Si7872DP New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8 0.022 @ VGS = 10 V 10 0.028 @ VGS = 4.5 V 8 FEATURES D LITTLE FOOT Plust Schottky D PWM Optimized D New Low Thermal Resistance PowerPAK package with low 1.07 mm profile APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 3.0 D1 PowerPAKt SO-8 S1 6.15 mm D2 5.15 mm 1 G1 2 S2 3 G2 Schottky Diode G1 4 G2 D1 8 D1 7 D2 6 D2 5 Bottom View S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C Channel-1 Steady State Channel-2 "20 "20 "12 "12 10 Continuous Source Current (Diode Conduction)a PD TA = 70_C V 5.1 A 30 IS TA = 25_C Unit 6.4 7 IDM Operating Junction and Storage Temperature Range Channel-2 30 ID TA = 70_C Pulsed Drain Current Maximum Power Dissipationa Channel-1 2.9 1.1 3.5 1.4 2.2 0.9 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS MOSFET Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady-State Steady-State RthJA RthJC Schottky Typical Maximum Typical Maximum 26 35 26 35 60 85 60 85 4.1 6.0 4.1 6.0 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 1 Si7872DP New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA m "100 Ch-2 "100 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 6.5 A Forward Transconductanceb Diode Forward Voltageb 2.0 Ch-1 IDSS ID(on) 3.0 0.8 VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V, TJ = 85_C _ On-State Drain Currentb 1.0 Ch-2 VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current Ch-1 gfs VDS = 15 V, ID = 7.5 A VSD IS = 1 A, VGS = 0 V Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA m mA 2000 Ch-1 20 Ch-2 20 A Ch-1 0.017 0.022 Ch-2 0.016 0.022 Ch-1 0.024 0.030 Ch-2 0.020 0.028 Ch-1 19 Ch-2 21 Ch-1 0.75 1.2 Ch-2 0.47 0.5 W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time RG td(on) tr Turn-Off Delay Time Fall Time VDS = 15 V, VGS = 4.5 V, ID = 7.5 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) tf Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms m Ch-1 7 11 Ch-2 11.5 18 Ch-1 2.9 Ch-2 3.8 Ch-1 2.5 Ch-2 3.5 Ch-1 1.5 Ch-2 1.8 nC W Ch-1 9 15 Ch-2 12 20 Ch-1 10 17 Ch-2 10 17 Ch-1 19 30 Ch-2 40 66 Ch-1 9 15 Ch-2 9 15 Ch-1 35 55 Ch-2 28 45 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = -30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−1 Output Characteristics 30 Transfer Characteristics 30 VGS = 10 thru 5 V 4V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 5 20 15 10 TC = 125_C 5 25_C 3V -55 _C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 5 Capacitance C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 4 1200 0.040 0.030 VGS = 4.5 V 0.020 VGS = 10 V Ciss 960 720 480 Coss 0.010 240 0.000 Crss 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) 8 6 4 2 1.6 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 15 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 VSD - Source-to-Drain Voltage (V) Threshold Voltage 8 10 Single Pulse Power, Junction-to-Ambient 0.4 100 0.2 80 ID = 250 mA -0.0 60 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) -0.2 40 -0.4 20 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 10- 3 150 10- 2 TJ - Temperature (_C) 10- 1 1 10 Time (sec) Safe Operating Area, Junction-to-Foot 100 rDS(on) Limited IDM Limited I D - Drain Current (A) 10 1 ms 10 ms 1 0.1 ID(on) Limited 1s 10 s dc BVDSS Limited 0.01 0.1 100 ms TC = 25_C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 5 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−2 Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 3V 15 10 20 15 10 TC = 125_C 5 5 0 0 0.0 25_C -55 _C 0 2 4 6 8 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2000 0.032 1600 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.5 3.0 3.5 4.0 Capacitance On-Resistance vs. Drain Current 0.040 0.024 2.0 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V VGS = 10 V 0.016 0.008 Ciss 1200 800 400 Coss Crss 0.000 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) Gate Charge 20 25 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 1.6 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 Qg - Total Gate Charge (nC) www.vishay.com 6 10 25 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C ID = 7.5 A 0.04 0.03 0.02 0.01 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 4 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 0.3 80 ID = 250 mA 0.1 60 Power (W) V GS(th) Variance (V) 0.2 -0.0 40 -0.1 -0.2 20 -0.3 -0.4 -50 -25 0 25 50 75 100 125 0 10- 3 150 10- 2 TJ - Temperature (_C) 10- 1 1 10 Time (sec) Safe Operating Area, Junction-to-Foot 100 rDS(on) Limited IDM Limited I D - Drain Current (A) 10 1 ms 10 ms 1 0.1 ID(on) Limited 1s 10 s dc BVDSS Limited 0.01 0.1 100 ms TC = 25_C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 7 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−2 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 www.vishay.com 8 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C I F - Forward Current (A) I R - Reverse Current (mA) SCHOTTKY 1 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 9