Si1023X New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers Very Small Footprint High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-563 SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: B Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C) _ a Pulsed Drain TA = 25_C TA = 85_C Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS TA = 25_C TA = 85_C PD V –390 –370 –280 –265 IDM Continuous Source Current (diode conduction)a Maximum Power Dissipationa ID Unit mA –650 –450 –380 280 250 145 130 mW TJ, Tstg –55 to 150 _C ESD 2000 V Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71169 S-03104—Rev. A, 08-Feb-01 www.vishay.com 1 Si1023X New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V "1 "2 mA VDS = –16 V, VGS = 0 V –0.3 –100 nA mA –5 VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V –700 mA VGS = –4.5 V, ID = –350 mA 0.8 1.2 VGS = –2.5 V, ID = –300 m A 1.2 1.6 VGS = –1.8 V, ID = –150 m A 1.8 2.7 gfs VDS = –10 V, ID = –250 mA 0.4 VSD IS = –150 mA, VGS = 0 V –0.8 rDS(on) Forward Transconductancea V W S –1.2 V Dynamicb Total Gate Charge Qg 1500 Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time tON Turn-Off Time tOFF VDS = –10 V, VGS = –4.5 V, ID = –250 mA pC 150 450 14 VDD = –10 V, RL = 47 W ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W ns 46 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics Transfer Characteristics 1.0 1000 VGS = 5 thru 3 V TJ = –55_C 2.5 V 0.6 2V 0.4 1.8 V 0.2 0.0 0.0 2 600 125_C 400 200 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com 25_C 800 I D – Drain Current (mA) I D – Drain Current (A) 0.8 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Document Number: 71169 S-03104—Rev. A, 08-Feb-01 Si1023X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 120 VGS = 0 V f = 1 MHz 100 3.2 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 4.0 VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 Crss 0.0 0 0 200 400 600 800 1000 0 4 ID – Drain Current (mA) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 250 mA r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 16 1.6 4 3 2 1 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 –50 1.6 –25 Qg – Total Gate Charge (nC) 0 25 50 75 100 125 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 1000 TJ = 125_C r DS(on) – On-Resistance ( W ) IS – Source Current (mA) 12 VDS – Drain-to-Source Voltage (V) 5 0 0.0 8 100 TJ = 25_C TJ = –55_C 10 1 0.0 4 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71169 S-03104—Rev. A, 08-Feb-01 1.2 1.4 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1023X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature 0.3 3.0 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) 0.2 –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 VGS = 4.5 V –25 0 TJ – Temperature (_C) 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =500_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71169 S-03104—Rev. A, 08-Feb-01