Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V 2.5 800 1000 450 5 10 20 1.5 - V V A A W V A ns MIN. MAX. UNIT -65 - 1000 450 5 10 2 4 20 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 3.95 K/W 55 - K/W TYP. MAX. UNIT 1500 V - pF Ths ≤ 25 ˚C [INCLUDE] LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink August 1997 1 MIN. - - 12 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES PARAMETER Collector cut-off current IEBO VCEOsust VCEsat VBEsat hFE hFE CONDITIONS 1 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 2.5 A; IB = 0.5 A Base-emitter saturation voltage IC = 2.5 A; IB = 0.5 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 450 - 10 - mA V 10 10 18 20 1.5 1.3 35 35 V V TYP. MAX. UNIT - 1 4 0.8 µs µs µs 1.1 80 1.4 150 µs ns 1.2 140 1.5 300 µs ns DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ton ts tf Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = -IBoff = 0.5 A Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 300R 30-60 Hz 100 1R 0 6V VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). August 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. tf ts toff tp t IBon IB T t -IBoff Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon 90 % Normalised Derating % 120 110 90 % with heatsink compound 100 90 IC 80 70 10 % 60 ts ton tf IBon IB 30 20 10 10 % tr P tot 50 40 toff 0 30ns 0 -IBoff 20 40 60 80 Ths / C 100 120 140 Fig.7. Normalised power derating and second breakdown curves. Fig.4. Switching times waveforms with resistive load. VCC 6 IC / A BUT11AX 5 4 LC 3 IBon 2 LB T.U.T. 1 -VBB 0 0 VCE / V 800 1200 Fig.8. Reverse bias safe operating area. Tj ≤ Tj max Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH August 1997 400 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 h FE BUT11AF BUT11AX 100 IC / A 5V = 0.01 ICM max 1V 10 10 IC max tp = 10 us II 100 us (1) 1 0.01 1 0.1 1 IC / A 10 100 1 ms Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE 10 ms I 0.1 (2) 500 ms DC III 0.01 1 10 1000 100 VCE / V Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C (1) (2) I II III NB: August 1997 4 Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF Fig.11. Typical base-emitter and collector-emitter saturation voltages. VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5 Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. VCEsat = f(IB); parameter IC August 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF Fig.13. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T August 1997 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 2 3 0.9 0.7 M 0.55 max 2.54 1.3 5.08 top view Fig.15. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1997 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1997 8 Rev 1.000