BYW72 / 73 / 74 / 75 / 76 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics e2 949588 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Fast rectification and switching diode for example for TV-line output circuits and switch mode power supply Mechanical Data Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Parts Table Part Type differentiation Package BYW72 VR = 200 V; IFAV = 3 A SOD-64 BYW73 VR = 300 V; IFAV = 3 A SOD-64 BYW74 VR = 400 V; IFAV = 3 A SOD-64 BYW75 VR = 500 V; IFAV = 3 A SOD-64 BYW76 VR = 600 V; IFAV = 3 A SOD-64 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Test condition see electrical characteristics tp = 10 ms, half sinewave Part Symbol Value Unit BYW72 VR = VRRM 200 V BYW73 VR = VRRM 300 V BYW74 VR = VRRM 400 V BYW75 VR = VRRM 500 V BYW76 VR = VRRM 600 V IFSM 100 A Repetitive peak forward current IFRM 15 A Average forward current IFAV 3 A Tj = Tstg - 55 to + 175 °C ER 10 mJ Junction and storage temperature range Non repetitive reverse avalanche energy Document Number 86050 Rev. 1.6, 13-Apr-05 I(BR)R = 0.4 A www.vishay.com 1 BYW72 / 73 / 74 / 75 / 76 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 25 K/W on PC board with spacing 25 mm RthJA 70 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typ. Max Forward voltage Parameter IF = 3 A Test condition VF 0.95 1.1 V Reverse current VR = VRRM IR 1 5 µA VR = VRRM, Tj = 150 °C IR 60 150 µA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 200 ns Reverse recovery time Symbol Min Unit RthJA –Therm. Resist. Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 40 I FAV –Average Forward Current( A ) 3.5 30 l 20 l 10 TL= constant 0 0 5 10 15 20 25 2.5 2.0 1.5 1.0 RthJA = 70 K/W PCB: d = 25 mm 0.5 0.0 30 l – Lead Length ( mm ) 94 9548 VR = VRRM half sinewave RthJA = 45 K/W l = 10 mm 3.0 Figure 1. Max. Thermal Resistance vs. Lead Length 0 16356 20 40 60 80 100 120 140 160 180 Tamb – Ambient Temperature (°C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 100 Tj = 2 5°C 0.100 I 0.010 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 16355 V F – Forward Voltage ( V ) Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 I R – Reverse Current (A) Tj = 175 °C 1 F – Forward Current (A) V R = VRRM 10 100 10 1 25 16357 50 75 100 125 150 175 Tj – Junction Temperature (°C ) Figure 4. Reverse Current vs. Junction Temperature Document Number 86050 Rev. 1.6, 13-Apr-05 BYW72 / 73 / 74 / 75 / 76 Vishay Semiconductors PR – Reverse Power Dissipation ( mW ) 300 90 CD – Diode Capacitance ( pF ) V R = VRRM 250 200 PR–Limit @100 % VR 150 PR–Limit @80 % VR 100 50 70 60 50 40 30 20 10 0 25 16358 0 0.1 50 75 100 125 150 175 Tj – Junction Temperature (°C ) 1.0 10.0 V R – Reverse Voltage ( V ) 16359 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Z thp - Thermal Resistance f. Pulse Cond. (K/W f = 1 MHz 80 100.0 Figure 6. Diode Capacitance vs. Reverse Voltage 1000 V RRM = 600 V R thJA = 70 K/W 100 tp /T= 0.5 Tamb = 25°C tp /T= 0.2 10 70°C tp/T= 0.1 t p/T= 0.05 0.02 1 10 -4 100 °C 45°C tp/T= 0.01 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 I FRM - Repetitive Peak Forward Current ( A ) t p - Pulse Length ( s ) 94 9562 Figure 7. Thermal Response Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. Document Number 86050 Rev. 1.6, 13-Apr-05 4.0 (0.156) max. 26 (1.014) min. 94 9587 www.vishay.com 3 BYW72 / 73 / 74 / 75 / 76 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86050 Rev. 1.6, 13-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1