characteristics www.vishay.com 12 For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 T..HFL Series Fast Recovery Diodes, Vishay High Power Products 40/70/85 A (T-Modules) 10000 Instanta neous Forwa rd Current (A) Instantaneous Forward Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 T40HFL.. Series 1 0.5 1000 100 TJ= 25°C TJ= 125°C 10 T70HFL.. Series 1 1 1.5 2 2.5 3 3.5 4 4.5 0 Instantaneous Forward Voltage (V) 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics Instantaneous Forward Current (A) 10000 1000 TJ= 25°C TJ= 125°C 100 T85HFL.. Series 10 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Transient Thermal Impedanc e ZthJC (K/ W) Fig. 48 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: R thJC = 0.85 K/ W R thJC = 0.53 K/ W R thJC = 0.46 K/ W (DC Operation) T40HFL.. Series T70HFL.. Series T85HFL.. Series 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 49 - Thermal Impedance ZthJC Characteristics Document Number: 93184 Revision: 13-Feb-08 For technical questions, contact: [email protected] www.vishay.com 13 T..HFL Series Fast Recovery Diodes, 40/70/85 A (T-Modules) Vishay High Power Products ORDERING INFORMATION TABLE Device code T 40 HFL 100 S10 1 2 3 4 5 1 - Module type 2 - Current rating 3 - Fast recovery diode 4 - Voltage code x 10 = VRRM 5 - trr code 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) S02 = 200 ns S05 = 500 ns S10 = 1000 ns CIRCUIT CONFIGURATION + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 14 http://www.vishay.com/doc?95313 For technical questions, contact: [email protected] Document Number: 93184 Revision: 13-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1