Si7476DP New Product Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 25 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.0066 @ VGS = 4.5 V 23 APPLICATIONS VDS (V) 40 D Automotive* − 12-V Boardnet − High-Side Switches − Motor Drives *Contact factory for automotive qualification PowerPAK SO-8 S 6.15 mm 1 2 5.15 mm S 3 D S 4 G D 8 7 G D 6 D 5 D S Bottom View Ordering Information: Si7476DP-T1—E3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS 15 20 12 80 1.6 IAS 60 Avalanche Energy EAS 180 Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD A 4.5 Avalanche Current TA = 25_C V 25 IDM mJ 5.4 1.9 3.4 1.2 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 52 65 1.0 1.3 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72569 S-40577—Rev. B, 29-Mar-04 www.vishay.com 1 Si7476DP New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 40 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 25 A 0.0042 0.0053 VGS = 4.5 V, ID = 23 A 0.0053 0.0066 gfs VDS = 15 V, ID = 25 A 85 VSD IS = 4.5 A, VGS = 0 V 0.76 1.2 118 177 W S V Dynamicb Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 25 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 21.2 Gate Resistance Rg 1.0 td(on) 30 tr 22 35 130 195 55 85 45 70 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 25 IF = 4.5 A, di/dt = 100 A/ms W 45 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 40 I D − Drain Current (A) I D − Drain Current (A) 50 30 20 10 0 0.0 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 30 20 TC = 125_C 10 3V 0.5 40 3.0 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72569 S-40577—Rev. B, 29-Mar-04 Si7476DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.008 Capacitance 10000 8000 VGS = 4.5 V 0.006 0.005 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.007 VGS = 10 V 0.004 0.003 0.002 Ciss 6000 4000 2000 Coss 0.001 0.000 Crss 0 0 10 20 30 40 50 0 60 5 ID − Drain Current (A) rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 25 30 35 40 VGS = 10 V ID = 25 A 1.4 6 4 2 1.2 1.0 0.8 0 0 20 40 60 80 100 0.6 −50 120 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 60 I S − Source Current (A) 20 On-Resistance vs. Junction Temperature 1.6 VDS = 20 V ID = 25 A 8 15 VDS − Drain-to-Source Voltage (V) Gate Charge 10 10 0.016 ID = 25 A 0.012 0.008 0.004 0.000 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72569 S-40577—Rev. B, 29-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7476DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 100 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 80 −0.0 −0.2 −0.4 60 40 −0.6 20 −0.8 −1.0 −50 −25 0 25 50 75 100 125 0 150 1 0.1 0.01 TJ − Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72569 S-40577—Rev. B, 29-Mar-04 Si7476DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72569 S-40577—Rev. B, 29-Mar-04 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5