DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability ook, halfpage • Withstands full load mismatch 1 4 • Gold metallization ensures excellent reliability. d g DESCRIPTION MBB072 Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. 2 3 MSB057 The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information. s Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT123 PIN Product and environmental safety - toxic materials DESCRIPTION 1 drain 2 source 3 gate 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHZ) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) d3 (dB) class-A 28 50 800 8 (PEP) > 24 − < −40 class-AB 28 50 150 30 (PEP) typ. 24 typ. 40 (note 1) typ. −35 108 50 30 30 typ. 20 typ. 65 − MODE OF OPERATION CW, class-B Note 1. 2-tone efficiency. September 1992 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V ±VGS gate-source voltage − 20 V ID DC drain current − 4 A Ptot total power dissipation − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 68 W 2.6 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 68 W 0.3 K/W MGP063 MRA905 10 100 handbook, halfpage handbook, halfpage Ptot (W) ID (A) 80 (2) (1) 60 (2) 1 (1) 40 20 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 80 120 Th (°C) 160 (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. September 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage ID = 10 mA; VGS = 0 MIN. TYP. MAX. UNIT 110 − − V IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 100 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 10 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 1 A; VDS = 10 V 1.1 1.6 − S RDS(on) drain-source on-state resistance ID = 1 A; VGS = 10 V − 0.75 1.5 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 5.5 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 130 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 36 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 3.7 − pF MGP064 0 MGP065 6 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 4 −2 −3 2 −4 −5 10−2 10−1 0 ID (A) 0 1 5 VGS (V) 10 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. September 1992 Fig.5 4 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP066 1.5 MGP067 400 handbook, halfpage handbook, halfpage C (pF) RDS(on) (Ω) 300 1 200 Cis 0.5 100 Cos 0 0 50 100 Tj (°C) 0 150 0 10 ID = 1 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MGP068 150 handbook, halfpage Crs (pF) 100 50 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. September 1992 5 20 30 40 50 VDS (V) Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) f (MHz) VDS (V) IDQ (mA) GP (dB) d3 (dB) (note 1) d5 (dB) (note 1) RGS (Ω) 0 to 8 (PEP) 28 50 800 > 24 typ. 28 > −40 typ. −44 < −40 typ. −64 24 24 Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. MGP069 MGP070 40 0 handbook, halfpage handbook, halfpage Gp (dB) d3 (dB) 30 −20 20 −40 10 −60 −80 0 0 5 10 15 20 PL (W) PEP 0 5 10 15 20 PL (W) PEP Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Class-A operation; VDS = 50 V; IDQ = 0.8 A; RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25 °C. dotted line: Th = 70 °C. Fig.9 Fig.10 Third order intermodulation distortion as a function of load power, typical values. Power gain as a function of load power, typical values. September 1992 6 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP071 MGP072 −20 40 handbook, halfpage handbook, halfpage Gp (dB) d3 (dB) 30 −40 20 10 −60 0 0 10 20 30 f (MHz) 40 0 10 20 30 f (MHz) 40 Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. Fig.11 Power gain as a function of frequency, typical values. Fig.12 Third order intermodulation distortion as a function of frequency, typical values. C4 R2 handbook, full pagewidth C5 D.U.T. T1 50 Ω input L4 C9 C1 L2 R1 C6 C7 L1 R3 C3 L3 C8 +VG +VD MGP073 f = 28 MHz. Fig.13 Test circuit for class-A operation. September 1992 50 Ω output C2 7 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-A test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor (note 1) 39 pF C2 multilayer ceramic chip capacitor 3 × 10 nF 2222 852 47103 C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 C9 multilayer ceramic chip capacitor (note 1) 24 pF L1 4 turns enamelled 0.6 mm copper wire 86 nH length 3.3 mm; int. dia. 5 mm; leads 2 x 2 mm L2 36 turns enamelled 0.7 mm copper wire wound on a rod grade 4B1 Ferroxcube drain choke 20 µH length 30 mm; int. dia. 5 mm L3 grade 3B Ferroxcube wideband RF choke L4 8 turns enamelled 1 mm copper wire 189 nH R1 0.4 W metal film resistor 24 Ω R2 0.4 W metal film resistor 1500 Ω R3 0.4 W metal film resistor 10 Ω T1 4 : 1 transformer; 18 turns twisted pair of 0.25 mm copper wire with 10 twists per cm, wound on a grade 4C6 toroidal core 4330 030 30031 4312 020 36640 length 9.5 mm; int. dia. 5 mm; leads 2 x 3 mm dimensions 9 x 6 x 3 mm 4322 020 97171 Note 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. September 1992 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 100 handbook, full pagewidth mounting screw 90 strap strap L3 +VDD +VG C7 L1 C6 C8 R3 C3 L2 R1 T1 C5 L4 C2 C9 C1 R2 C4 MGP074 Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Fig.14 Component layout for 28 MHz class-A test circuit. September 1992 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) f (MHz) VDS (V) IDQ (mA) GP (dB) ηD (%) d3 (dB) (note 1) d5 (dB) (note 1) RGS (Ω) 30 (PEP) 28 50 150 typ. 24 typ. 40 (note 2) typ. −35 typ. −40 22 Notes 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. 2. 2-tone efficiency. Ruggedness in class-AB operation The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 50 V; f = 28 MHz. MGP076 MGP077 28 60 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 26 50 24 40 22 30 20 20 0 20 40 PL (W) PEP 60 0 20 40 PL (W) PEP 60 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.15 Power gain as a function of load power, typical values. Fig.16 Two tone efficiency as a function of load power, typical values. September 1992 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP078 MGP079 0 0 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) −20 −20 −40 −40 −60 0 20 40 PL (W) PEP −60 60 0 20 40 PL (W) PEP 60 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.17 Third order intermodulation distortion as a function of load power, typical values. Fig.18 Fifth order intermodulation distortion as a function of load power, typical values. C10 handbook, full pagewidth C1 C3 50 Ω output C2 L1 C4 ,, ,, D.U.T. L2 ,, L3 R1 50 Ω output C8 L4 C6 L6 +VG +VD C9 C12 MGP080 f = 28 MHz. Fig.19 Test circuit for class-AB operation. September 1992 C11 L5 R3 C5 R2 C7 11 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C10 multilayer ceramic chip capacitor (note 1) 62 pF C2, C4, C8, C11 film dielectric trimmer 5 to 60 pF C3 multilayer ceramic chip capacitor (note 1) 51 pF C5, C6, C9 multilayer ceramic chip capacitor 100 nF C7 multilayer ceramic chip capacitor (note 1) 10 pF C12 aluminium electrolytic capacitor 10 µF, 63 V L1 9 turns enamelled 1 mm copper wire 280 nH L2, L3 stripline (note 2) 30 Ω length 10 mm; width 6 mm L4 14 turns enamelled 1 mm copper wire 1650 nH length 20 mm; int. dia. 12 mm; leads 2 x 2 mm L5 10 turns enamelled 1 mm copper wire 380 nH length 13 mm; int. dia. 7 mm; leads 2 x 3 mm L6 grade 3B Ferroxcube wideband RF choke R1 0.4 W metal film resistor 22 Ω R2 0.4 W metal film resistor 1 MΩ R3 0.4 W metal film resistor 10 Ω CATALOGUE NO. 2222 809 07011 2222 852 47104 2222 030 28109 length 11 mm; int. dia. 6 mm; leads 2 x 4 mm 4312 020 36640 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5), thickness 1.6 mm. September 1992 12 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 150 handbook, full pagewidth mounting screw strap strap strap rivet 70 R3 C9 R2 L6 C6 C5 L1 C2 L4 R1 L5 L2 C1 C12 L3 C3 C10 C7 C8 C4 C11 MGP081 Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Dimensions in mm. Fig.20 Component layout for 28 MHz class-AB test circuit. September 1992 13 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP084 MGP083 30 50 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 20 40 ri 10 RL 30 0 20 xi −10 10 −20 XL 0 0 10 20 30 f (MHz) 40 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Fig.21 Input impedance as a function of frequency (series components), typical values. Fig.22 Load impedance as a function of frequency (series components), typical values. MGP085 30 handbook, halfpage Gp (dB) 20 10 0 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS = 22 Ω. Fig.23 Power gain as a function of frequency, typical values. September 1992 14 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) RGS (Ω) 108 50 30 30 typ. 20 typ. 65 10 MGP086 10 MGP087 50 ZL handbook, halfpage handbook, halfpage Zi (Ω) (Ω) 40 5 ri 30 XL 20 RL 0 10 xi −5 0 100 f (MHz) 0 200 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Fig.24 Input impedance as a function of frequency (series components), typical values. Fig.25 Load impedance as a function of frequency (series components), typical values. September 1992 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 MGP088 30 handbook, halfpage Gp (dB) 20 10 0 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS = 10 Ω. Fig.26 Power gain as a function of frequency, typical values. September 1992 16 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1992 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 17 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1992 18