SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 40 0.064 @ VGS = 6 V 38.7 Qg (Typ) APPLICATIONS D Industrial 95 TO-220AB D G G D S S Top View N-Channel MOSFET Ordering Information: SUP40N25-60—E3 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range Symbol Limit VDS 250 VGS "30 ID 23 70 IAR 35 PD V 40 IDM EAR Unit 61 300b 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 73132 S-42076—Rev. A, 15-Nov-04 www.vishay.com 1 SUP40N25-60 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 250 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "30 V "250 VDS = 250 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 250 V, VGS = 0 V, TJ = 125_C 50 VDS = 250 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea rDS(on) DS( ) gfs 4 70 V nA mA m A 0.049 0.060 VGS = 10 V, ID = 20 A, TJ = 125_C 0.121 VGS = 10 V, ID = 20 A, TJ = 175_C 0.163 VGS = 6 V, ID = 15 A, 0.051 VDS = 15 V, ID = 20 A 70 W 0.064 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 170 Total Gate Chargec Qg 95 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 5000 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 125 V,, VGS = 10 V,, ID = 45 A 300 pF 140 28 nC 34 f = 1 MHz 1.6 W td(on) 22 35 tr 220 330 40 60 145 220 td(off) VDD = 100 V, RL = 2.78 W ID ^ 45 A, VGEN = 10 V, Rg = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 45 Pulsed Current ISM 70 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 45 A, VGS = 0 V trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms A 1.0 1.5 V 150 225 ns 12 18 A 0.9 2 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73132 S-42076—Rev. A, 15-Nov-04 SUP40N25-60 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 6V 80 I D − Drain Current (A) I D − Drain Current (A) 80 60 40 5V 20 60 40 TC = 125_C 20 25_C 4V 0 −55_C 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 150 0.10 g fs − Transconductance (S) 120 r DS(on) − On-Resistance ( W ) TC = −55_C 25_C 90 125_C 60 30 0 0.08 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 50 60 0 20 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 4000 3000 2000 Crss 1000 80 100 Gate Charge 20 6000 5000 60 ID − Drain Current (A) Capacitance 7000 40 Coss 0 VDS = 125 V ID = 45 A 16 12 8 4 0 0 40 80 120 160 VDS − Drain-to-Source Voltage (V) Document Number: 73132 S-42076—Rev. A, 15-Nov-04 200 0 30 60 90 120 150 180 Qg − Total Gate Charge (nC) www.vishay.com 3 SUP40N25-60 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 VGS = 10 V ID = 20 A I S − Source Current (A) 2.4 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 2.0 1.6 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 −50 −25 0 25 50 75 100 125 150 1 0 175 0.3 TJ − Junction Temperature (_C) 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 100 0.6 300 290 V(BR)DSS (V) ID = 1.0 mA I Dav (a) 10 IAV (A) @ TA = 25_C 280 270 260 1 250 240 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 230 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 73132 S-42076—Rev. A, 15-Nov-04 SUP40N25-60 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 50 10 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 10 ms *Limited by rDS(on) 100 ms 1 ms 1 10 ms, 100 ms, dc 0.1 TC = 25_C Single Pulse 0.01 0 0.001 0 25 50 75 100 125 150 175 0.1 TC − Ambient Temperature (_C) 100 1 10 1000 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Safe Operating Area, Case Temperature Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73132. Document Number: 73132 S-42076—Rev. A, 15-Nov-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1