DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. • • • • • • • • • These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle up to ± 22 V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply voltages in the off condition. The DG201B is a normally closed switch and the DG202B is a normally open switch. (see Truth Table.) ± 22 V supply voltage rating TTL and CMOS compatible logic Low on-resistance - RDS(on): 45 Low leakage - ID(on): 20 pA Single supply operation possible Extended temperature range Fast switching - tON: 120 ns Low glitching - Q: 1 pC Compliant to RoHS Directive 2002/95/EC Pb-free Available RoHS* COMPLIANT BENEFITS • Wide analog signal range • • • • • Simple logic interface Higher accuracy Minimum transients Reduced power consumption Superior to DG201A, DG202 • Space savings (TSSOP) APPLICATIONS • Industrial instrumentation • • • • • Test equipment Communications systems Disk drives Computer peripherals Portable instruments • Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG201B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic 0 1 DG201B ON OFF DG202B OFF ON Logic “0” 0.8 V Logic “1” 2.4 V Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix ORDERING INFORMATION Temp. Range Package - 55 °C to 125 °C 16-pin CerDIP Part Number DG201BAK DG202BAK DG201BDJ DG201BDJ-E3 16-pin Plastic DIP DG202BDJ DG202BDJ-E3 DG201BDY DG201BDY-E3 DG201BDY-T1 DG201BDY-T1-E3 16-pin narrow SOIC DG202BDY DG202BDY-E3 DG202BDY-T1 DG202BDY-T1-E3 - 40 °C to 85 °C DG201BDQ DG201BDQ-E3 DG201BDQ-T1 DG201BDQ-T1-E3 16-pin TSSOP DG202BDQ DG202BDQ-E3 DG202BDQ-T1 DG202BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Voltages Referenced, V+ to VGND 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Current (Any terminal) 30 Peak Current S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature Power Dissipation (Package)b Unit 44 (AK, DK suffix) - 65 to 150 (DJ, DY, DQ suffix) - 65 to 125 16-pin plastic DIPc 470 16-pin narrow SOIC and TSSOPd 640 16-pin CerDIPe 900 LCC-20f 750 V mA °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. f. Derate 10 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix SCHEMATIC DIAGRAM (typical channel) V+ 5V Reg SX V- Level Shift/ Drive V+ INX DX GND V- Figure 1. SPECIFICATIONSa Parameter Analog Switch Symbol Analog Signal Rangee Drain-Source On-Resistance RDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG RDS(on) RDS(on Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VIN = 2.4 V, 0.8 Vf VD = ± 10 V, IS = 1 mA IS(off) VS = ± 14 V, VD = ± 14 V ID(off) VD = ± 14 V, VS = ± 14 V ID(on) VS = VD = ± 14 V A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Full Room Full Room Room Full Room Full Room Full Min.d Max.d Min.d Max.d Unit - 15 15 85 100 - 15 15 85 100 V 0.5 20 0.5 20 0.5 40 - 0.5 -5 - 0.5 -5 - 0.5 - 10 45 2 ± 0.01 ± 0.01 ± 0.02 - 0.5 - 20 - 0.5 - 20 - 0.5 - 40 0.5 5 0.5 5 0.5 10 nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL 2.4 2.4 0.8 Full -1 1 0.8 -1 1 Room 5 Room Full Room Full 120 300 300 VS = 2 V see switching time test circuit 65 200 200 CL = 1000 pF, Vg = 0 V Rg = 0 Room 1 CIN V µA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation Channel-to-Channel Crosstalk OIRR XTALK Room 5 Room 5 VD = VS = 0 V, f = 1 MHz Room 16 CL = 15 pF, RL = 50 VS = 1 VRMS, f = 100 kHz Room 90 Room 95 VS = 0 V, f = 1 MHz ns pC pF dB Power Supply Positive Supply Current I+ VIN = 0 or 5 V Negative Supply Current I- Power Supply Range for Continuous Operation VOP Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 Room Full Room Full 50 100 -1 -5 Full ± 4.5 50 100 -1 -5 ± 22 ± 4.5 ± 22 µA V www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix SPECIFICATIONS (for Single Supply)a Parameter Symbol Analog Switch VANALOG Analog Signal Rangee Drain-Source RDS(on) On-Resistance Dynamic Characteristics Turn-On Time tON Turn-Off Time Charge Injection tOFF Q Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Vf A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit 0 12 160 200 0 12 160 200 V Full Room Full 90 Room 120 300 300 Room 60 200 200 CL = 1 nF, Vgen = 6 V Rgen = 0 Room 4 VIN = 0 or 5 V Room Full Room Full -1 -5 Full + 4.5 VD = 3 V, 8 V, IS = 1 mA VS = 8 V see switching time test circuit ns pC Power Supply Positive Supply Current I+ Negative Supply Current I- Power Supply Range for Continuous Operation VOP 50 100 50 100 -1 -5 + 25 + 4.5 + 25 µA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 110 100 100 90 90 80 ±5V 80 70 70 R DS(on) (Ω) R DS(on) (Ω) V+ = 15 V V- = - 15 V ± 10 V 60 50 ± 15 V 40 60 125 °C 85 °C 50 40 25 °C 30 - 55 °C ± 20 V 30 20 20 10 10 - 20 - 16 - 12 -8 -4 0 4 8 12 16 0 - 15 20 - 10 -5 VD - Drain Voltage (V) 0 5 10 15 VD - Drain Voltage (V) RDS(on) vs. VD and Power Supply Voltages RDS(on) vs. VD and Temperature 2.5 250 225 V+ = 5 V 2 200 150 V TH (V) RDS(on) (Ω) 175 7V 125 10 V 100 1.5 1 12 V 15 V 75 0.5 50 25 0 0 0 2 4 6 8 10 12 14 4 16 6 8 10 12 14 16 18 20 VD - Drain Voltage (V) V+ Positive Supply (V) RDS(on) vs. VD and Single Power Supply Voltages Input Switching Threshold vs. Supply Voltage 1 nA 80 60 V+ = 15 V V- = - 15 V VS, V D = ± 14 V V+ = 22 V V- = - 22 V TA = 25 °C I S, I D - Current I S, I D - Current (pA) 40 20 0 - 20 IS(off), ID(off) 100 pA IS(off), ID(off) 10 pA ID(on) - 40 - 60 - 80 - 20 - 15 - 10 -5 0 5 10 15 Temperature (°C) Leakage Currents vs. Analog Voltage Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 20 1 pA - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Leakage Currents vs. Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 400 500 V- = 0 V 400 Switching Time (ns) Switching Time (ns) 300 300 200 ton 200 ton 100 toff 100 toff 0 0 2 4 6 8 10 12 14 16 18 0 20 ±4 ±8 ± 12 ± 16 ± 20 V+ - Positive Supply (V) V+, V- Positive and Negative Supplies (V) Switching Time vs. Single Supply Voltage Switching Time vs. Power Supply Voltage 120 30 V+ = 15 V V- = - 15 V 110 20 OIRR (dB) Q - Charge (pC) 100 10 V+ = 15 V V- = - 15 V 0 V+ = 12 V V- = 0 V 90 RL = 50 Ω 80 70 - 10 60 - 20 50 - 30 - 15 40 - 10 -5 0 5 10 10K 15 100K 1M VANALOG - Analog Voltage (V) f - Frequency (Hz) QS, QD - Charge Injection vs. Analog Voltage Off Isolation vs. Frequency 10M I+ - Supply Current (mA) 4 3 2 1 0 1K 10K 100K 1M f - Frequency (Hz) Supply Current vs. Switching Frequency www.vishay.com 6 Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix TEST CIRCUITS + 15 V V+ S VS = + 2 V D Logic Input VO IN tOFF V- GND tr < 20 ns tf < 20 ns 50 % 0V CL 35 pF RL 1 kΩ 3V 3V 90 % Switch Output VO tON - 15 V RL VO = V S RL + R DS(on) Figure 2. Switching Time + 15 V C + 15 V C V+ S1 VS V+ S VS D D1 Rg = 50 Ω VO 50 Ω IN1 Rg = 50 Ω 0 V, 2.4 V 0 V, 2.4 V RL IN S2 VO D2 NC GND V- C GND - 15 V Off Isolation = 20 log RL IN2 0 V, 2.4 V VS C = RF bypass VO XTALK Isolation = 20 log VS V- C - 15 V VO Figure 4. Channel-to-Channel Crosstalk Figure 3. Off Isolation + 15 V ΔVO Rg VO V+ S D IN Vg CL 1000 pF 3V GND VO INX ON OFF ON VΔVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x Δ VO - 15 V Figure 5. Charge Injection Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix APPLICATIONS + 15 V V+ Logic Input Low = Sample High = Hold 1 kΩ + 15 V + 15 V - 15 V - J202 LM101A VIN + 2N4400 5 MΩ 200 Ω 50 pF VOUT 5.1 MΩ 1000 pF DG201B V- J500 30 pF J507 - 15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 µs = 1 µs = 5 mV = 5 mV/s - 15 V Figure 6. Sample-and-Hold + 15 V 160 V1 C4 fC3 Select TTL Control 150 pF 120 C3 1500 pF Voltage Gain - dB fC4 Select C2 fC2 Select 0.015 µF fC1 Select 0.15 µF C1 80 fC1 fC2 fC3 fL1 0 V- DG201B fC4 40 fL2 fL3 fL4 GND - 40 1 - 15 V 10 100 1K 10K R3 = 1 MΩ + 15 V - 15 V R1 = 10 kΩ LM101A + R2 = 10 kΩ VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2πR3CX 1M Max. Attenuation = R DS(on) 10 kΩ R3 R1 = 100 (40 dB) 1 2πR1CX fL (Unity Gain Frequency) = 30 pF 100K f - Frequency (Hz) ≈ - 47 dB Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency www.vishay.com 8 Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG201B, DG202B Vishay Siliconix APPLICATIONS VIN1 +5V + 15 V 30 pF VL V+ + 15 V + LM101A VIN2 - + 15 V DG419 - 15 V RF1 18 kΩ RF1 9.9 kΩ RF1 100 kΩ RG1 2 kΩ RG2 100 Ω RG3 100 Ω DG202B CH V- GND - 15 V Gain = Gain 1 (x1) RF + RG Gain 2 (x10) RG Gain 3 (x100) Gain 4 (x1000) V- GND Logic High = Switch On Figure 8. A Precision Amplifier with Digitally Programable Input and Gains Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70037. Document Number: 70037 S11-0800-Rev. J, 25-Apr-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L1 L e1 C B B1 MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ eA INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 19.05 19.56 0.750 0.770 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC ∝ 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.38 1.14 0.015 0.045 0° 15° 0° 15° ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5403 Document Number: 71282 03-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1